YPtBi 1:1:1 Composition Design Using Krypton Sputtering in Deposition Systems

Patent metadata

Field	Value
Publication number	US-2025266198-A1
Application number	US-202519011206-A
Country	US
Kind code	A1
Filing date	Jan 6, 2025
Priority date	Feb 16, 2024
Publication date	Aug 21, 2025
Grant date	—

Abstract

The present disclosure generally relates to topological semi-metal (TSM) based spin-orbit torque (SOT) devices, and methods of forming a TSM layer. The TSM layer of the SOT device comprises YPtBi having a 1:1:1 stoichiometry. The YPtBi has a density between about 9.7 g/cc to about 11.2 g/cc. Kr, Ar, or Xe gas is used to sputter the YPtBi to form the YPtBi layer or film. Trace amounts of Kr, Ar, or Xe are detectable in the YPtBi layer, where the YPtBi layer comprises about 1% of Kr, Ar, or Xe. One or more targets comprising YPtBi; YPt and Bi; PtBi and Y; Y, Pt, and Bi; or YBi and Pt can be used when forming the YPtBi layer. In embodiments where two targets are used to form the YPtBi layer, different amounts of power may be applied to each target.

First claim

What is claimed is:

1 . A spin-orbit torque (SOT) device, comprising:
a YPtBi layer having a 1:1:1 stoichiometry, the YPtBi layer having a density between about 9.7 g/cc to about 11.2 g/cc.

2 . The SOT device of claim 1 , wherein the YPtBi layer comprises about 0.1 at. % to about 2.5 at. % of Kr, Ar, or Xe.

3 . The SOT device of claim 1 , wherein the YPtBi layer has a (100), (111), or (110) orientation.

4 . The SOT device of claim 1 , further comprising a buffer layer disposed adjacent to the YPtBi layer.

5 . The SOT device of claim 4 , wherein the buffer layer comprises a material selected from the group consisting of:
X-Al, where X is one or more of Co, Ni, Ru, Rh, and Ir; Cr or CrX alloys, where X is one or more of Mo, Mn, Ti, Ru, and W; and RuAl, W-X, or Ta-X alloys with MgO and TiO, where X is one or more of Ta, Hf, W, V, Ti, Nb and Mo.

6 . The SOT device of claim 4 , wherein the buffer layer comprises a material selected from the group consisting of:
RuHf; Zr-X alloys, where X is one or more of Co, Cu, Ru, and Rh; Ti-Y alloys, where Y is one or more of Au, Ru, and Rh; B2 ternary A(BxC1-x) alloys; B2 binary alloys; CoZrX, where X is one or more of Ti, Fe, Ni, Nb, and Mo; two or more elements selected from the group consisting of: Ta, Hf, W, Ir, Pt, Y, Zr, Nb, Mo, Mg, Sc, Ti, V, Cr, Fe, Co, Ni, Cu, Ru, Rh, and Ag; oxides of Ti, Mg, Ni, Zn, or Zr; X-N or X-C composites, where X is one or more of Sc, Ti, V, Cr, Zr, Nb, Ta, Hf, and W; and MO 2 materials, where M is one or more of Ti, Cr, Ru, Rh, Sn, Sb, Ir, CrNb, CrV, and WV.

7 . A magnetic recording head comprising the SOT device of claim 1 .

8 . A magnetic recording device comprising the magnetic recording head of claim 7 .

9 . A magnetoresistive memory comprising the SOT device of claim 1 .

10 . A method of forming a YPtBi film having a 1:1:1 stoichiometry, the method comprising:
loading a substrate onto a chuck heated to a temperature of about 300° C. to about 600° C. in a deposition chamber; placing a YPt target and a Bi target in the deposition chamber; adjusting a Kr, Ar, or Xe gas flow, pressure, and substrate bias of the deposition chamber; and applying power and Kr, Ar, or Xe gas to sputter the YPt target and the Bi target to form a film comprising YPtBi film having a 1:1:1 stoichiometry and a density between about 9.7 g/cc to about 11.2 g/cc.

11 . The method of claim 10 , wherein a first power is applied to sputter the YPt target and a second power is applied to sputter the Bi target.

12 . The method of claim 11 , wherein the first power is greater than the second power.

13 . The method of claim 11 , wherein the second power is about 20% to about 30% of the first power.

14 . The method of claim 10 , wherein the Kr, Ar, or Xe gas flow is about 20 sccm to about 50 sccm.

15 . A spin-orbit torque (SOT) device comprising the YPtBi film having a 1:1:1 stoichiometry formed from the method of claim 10 .

16 . A method of forming a YPtBi film having a 1:1:1 stoichiometry, the method comprising:
loading a substrate onto a chuck heated to a temperature of about 300° C. to about 600° C. in a deposition chamber; placing one of the following target combinations in the deposition chamber:
a YBi target and a Pt target;
a PtBi target and a Y target; or
a Y target, a Pt target, and a Bi target;
adjusting a Kr, Ar, or Xe gas flow, pressure, and substrate bias of the deposition chamber; and applying power and Kr, Ar, or Xe gas to sputter the YBi target and the Pt target to form a film comprising YPtBi film having a 1:1:1 stoichiometry and a density between about 9.7 g/cc to about 11.2 g/cc.

17 . The method of claim 16 , wherein the pressure is about 0.2 mtorr to about 20 mtorr.

18 . The method of claim 16 , wherein the substrate bias is about 25 V to about 75 V.

19 . The method of claim 16 , wherein the Kr, Ar, or Xe gas flow is about 20 sccm to about 50 sccm.

20 . A spin-orbit torque (SOT) device comprising the YPtBi film having a 1:1:1 stoichiometry formed from the method of claim 16 .

Assignees

• Western Digital Tech Inc

Inventors

• Le Quang
• York Brian R
• Hwang Cherngye
• Gribelyuk Michael A
• Takano Hisashi

Classifications

• G11B5/3909

  Arrangements using a magnetic tunnel junction · CPC title

• G11B2005/0024

  Microwave assisted recording · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title

• H10N50/01

  Manufacture or treatment · CPC title