Structure and method to achieve large strain in NS without addition of stack-generated defects
US-10283638-B2 · May 7, 2019 · US
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Bowen Robert C patents
Bowen Robert C holds 9 patents in our database, with recent filings and technology areas summarized below.
| Metric | Value |
|---|---|
| Total patents | 9 |
| Recent patents | 0 |
| First publication | Apr 7, 2015 |
| Latest publication | May 7, 2019 |
Filing trend
Year-over-year patent counts for this assignee.
Recent patents
Latest publications where this party is an assignee.
FinFET devices including recessed source/drain regions having optimized depths
US-10147793-B2 · Dec 4, 2018 · US
Multi-layer fin field effect transistor devices and methods of forming the same
US-9793403-B2 · Oct 17, 2017 · US
FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same
US-9716176-B2 · Jul 25, 2017 · US
Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same
US-9570609-B2 · Feb 14, 2017 · US
Notable patents
Representative or frequently cited publications from precomputed assignee stats.
Structure and method to achieve large strain in NS without addition of stack-generated defects
US-10283638-B2 · May 7, 2019 · US
FinFET devices including recessed source/drain regions having optimized depths
US-10147793-B2 · Dec 4, 2018 · US
Multi-layer fin field effect transistor devices and methods of forming the same
US-9793403-B2 · Oct 17, 2017 · US
FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same
US-9716176-B2 · Jul 25, 2017 · US
Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same
US-9570609-B2 · Feb 14, 2017 · US
Technology areas
Mapped technology topics for this assignee.
| Technology | Patents |
|---|---|
| Electricity | 9 |
| Operations & Transport | 2 |