Magnetic heads having low magnetic coercivity (Hc) and high saturated magnetic flux density (Bs) in ferromagnetic (FM) layer(s) or shield(s) with minimized saturation
US-12567438-B2 · Mar 3, 2026 · US
This page is not indexed by search engines while we improve data quality.
Gribelyuk Michael A patents
Gribelyuk Michael A is listed as an inventor on 29 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Gribelyuk Michael A |
| Total patents | 29 |
| First publication | Jul 6, 2017 |
| Latest publication | Mar 3, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Nitrogen Doped Oxides For Lower Bandgap
US-2026058046-A1 · Feb 26, 2026 · US
Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM Devices
US-2025366376-A1 · Nov 27, 2025 · US
Nitrogen doped oxides for lower bandgap
US-12482588-B2 · Nov 25, 2025 · US
Buffer layers and interlayers that promote BiSbx (012) alloy orientation for sot and MRAM devices
US-12408560-B2 · Sep 2, 2025 · US
YPtBi 1:1:1 Composition Design Using Krypton Sputtering in Deposition Systems
US-2025266198-A1 · Aug 21, 2025 · US
Buffer Layers to Grow BiSb and YPtBi to Match the Crystal Symmetry of Interlayers and Ferromagnetic layers to Generate Spin-Polarized Current
US-2025255195-A1 · Aug 7, 2025 · US
Shunt Reducing Migration Barrier Layer Materials and Insertion Techniques for Epitaxial Topological Materials
US-2025252971-A1 · Aug 7, 2025 · US
RuAl and MgTiO Lamination For Effective Buffer and Interlayers For Topological Material Layers
US-2025246353-A1 · Jul 31, 2025 · US
Dopants to Increase BiSbX Bandgap for Optimal CPP Conductivity
US-2025248317-A1 · Jul 31, 2025 · US
Recent patents
Latest publications not already listed above.
Nitrogen Doped Oxides for Lower Bandgap
US-2025226140-A1 · Jul 10, 2025 · US
Dopants to Decrease BiSbX's and YBiPt's Bandgap for Optimal Current-In-Plane (CIP) Conductivity
US-2025228140-A1 · Jul 10, 2025 · US
Magnetic Heads Having Low Magnetic Coercivity (HC) And High Saturated Magnetic Flux Density (BS) In Ferromagnetic (FM) Layer(s) Or Shield(s) With Minimized Saturation
US-2025218457-A1 · Jul 3, 2025 · US
Magnetic Heads Having Low Magnetic Coercivity (Hc) and High Saturated Magnetic Flux Density (Bs) in Ferromagnetic (FM) Layer(s) or Shield(s) With Minimized Saturation
US-2025218456-A1 · Jul 3, 2025 · US
Highly Textured 001 BiSb And Materials for Making Same
US-2025054671-A1 · Feb 13, 2025 · US
Doping Process To Refine Grain Size For Smoother BiSb Film Surface
US-2025014618-A1 · Jan 9, 2025 · US
Highly textured 001 BiSb and materials for making same
US-12176132-B2 · Dec 24, 2024 · US
Film and Method for BiSbX (012) Texture for SOT Devices
US-2024412759-A1 · Dec 12, 2024 · US
Doping process to refine grain size for smoother BiSb film surface
US-12125512-B2 · Oct 22, 2024 · US
Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices
US-12106791-B2 · Oct 1, 2024 · US
Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler Alloys for SOT Based Sensor, Memory, and Storage Devices
US-2024032437-A1 · Jan 25, 2024 · US
SOT reader using BiSb topological insulator
US-11875827-B2 · Jan 16, 2024 · US
Highly Textured 001 BiSb And Materials for Making Same
US-2024006109-A1 · Jan 4, 2024 · US
Doped BiSb (012) or Undoped BiSb (001) Topological Insulator with GeNiFe Buffer Layer and/or Interlayer for SOT Based Sensor, Memory, and Storage Devices
US-2024005973-A1 · Jan 4, 2024 · US
Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM Devices
US-2023386721-A1 · Nov 30, 2023 · US
SOT Reader Using BiSb Topological Insulator
US-2023306993-A1 · Sep 28, 2023 · US
Doping Process To Refine Grain Size For Smoother BiSb Film Surface
US-2023197132-A1 · Jun 22, 2023 · US
NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTURE
US-2017271471-A1 · Sep 21, 2017 · US
NiPt AND Ti INTERSECTING SILICIDE PROCESS AND STRUCTURE
US-2017194454-A1 · Jul 6, 2017 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Western Digital Tech Inc | 27 |
| Tokyo Inst Tech | 2 |
| IBM | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| G11B5/3909 | 21 |
| H10N50/10 | 21 |
| H10N50/85 | 19 |
| G11B2005/0024 | 14 |
| H10N52/80 | 12 |