Ferroelectric capacitors and methods of fabrication

Patent metadata

Field	Value
Publication number	US-12048165-B2
Application number	US-202016914140-A
Country	US
Kind code	B2
Filing date	Jun 26, 2020
Priority date	Jun 26, 2020
Publication date	Jul 23, 2024
Grant date	Jul 23, 2024

Abstract

An integrated circuit capacitor structure, includes a first electrode includes a cylindrical column, a ferroelectric layer around an exterior sidewall of the cylindrical column and a plurality of outer electrodes. The plurality of outer electrodes include a first outer electrode laterally adjacent to a first portion of an exterior of the ferroelectric layer and a second outer electrode laterally adjacent to a second portion of the exterior of the ferroelectric layer, wherein the second outer electrode is above the first outer electrode.

First claim

What is claimed is:

1. An integrated circuit capacitor structure, comprising:
a first electrode comprising a cylindrical column;
a ferroelectric layer around an exterior sidewall of the cylindrical column; and
a plurality of outer electrodes, comprising:
a first outer electrode laterally adjacent to a first portion of an exterior of the ferroelectric layer; and
a second outer electrode laterally adjacent to a second portion of the exterior of the ferroelectric layer, wherein the second outer electrode is above the first outer electrode, and wherein the first outer electrode extends laterally beyond an end of the second outer electrode;

a first dielectric layer adjacent to the ferroelectric layer and vertically between the first outer electrode and the second outer electrode;
a second dielectric layer over the second outer electrode;
a first contact extending through the first dielectric layer, wherein the first contact is laterally beyond the end of the second outer electrode and is in contact with the first outer electrode; and
a second contact extending through the second dielectric layer and in contact with the second outer electrode, wherein the second contact is laterally between the first electrode and the first contact.

2. The integrated circuit capacitor structure of claim 1 , wherein the ferroelectric layer has a thickness between 2 nm and 50 nm, and wherein the ferroelectric layer comprises oxygen and one or more of Pb, Zr, Hf, Sr, Ba or Ti.

3. The integrated circuit capacitor structure of claim 1 , wherein the second outer electrode is vertically spaced apart from the first outer electrode by a distance of at least 5 nm.

4. The integrated circuit capacitor structure of claim 3 , wherein the second dielectric layer is adjacent to the end of the second outer electrode and over the first dielectric layer, and wherein the first contact also extends through the second dielectric layer.

5. The integrated circuit capacitor structure of claim 4 , wherein the second dielectric layer is in contact with a portion of the first dielectric layer beyond the end of the second outer electrode.

6. The integrated circuit capacitor structure of claim 4 , wherein the second dielectric layer extends over the first electrode.

7. The integrated circuit capacitor structure of claim 6 , wherein a top surface of the first contact is coplanar with a top surface of the second contact, and coplanar with a top surface of the second dielectric layer.

8. The integrated circuit capacitor structure of claim 7 , further comprising a third dielectric layer under the ferroelectric layer and under the first outer electrode.

9. The integrated circuit capacitor structure of claim 8 , further comprising a conductive interconnect, under, and in contact with a bottom of the first electrode.

10. The integrated circuit capacitor structure of claim 9 , wherein:
the capacitor structure further comprises a liner layer between the ferroelectric layer and the first electrode;
the first electrode comprises a first metal;
the liner layer comprises a second metal;
the first electrode is in contact with the conductive interconnect; and
the liner layer is spaced apart from the third dielectric layer by the ferroelectric layer.

11. The integrated circuit capacitor structure of claim 1 , wherein the ferroelectric layer around an exterior sidewall of the cylindrical column comprises a first vertical thickness, wherein a combined vertical thickness of first outer electrode and the second outer electrode comprises a second vertical thickness, and wherein the second vertical thickness is between 90% and 95% of the first vertical thickness.

12. The integrated circuit capacitor structure of claim 1 , wherein the first dielectric layer extends laterally beyond the end of the second outer electrode.

13. The integrated circuit capacitor structure of claim 1 , wherein a top surface of the first contact is coplanar with a top surface of the second contact.

14. The integrated circuit capacitor structure of claim 1 , further comprising a liner layer between the ferroelectric layer and the first electrode, wherein the first electrode comprises a first metal and the liner layer comprises a second metal, and wherein the liner layer has a thickness between 2 nm and 10 nm.

15. The integrated circuit capacitor structure of claim 14 , wherein the first metal comprises titanium, tantalum, tungsten, or ruthenium.

16. The integrated circuit capacitor structure of claim 15 , wherein the second metal comprises ruthenium, tungsten, titanium, or tantalum.

Assignees

• Intel Corp

Inventors

• Haratipour Nazila
• Chang Sou-Chi
• Shivaraman Shriram
• Tung I-Cheng
• Brown-Heft Tobias
• Merrill Devin R
• Lin Che-Yun
• Sung Seung Hoon
• Kavalieros Jack
• Avci Uygar
• Metz Matthew V

Classifications

• H10D84/212

  of only capacitors · CPC title

• H10D1/694 Primary

  comprising noble metals or noble metal oxides · CPC title

• H10D1/682

  having dielectrics comprising perovskite structures · CPC title

• H10B53/10

  characterised by the top-view layout · CPC title

• H01G4/008

  Selection of materials · CPC title