Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same

Patent metadata

Field	Value
Publication number	US-9570609-B2
Application number	US-201514729652-A
Country	US
Kind code	B2
Filing date	Jun 3, 2015
Priority date	Nov 1, 2013
Publication date	Feb 14, 2017
Grant date	Feb 14, 2017

Abstract

A field effect transistor includes a body layer having a strained crystalline semiconductor channel region, and a gate stack on the channel region. The gate stack includes a crystalline semiconductor gate layer that is lattice mismatched with the channel region, and a crystalline gate dielectric layer between the gate layer and the channel region. Related devices and fabrication methods are also discussed.

First claim

That which is claimed is:

1. A field effect transistor, comprising:
a nanosheet stack comprising a plurality of individually gated conduction channels, the individually gated conduction channels respectively comprising a crystalline semiconductor channel layer, a crystalline dielectric layer on the crystalline semiconductor channel layer, and a crystalline semiconductor gate layer on the crystalline dielectric layer opposite the crystalline semiconductor channel layer, wherein the nanosheet stack is strained from lattice mismatch between ones of the layers thereof,
wherein the crystalline semiconductor channel layer and the crystalline semiconductor gate layer comprise different Group IV semiconductor materials, and
wherein the crystalline dielectric layer is not configured to supply free charge carriers to the crystalline semiconductor channel layer.

2. A field effect transistor, comprising:
a body layer comprising a crystalline semiconductor channel region; and
a gate stack on the crystalline semiconductor channel region, the gate stack comprising a crystalline semiconductor gate layer that is lattice mismatched with the crystalline semiconductor channel region, and a crystalline gate dielectric layer between the crystalline semiconductor gate layer and the crystalline semiconductor channel region,
wherein the crystalline semiconductor channel region and the crystalline semiconductor gate layer comprise different Group IV semiconductor materials, and
wherein the crystalline gate dielectric layer is not configured to supply free charge carriers to the crystalline semiconductor channel region.

3. The field effect transistor of claim 2 , wherein an interface between the crystalline semiconductor channel region and the gate stack is free of amorphous materials.

4. The field effect transistor of claim 3 , wherein the crystalline gate dielectric layer comprises a high-k crystalline insulating layer directly on the channel region.

5. The field effect transistor of claim 4 , wherein the crystalline semiconductor gate layer is directly on the crystalline gate dielectric layer, and wherein the crystalline semiconductor channel region and the crystalline semiconductor gate layer comprise heteroepitaxial strained semiconductor layers.

6. The field effect transistor of claim 5 , wherein the crystalline semiconductor gate layer is heavily doped relative to the crystalline semiconductor channel region.

7. The field effect transistor of claim 6 , wherein one of the crystalline semiconductor channel region and the crystalline semiconductor gate layer comprises compressively strained silicon germanium (SiGe), and another of the crystalline semiconductor channel region and the crystalline semiconductor gate layer comprises tensile strained silicon (Si).

8. The field effect transistor of claim 5 , wherein the crystalline semiconductor gate layer comprises respective crystalline semiconductor gate layers on opposing surfaces of the crystalline semiconductor channel region, and wherein the crystalline gate dielectric layer comprises respective crystalline gate dielectric layers between the respective crystalline semiconductor gate layers and the opposing surfaces of the crystalline semiconductor channel region.

9. The field effect transistor of claim 8 , wherein a structure comprising the gate stack and the body layer is repeatedly stacked to define a plurality of individually-gated channel regions, and wherein strain in the individually-gated channel regions and the respective crystalline semiconductor gate layers is maintained throughout the structure.

10. The field effect transistor of claim 9 , wherein the respective crystalline semiconductor gate layers on the opposing surfaces of the crystalline semiconductor channel region comprise primary gate layers, and further comprising:
a secondary gate layer on sidewalls of the crystalline semiconductor channel region between the opposing surfaces thereof,
wherein the secondary gate layer comprises a metal or doped polycrystalline material.

11. The field effect transistor of claim 10 , wherein the plurality of individually-gated channel regions define a fin protruding from a substrate, and wherein the secondary gate layer extends on opposing sidewalls of the fin and on a surface therebetween.

12. The field effect transistor of claim 10 , further comprising:
amorphous insulating layers separating the sidewalls of the crystalline semiconductor channel region from the secondary gate layer,
wherein the secondary gate layer is conductively coupled to the primary gate layers.

13. The field effect transistor of claim 2 , further comprising:
source/drain regions on opposite ends of and conductively coupled to the crystalline semiconductor channel region adjacent the gate stack thereon; and
amorphous insulating layers separating opposing sidewalls of the crystalline semiconductor gate layer from the source/drain regions.

14. A field effect transistor, comprising:
a nanosheet stack comprising a plurality of individually gated conduction channels, the individually gated conduction channels respectively comprising a crystalline semiconductor channel layer, a crystalline dielectric layer on the crystalline semiconductor channel layer, and a crystalline semiconductor gate layer on the crystalline dielectric layer opposite the crystalline semiconductor channel layer, wherein the nanosheet stack is strained from lattice mismatch between ones of the layers thereof and has a width of greater than about 30 nanometers but less than about 100 nanometers,
wherein one of the crystalline semiconductor channel layer and the crystalline semiconductor gate layer comprises compressively strained silicon germanium (SiGe), and another of the crystalline semiconductor channel layer and the crystalline semiconductor gate layer comprises tensile strained silicon (Si), and
wherein the crystalline dielectric layer is not configured to supply free charge carriers to the crystalline semiconductor channel layer.

15. The field effect transistor of claim 14 , wherein the crystalline semiconductor channel layer, the crystalline dielectric layer, and the crystalline semiconductor gate layer comprise heteroepitaxial layers.

16. The field effect transistor of claim 14 , wherein the field effect transistor is an n-type device, and wherein the crystalline semiconductor channel layer comprises silicon (Si).

17. The field effect transistor of claim 14 , wherein the field effect transistor is a p-type device, and wherein the crystalline semiconductor channel layer comprises silicon germanium (SiGe).

18. The field effect transistor of claim 14 , wherein the crystalline dielectric layer comprises calcium fluoride (CaF 2 ), zinc sulfide (ZnS), praseodymium oxide (Pr 2 O 3 ), and/or gadolinium oxide (Gd 2 O 3 ).

19. The field effect transistor of claim 14 , wherein the field effect transistor is an n-type device, and wherein the crystalline semiconductor gate layer comprises doped silicon germanium (SiGe).

20. The field effect transistor of claim 14 , wherein the field effect transistor is a p-type device, and wherein the crystalline semiconductor gate layer comprises doped silicon (Si).

Assignees

• Obradovic Borna J
• Bowen Robert C
• Rodder Mark S
• Samsung Electronics Co Ltd

Inventors

• Obradovic Borna J
• Bowen Robert C
• Rodder Mark S

Classifications

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• H01L29/78681

  Electricity · mapped topic

• H01L29/7845 Primary

  Electricity · mapped topic

• H01L29/0673

  Electricity · mapped topic

• H01L29/20

  Electricity · mapped topic