Trench gate trench field plate vertical mosfet
US-2024304719-A1 · Sep 12, 2024 · US
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Mathur Guru patents
Mathur Guru is listed as an inventor on 50 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Mathur Guru |
| Total patents | 50 |
| First publication | Jan 22, 2015 |
| Latest publication | Sep 12, 2024 |
Notable patents
Publications ranked by popularity score, then publication date.
Trench gate trench field plate vertical MOSFET
US-12034074-B2 · Jul 9, 2024 · US
Laterally diffused metal oxide semiconductor with gate poly contact within source window
US-11721738-B2 · Aug 8, 2023 · US
Trench gate trench field plate vertical mosfet
US-2022052195-A1 · Feb 17, 2022 · US
Trench gate trench field plate vertical MOSFET
US-11189721-B2 · Nov 30, 2021 · US
Laterally Diffused Metal Oxide Semiconductor with Gate Poly Contact within Source Window
US-2021193809-A1 · Jun 24, 2021 · US
Laterally diffused metal oxide semiconductor with gate poly contact within source window
US-10957774-B2 · Mar 23, 2021 · US
Transistor having double isolation with one floating isolation
US-10937905-B2 · Mar 2, 2021 · US
Trench gate trench field plate vertical mosfet
US-2020381552-A1 · Dec 3, 2020 · US
Trench gate trench field plate vertical mosfet
US-10811530-B2 · Oct 20, 2020 · US
Recent patents
Latest publications not already listed above.
Analog capacitor on submicron pitch metal level
US-10608075-B2 · Mar 31, 2020 · US
Dual deep trenches for high voltage isolation
US-10580775-B2 · Mar 3, 2020 · US
Structures to avoid floating resurf layer in high voltage lateral devices
US-10319809-B2 · Jun 11, 2019 · US
Analog capacitor on submicron pitch metal level
US-2019157379-A1 · May 23, 2019 · US
Analog capacitor on submicron pitch metal level
US-10177215-B1 · Jan 8, 2019 · US
Laterally Diffused Metal Oxide Semiconductor with Gate Poly Contact within Source Window
US-2019006514-A1 · Jan 3, 2019 · US
Sinker with a reduced width
US-10163678-B2 · Dec 25, 2018 · US
Capacitor with improved voltage coefficients
US-10157915-B1 · Dec 18, 2018 · US
Laterally diffused metal oxide semiconductor with gate poly contact within source window
US-10103258-B2 · Oct 16, 2018 · US
Trench gate trench field plate vertical MOSFET
US-10062777-B2 · Aug 28, 2018 · US
Laterally Diffused Metal Oxide Semiconductor with Gate Poly Contact within Source Window
US-2018190814-A1 · Jul 5, 2018 · US
Structures to avoid floating resurf layer in high voltage lateral devices
US-2018108729-A1 · Apr 19, 2018 · US
Dual deep trenches for high voltage isolation
US-2018053765-A1 · Feb 22, 2018 · US
Structures to avoid floating RESURF layer in high voltage lateral devices
US-9876071-B2 · Jan 23, 2018 · US
Trench gate trench field plate vertical mosfet
US-2017373184-A1 · Dec 28, 2017 · US
Dual deep trenches for high voltage isolation
US-9786665-B1 · Oct 10, 2017 · US
Trench gate trench field plate vertical mosfet
US-2017222040-A1 · Aug 3, 2017 · US
Trench gate trench field plate vertical MOSFET
US-9660021-B1 · May 23, 2017 · US
Trench gate trench field plate vertical mosfet
US-2017125513-A1 · May 4, 2017 · US
Semiconductor structure with a doped region between two deep trench isolation structures
US-9608105-B2 · Mar 28, 2017 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Texas Instruments Inc | 50 |
| Hu Binghua | 1 |
| Pendharkar Sameer | 1 |
| Mathur Guru | 1 |
| Tamura Takehito | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D64/516 | 35 |
| H10D62/393 | 29 |
| H10D62/127 | 29 |
| H01L29/1095 | 27 |
| H10D84/038 | 26 |