Shunt Reducing Migration Barrier Layer Materials and Insertion Techniques for Epitaxial Topological Materials

Patent metadata

Field	Value
Publication number	US-2025252971-A1
Application number	US-202519041235-A
Country	US
Kind code	A1
Filing date	Jan 30, 2025
Priority date	Feb 1, 2024
Publication date	Aug 7, 2025
Grant date	—

Abstract

The present disclosure generally relates to topological insulator (TI) based or topological semi-metal (TSM) based spin-orbit torque (SOT) devices. The SOT device comprises a buffer layer, a first migration barrier layer, a TI or TSM layer, a second migration barrier layer, an interlayer, a ferromagnetic layer, and a capping layer. The TI or TSM layer is disposed in contact with the first and second migration barrier layers. The SOT device can also comprise a buffer layer, a ferromagnetic layer, an interlayer, a first migration barrier layer, a TI or TSM layer, a second migration barrier layer, and a capping layer. The TI or TSM layer is disposed in contact with the first and second migration barrier layers.

First claim

What is claimed is:

1 . A spin-orbit torque (SOT) device, comprising:
a first migration barrier layer; a topological insulator (TI) or topological semi-metal (TSM) layer disposed on the first migration barrier layer; a second migration barrier layer disposed on the TI or TSM layer, wherein the first and second migration barrier layers each individually comprising one or more materials selected from a first group, a second group, or a third group, wherein:
the first group comprises:
RuHf;
Zr—X alloys, where X is one or more of Co, Cu, Ru, and Rh;
Ti—Y alloys, where Y is one or more of Au, Ru, and Rh;
stoichiometric B2 ternary A (BxC1-x) alloys; and
alloys comprising multiple elements selected from the group consisting of: Ta, Hf, W, Ir, Pt, Y, Zr, Nb, Mo, Mg, Sc, Ti, V, Cr, Fe, Co, Ni, Cu, Ru, Rh, and Ag;

the second group comprises:
oxides of Ti, Mg, Ni, Zn, or Zr; and
X—N or X—C composites where X is one or more of Sc, Ti, V, Cr, Zr, Nb, Ta, Hf, and W; and

the third group comprises:
tetragonal oxides with a-axis lattice parameters in a range of 4.35 Å to 4.75 Å and c-axis in the range of 2.85 Å to 3.19 Å;
MO 2 , where M is Ti, Cr, Ru, Rh, Sn, Sb, or Ir; and
CrNb, CrV, and WV alloys;

an interlayer disposed on the second migration barrier layer; and a ferromagnetic (FM) layer disposed on the interlayer.

2 . The SOT device of claim 1 , wherein the first and second migration barrier layers are each individually doped with a material of the TI or TSM layer.

3 . The SOT device of claim 1 , wherein the TI or TSM layer comprises YPtBi having a (100) orientation or BiSb having a (012) orientation, and wherein the first and second migration barrier layers each individually comprise one or more materials selected from the first group or the third group.

4 . The SOT device of claim 1 , wherein the TI or TSM layer comprises YPtBi having a (110) orientation, and wherein the first and second migration barrier layers each individually comprise one or more materials selected from the second group or the third group.

5 . The SOT device of claim 1 , wherein the TI or TSM layer comprises YPtBi (100), or YPtBi (110), or BiSb having a (012) orientation.

6 . The SOT device of claim 5 , wherein the first and second migration barrier layers each individually comprise one or more materials selected from the third group.

7 . The SOT device of claim 1 , further comprising a buffer layer, wherein the first migration barrier layer is disposed on the buffer layer.

8 . A magnetic recording head comprising the SOT device of claim 1 .

9 . A magnetic recording device comprising the magnetic recording head of claim 8 .

10 . A magneto-resistive memory comprising the SOT device of claim 1 .

11 . A spin-orbit torque (SOT) device, comprising:
a ferromagnetic (FM) layer; an interlayer comprising a sub-interlayer disposed on the FM layer, and a first migration barrier layer disposed on the sub-interlayer; a topological insulator (TI) or topological semi-metal (TSM) layer disposed on the first migration barrier layer; and a second migration barrier layer disposed on the TI or TSM layer, the first and second migration barrier layers each individually comprising one or more materials selected from a first group, a second group, or a third group, wherein:
the first group comprises:
RuHf;
Zr—X alloys, where X is one or more of Co, Cu, Ru, and Rh;
Ti—Y alloys, where Y is one or more of Au, Ru, and Rh;
stoichiometric B2 ternary A (BxC1-x) alloys; and
alloys comprising multiple elements selected from the group consisting of: Ta, Hf, W, Ir, Pt, Y, Zr, Nb, Mo, Mg, Sc, Ti, V, Cr, Fe, Co, Ni, Cu, Ru, Rh, and Ag;

the second group comprises:
oxides of Ti, Mg, Ni, Zn, or Zr; and
X—N or X—C composites where X is one or more of Sc, Ti, V, Cr, Zr, Nb, Ta, Hf, and W; and

the third group comprises:
tetragonal oxides with a-axis lattice parameters in a range of 4.35 Å to 4.75 Å and c-axis in the range of 2.85 Å to 3.19 Å;
MO 2 , where M is Ti, Cr, Ru, Rh, Sn, Sb, or Ir; and
CrNb, CrV, and WV alloys.

12 . The SOT device of claim 11 , wherein the TI or TSM layer comprises YPtBi having a (100) orientation or BiSb having a (012) orientation, and wherein the first and second migration barrier layers each individually comprise one or more materials selected from the first group or the third group.

13 . The SOT device of claim 11 , wherein the TI or TSM layer comprises YPtBi having a (110) orientation, and wherein the first and second migration barrier layers each individually comprise one or more materials selected from the second group or the third group.

14 . The SOT device of claim 11 , wherein the first and second migration barrier layers each individually has a thickness of about 4 Å to about 20 Å.

15 . The SOT device of claim 11 , wherein the sub-interlayer has a (100) orientation, a (110) orientation, or a (012) orientation, and wherein the (100) orientation, a (110) orientation, or a (012) orientation of the sub-interlayer transfers through the first migration barrier layer to the TI or TSM layer.

16 . The SOT device of claim 11 , further comprising a buffer layer disposed on the TI or TSM layer.

17 . A magnetic recording head comprising the SOT device of claim 11 .

18 . A magnetic recording device comprising the magnetic recording head of claim 17 .

19 . A magneto-resistive memory comprising the SOT device of claim 11 .

20 . A spin-orbit torque (SOT) device, comprising:
a first migration barrier layer; a topological insulator (TI) or topological semi-metal (TSM) layer disposed in contact with the first migration barrier layer, the TI layer comprising YPtBi having a (100) orientation, YPtBi having a (110) orientation, or BiSb having a (012) orientation; a second migration barrier layer disposed in contact with the TI or TSM layer, the first and second migration barrier layers each individually comprising one or more materials selected from a first group, a second group, or a third group, wherein:
the first group comprises:
RuHf;
Zr—X alloys, where X is one or more of Co, Cu, Ru, and Rh;
Ti—Y alloys, where Y is one or more of Au, Ru, and Rh;
stoichiometric B2 ternary A (BxC1-x) alloys; and
alloys comprising multiple elements selected from the group consisting of: Ta, Hf, W, Ir, Pt, Y, Zr, Nb, Mo, Mg, Sc, Ti, V, Cr, Fe, Co, Ni, Cu, Ru, Rh, and Ag;

the second group comprises:
oxides of Ti, Mg, Ni, Zn, or Zr; and
X—N or X—C composites where X is one or more of Sc, Ti, V, Cr, Zr, Nb, Ta, Hf, and W; and

the third group comprises:
tetragonal oxides with a-axis lattice parameters in a range of 4.35 Å to 4.75 Å and c-axis in the range of 2.85 Å to 3.19 Å;
MO 2 , where M is Ti, Cr, Ru, Rh, Sn, Sb, or Ir; and
CrNb, CrV, and WV alloys; and

a ferromagnetic (FM) layer.

21 . The SOT device of claim 20 , further comprising a buffer layer and an interlayer, wherein the first migration barrier layer is disposed on the buffer layer, the interlayer is disposed on the second migration barrier layer, and the FM layer is disposed on the interlayer.

22 . The SOT device of claim 20 , further comprising a buffer layer and an interlayer, wherein the interlayer is disposed on the FM layer, the first migration barrier layer is disposed on the interlayer, and the buffer layer is disposed on the second migration barrier layer.

23 . The SOT device of claim 20 , wherein the first and second migration barrier layer

Assignees

• Western Digital Tech Inc

Inventors

• Le Quang
• York Brian R
• Hwang Cherngye
• Liu Xiaoyong
• Gribelyuk Michael A
• Takano Hisashi

Classifications

• H10N50/80

  Constructional details · CPC title

• G11C11/18

  using Hall-effect devices · CPC title

• G11B2005/0024

  Microwave assisted recording · CPC title

• G11C11/161

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title