Back-end-of-line 2D memory cell
US-12575111-B2 · Mar 10, 2026 · US
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Shivaraman Shriram patents
Shivaraman Shriram is listed as an inventor on 141 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Shivaraman Shriram |
| Total patents | 141 |
| First publication | Feb 21, 2019 |
| Latest publication | Mar 10, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Device, method and system for providing (anti)ferroelectric capacitors of various thicknesses
US-2025379140-A1 · Dec 11, 2025 · US
Stacked 2D CMOS with inter metal layers
US-12396254-B2 · Aug 19, 2025 · US
Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabrication
US-12396217-B2 · Aug 19, 2025 · US
Transistor structures with a metal oxide contact buffer and a method of fabricating the transistor structures
US-12349416-B2 · Jul 1, 2025 · US
Contact gating for 2D field effect transistors
US-12349438-B2 · Jul 1, 2025 · US
Gate dielectrics for complementary metal oxide semiconductors transistors and methods of fabrication
US-12310101-B2 · May 20, 2025 · US
TMD inverted nanowire integration
US-12278289-B2 · Apr 15, 2025 · US
Angled etch to enable tin removal from selected sidewalls
US-12266729-B2 · Apr 1, 2025 · US
Transistors with monocrystalline metal chalcogenide channel materials
US-12266720-B2 · Apr 1, 2025 · US
Recent patents
Latest publications not already listed above.
Dual gate control for trench shaped thin film transistors
US-12191395-B2 · Jan 7, 2025 · US
Self-aligned memory cell with replacement metal gate vertical access transistor and stacked 3d capacitors
US-2025008740-A1 · Jan 2, 2025 · US
Self-aligned contacts for thin film transistors
US-12183831-B2 · Dec 31, 2024 · US
Transition metal dichalcogenide nanowires and methods of fabrication
US-12176388-B2 · Dec 24, 2024 · US
Field-effect transistor (FET) with self-aligned ferroelectric capacitor and methods of fabrication
US-12166122-B2 · Dec 10, 2024 · US
Ferroelectric capacitors and methods of fabrication
US-2024373644-A1 · Nov 7, 2024 · US
Transition metal dichalcogenide (TMD) layer stack for transistor applications and methods of fabrication
US-12125895-B2 · Oct 22, 2024 · US
Multi-layer crystalline back gated thin film transistor
US-12119409-B2 · Oct 15, 2024 · US
Ferroelectric capacitors and methods of fabrication
US-12048165-B2 · Jul 23, 2024 · US
Multi-dielectric gate stack for crystalline thin film transistors
US-12009433-B2 · Jun 11, 2024 · US
Tmd inverted nanowire integration
US-2024186416-A1 · Jun 6, 2024 · US
Thin film transistors with spacer controlled gate length
US-11997847-B2 · May 28, 2024 · US
Memory cells with ferroelectric capacitors separate from transistor gate stacks
US-11980037-B2 · May 7, 2024 · US
Selective ferroelectric deployment for single-transistor, multiple-capacitor devices
US-2024112714-A1 · Apr 4, 2024 · US
Improved replacement electrode process for 3d ferroelectric memory
US-2024114696-A1 · Apr 4, 2024 · US
High endurance super-lattice anti-ferroelectric capacitors
US-2024114695-A1 · Apr 4, 2024 · US
Ferroelectric capacitor within backside interconnect
US-2024114694-A1 · Apr 4, 2024 · US
Technologies for transistors with a thin-film ferroelectric
US-2024113220-A1 · Apr 4, 2024 · US
Capacitor structure embedded within source or drain region
US-2024113101-A1 · Apr 4, 2024 · US
Gain cell using planar and trench ferroelectric and anti-ferroelectric capacitors for edram
US-2024114697-A1 · Apr 4, 2024 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 134 |
| Shivaraman Shriram | 7 |
| Le Van H | 7 |
| Kavalieros Jack T | 7 |
| Ghani Tahir | 7 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/6755 | 64 |
| H10D99/00 | 64 |
| H10D30/6757 | 62 |
| H01L29/78696 | 40 |
| H01L29/66969 | 37 |