Magnetic Memory Device Based on Perpendicular Exchange Bias and Method of Manufacturing Magnetic Memory Device
US-2024032443-A1 · Jan 25, 2024 · US
Constructional details
Constructional details · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10N52/80 |
| Official title | Constructional details |
| Display label | Constructional details |
| Total patents | 1,246 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 37 |
| 2016 | 54 |
| 2017 | 82 |
| 2018 | 101 |
| 2019 | 142 |
| 2020 | 154 |
| 2021 | 137 |
| 2022 | 150 |
| 2023 | 165 |
| 2024 | 107 |
| 2025 | 95 |
| 2026 | 22 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Magnetic sensor and method of manufacturing the same
US-9523745-B2 · Dec 20, 2016 · US
Magnetic field measuring device
US-2016363637-A1 · Dec 15, 2016 · US
Method for Manufacturing the Magnetic Field Sensor Module
US-2016351800-A1 · Dec 1, 2016 · US
Magnetic memory device
US-9508925-B2 · Nov 29, 2016 · US
Half select method and structure for gating rashba or spin hall MRAM
US-9490297-B1 · Nov 8, 2016 · US
Magnetic field current sensors
US-9476915-B2 · Oct 25, 2016 · US
Magnetic sensor and method of manufacturing the same
US-2016254441-A1 · Sep 1, 2016 · US
Magnetoresistive sensor module on the planar surface
US-9423472-B2 · Aug 23, 2016 · US
Fabricating two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer
US-9406872-B1 · Aug 2, 2016 · US
Method For Making Current Sensors
US-2016218276-A1 · Jul 28, 2016 · US
Nanomagnetic devices switched with a spin hall effect
US-9391262-B1 · Jul 12, 2016 · US
Electrically gated three-terminal circuits and devices based on spin hall torque effects in magnetic nanostructures apparatus, methods and applications
US-2016196860-A1 · Jul 7, 2016 · US
Vertical hall effect sensor
US-2016190433-A1 · Jun 30, 2016 · US
Vertical hall effect sensor with offset reduction using depletion regions
US-9362485-B2 · Jun 7, 2016 · US
Durable miniature gas composition detector having fast response time
US-2016111635-A1 · Apr 21, 2016 · US
Three 3-contact vertical hall sensor elements connected in a ring and related devices, systems, and methods
US-2016097826-A1 · Apr 7, 2016 · US
Thermoelectric conversion element and method for manufacturing the same
US-9306153-B2 · Apr 5, 2016 · US
Semiconductor component comprising magnetic field sensor
US-2016064451-A1 · Mar 3, 2016 · US
Vertical hall device with highly conductive opposite face node for electrically connecting first and second hall effect regions
US-9252354-B2 · Feb 2, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10N52/80?
- CPC H10N52/80 is the Cooperative Patent Classification code for “Constructional details.”
- How many patents are filed under CPC H10N52/80 (Constructional details)?
- Our database includes 1,246 publications tagged with this CPC code.
- Is patent activity under CPC H10N52/80 growing?
- Publication counts under this code: 107 in 2024 vs 95 in 2025 (latest complete years).