SOT Reader Using BiSb Topological Insulator

Patent metadata

Field	Value
Publication number	US-2023306993-A1
Application number	US-202217705147-A
Country	US
Kind code	A1
Filing date	Mar 25, 2022
Priority date	Mar 25, 2022
Publication date	Sep 28, 2023
Grant date	—

Abstract

The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.

First claim

1 . A spin-orbit torque (SOT) device, comprising:
a first non-magnetic layer; a first free layer disposed in contact with the first non-magnetic layer; and a first bismuth antimony (BiSb) layer disposed over the first free layer, wherein the first BiSb layer and the first free layer have collective thickness between about 5 nm to about 20 nm.

2 . The SOT device of claim 1 , wherein the first BiSb layer and the first free layer have collective thickness less than or equal to about 17 nm.

3 . The SOT device of claim 1 , wherein the first non-magnetic layer has a thickness less than or equal to about 2 nm.

4 . The SOT device of claim 1 , wherein the first free layer comprises Co, CoFeB, NiFe, or CoFe.

5 . The SOT device of claim 1 , wherein the first non-magnetic layer comprises Pt, Ru, Ta, MgO, or a combination thereof.

6 . The SOT device of claim 1 , further comprising an interlayer disposed between the first free layer and the first BiSb layer, wherein the first BiSb layer, the interlayer, and the first free layer have collective thickness less than or equal to about 20 nm.

7 . The SOT device of claim 1 , further comprising:
a second non-magnetic layer disposed in contact with the first non-magnetic layer; a second free layer disposed in contact with the second non-magnetic layer; and a second bismuth antimony (BiSb) layer disposed over the second free layer, wherein the second BiSb layer and the second free layer have collective thickness between about 5 nm to about 20 nm.

8 . A magnetic recording head comprising a write head and a read head, the read head comprising the SOT device of claim 1 .

9 . A magnetic recording device comprising the magnetic recording head of claim 8 .

10 . A magnetic recording head comprising a write head and a read head, the write head comprising the SOT device of claim 1 .

11 . A magnetic recording device comprising the magnetic recording head of claim 10 .

12 . A magneto-resistive memory comprising the SOT device of claim 1 .

13 . A spin-orbit torque (SOT) device, comprising:
a shield comprising a magnetic material; a non-magnetic layer having a thickness between about 0.5 nm to about 5 nm disposed on the shield; a free layer disposed in contact with the non-magnetic layer; and a bismuth antimony (BiSb) layer having a (012) orientation disposed over the free layer.

14 . The SOT device of claim 13 , wherein the BiSb layer and the free layer have collective thickness less than or equal to about 20 nm.

15 . The SOT device of claim 13 , further comprising:
an interlayer disposed between the free layer and the BiSb layer, wherein the BiSb layer, the interlayer, and the free layer have collective thickness less than or equal to about 20 nm; and a cap layer disposed over the BiSb layer.

16 . The SOT device of claim 13 , wherein the BiSb layer has a thickness between about 5 nm to about 10 nm.

17 . The SOT device of claim 13 , wherein the free layer comprises Co, CoFeB, NiFe, or CoFe, and wherein the non-magnetic layer comprises Pt, Ru, Ta, MgO, or a combination thereof.

18 . A magnetic recording head comprising a write head and a read head, the read head comprising the SOT device of claim 13 .

19 . A magnetic recording device comprising the magnetic recording head of claim 18 .

20 . A magnetic recording head comprising a write head and a read head, the write head comprising the SOT device of claim 13 .

21 . A magnetic recording device comprising the magnetic recording head of claim 20 .

22 . A magneto-resistive memory comprising the SOT device of claim 13 .

23 . A spin-orbit torque (SOT) device, comprising:
a substrate comprising a magnetic material; a non-magnetic layer having a thickness between about 0.5 nm to about 5 nm disposed on the substrate, wherein the non-magnetic layer comprises Pt, Ru, Ta, MgO, or a combination thereof; a free layer disposed in contact with the non-magnetic layer, the free layer comprising Co, CoFeB, NiFe, or CoFe; an interlayer disposed in contact with the free layer; and a bismuth antimony (BiSb) layer disposed in contact with the interlayer, wherein the BiSb layer, the interlayer, and the free layer have collective thickness less than or equal to about 17 nm.

24 . The SOT device of claim 23 , wherein the non-magnetic layer comprises a first sublayer comprising Ta disposed in contact with the substrate and a second sublayer comprising Pt disposed in contact with the first sublayer and the interlayer.

25 . The SOT device of claim 23 , further comprising a seed layer disposed on the BiSb layer.

26 . The SOT device of claim 23 , wherein the BiSb layer has a (012) orientation.

27 . A magnetic recording head comprising a write head and a read head, the read head comprising the SOT device of claim 23 .

28 . A magnetic recording device comprising the magnetic recording head of claim 27 .

29 . A magnetic recording head comprising a write head and a read head, the write head comprising the SOT device of claim 29 .

30 . A magnetic recording device comprising the magnetic recording head of claim 29 .

31 . A magneto-resistive memory comprising the SOT device of claim 23 .

Assignees

• Western Digital Tech Inc
• Tokyo Inst Tech

Inventors

• Le Quang
• York Brian R
• Liu Xiaoyong
• Le Son T
• Hwang Cherngye
• Gribelyuk Michael A
• Xu Xiaoyu
• Ho Kuok San
• Takano Hisashi
• Sasaki Julian
• Ho Huy H
• Nguyen Khang H D
• Pham Nam Hai

Classifications

• G11B5/39 Primary

  using magneto-resistive devices {or effects} · CPC title

• G11B2005/3996

  large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices · CPC title

• G11B2005/0021

  Thermally assisted recording using an auxiliary energy source for heating the recording layer locally to assist the magnetization reversal · CPC title