Insulating gate separation structure for transistor devices
US-10879073-B2 · Dec 29, 2020 · US
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Labonte Andre patents
Labonte Andre is listed as an inventor on 37 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Labonte Andre |
| Total patents | 37 |
| First publication | Oct 1, 2015 |
| Latest publication | Dec 29, 2020 |
Notable patents
Publications ranked by popularity score, then publication date.
Self-aligned buried contact for vertical field-effect transistor and method of production thereof
US-10770585-B2 · Sep 8, 2020 · US
Insulating gate separation structure for transistor devices
US-2020135473-A1 · Apr 30, 2020 · US
Self-aligned buried contact for vertical field-effect transistor and method of production thereof
US-2020098913-A1 · Mar 26, 2020 · US
Gate cut method after source/drain metallization
US-10566201-B1 · Feb 18, 2020 · US
Contacting source and drain of a transistor device
US-10468300-B2 · Nov 5, 2019 · US
Middle of the line (MOL) contacts with two-dimensional self-alignment
US-10283408-B2 · May 7, 2019 · US
Air-gap gate sidewall spacer and method
US-10249728-B2 · Apr 2, 2019 · US
Gate contact structure positioned above an active region of a transistor device
US-10243053-B1 · Mar 26, 2019 · US
Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistor
US-10211100-B2 · Feb 19, 2019 · US
Recent patents
Latest publications not already listed above.
Contacting source and drain of a transistor device
US-2019013241-A1 · Jan 10, 2019 · US
Methods of forming an air gap adjacent a gate of a transistor and a gate contact above the active region of the transistor
US-2018277430-A1 · Sep 27, 2018 · US
Air-gap gate sidewall spacer and method
US-2018240883-A1 · Aug 23, 2018 · US
Air-gap gate sidewall spacer and method
US-2018204927-A1 · Jul 19, 2018 · US
Air-gap gate sidewall spacer and method
US-10026824-B1 · Jul 17, 2018 · US
Method and apparatus for placing a gate contact inside a semiconductor active region having high-k dielectric gate caps
US-10014215-B2 · Jul 3, 2018 · US
Middle of the line (mol) contacts with two-dimensional self-alignment
US-2018182668-A1 · Jun 28, 2018 · US
Method and apparatus for placing a gate contact inside an active region of a semiconductor
US-9941278-B2 · Apr 10, 2018 · US
Middle of the line (MOL) contacts with two-dimensional self-alignment
US-9929048-B1 · Mar 27, 2018 · US
Method and apparatus for placing a gate contact inside an active region of a semiconductor
US-2018012887-A1 · Jan 11, 2018 · US
Method and apparatus for placing a gate contact inside a semiconductor active region having high-k dielectric gate caps
US-2018012798-A1 · Jan 11, 2018 · US
Method and apparatus for placing a gate contact inside a semiconductor active region having high-k dielectric gate caps
US-9824921-B1 · Nov 21, 2017 · US
Methods of forming a gate contact above an active region of a semiconductor device
US-9780178-B2 · Oct 3, 2017 · US
Three-dimensional semiconductor transistor with gate contact in active region
US-9691897-B2 · Jun 27, 2017 · US
Three-dimensional semiconductor transistor with gate contact in active region
US-2017092764-A1 · Mar 30, 2017 · US
Methods of forming a gate contact above an active region of a semiconductor device
US-2016359009-A1 · Dec 8, 2016 · US
Methods of forming self-aligned contact structures on semiconductor devices and the resulting devices
US-9502286-B2 · Nov 22, 2016 · US
Gate contact structure having gate contact layer
US-2016336399-A1 · Nov 17, 2016 · US
Gate contact structure having gate contact layer
US-9490317-B1 · Nov 8, 2016 · US
Gate and source/drain contact structures for a semiconductor device
US-9478662-B2 · Oct 25, 2016 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Globalfoundries Inc | 37 |
| IBM | 2 |
| Global Foundries Inc | 1 |
| Globalfoudries Inc | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10W20/069 | 35 |
| H10D84/038 | 24 |
| H10D30/62 | 20 |
| H10D84/0158 | 20 |
| H10D30/6219 | 19 |