Highly Textured 001 BiSb And Materials for Making Same

Patent metadata

Field	Value
Publication number	US-2024006109-A1
Application number	US-202217855045-A
Country	US
Kind code	A1
Filing date	Jun 30, 2022
Priority date	Jun 30, 2022
Publication date	Jan 4, 2024
Grant date	—

Abstract

The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.

First claim

What is claimed is:

1 . A method of forming a spin-orbit torque (SOT) device, the method comprising:
depositing an amorphous material on a substrate, the amorphous material being selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof; exposing the amorphous material to air to form an amorphous material oxide surface on the amorphous material; and depositing a first BiSb layer on the amorphous material oxide surface, the first BiSb layer having a (001) orientation.

2 . The method of claim 1 , wherein the amorphous material oxide surface has a thickness of about 5 Å to about 15 Å.

3 . The method of claim 1 , further comprising:
depositing an interlayer on the first BiSb layer; depositing a first ferromagnetic layer on the interlayer; and depositing a cap layer on the first ferromagnetic layer.

4 . The method of claim 3 , further comprising:
depositing a second ferromagnetic layer over the cap layer; and depositing a second BiSb layer over the second ferromagnetic layer, the second BiSb layer having a (012) orientation.

5 . A magnetic recording head comprising the SOT device formed by the method of claim 1 .

6 . A magnetic recording device comprising the magnetic recording head of claim 5 .

7 . A magneto-resistive memory comprising the SOT device formed by the method of claim 1 .

8 . A magnetic sensor comprising the SOT device formed by the method of claim 1 .

9 . A spin-orbit torque (SOT) device, comprising:
a first spin Hall effect layer comprising BiSb having a (012) orientation; a first free layer disposed over the first spin Hall effect layer; a second free layer disposed over the first free layer; and a second spin Hall effect layer disposed over the second free layer, the second spin Hall effect layer comprising BiSb having a (001) orientation.

10 . The SOT device of claim 9 , further comprising:
a first interlayer disposed in contact with the first spin Hall effect layer; and a second interlayer disposed in contact with the second spin Hall effect layer, the second interlayer comprising an amorphous oxide material, wherein the first interlayer and the second interlayer comprise different materials.

11 . The SOT device of claim 10 , wherein the amorphous oxide material comprises an amorphous material selected from the group consisting of: B, AI, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof.

12 . The SOT device of claim 10 , wherein the first interlayer comprising SiN, NiFeGe, Ru, RuAl, or Pt.

13 . The SOT device of claim 10 , wherein the second interlayer has a thickness of about 5 Å to about 15 Å.

14 . The SOT device of claim 9 , wherein the first spin Hall effect layer has a greater width than the first free layer and the second free layer.

15 . The SOT device of claim 9 , further comprising a gap layer disposed between the first free layer and the second free layer.

16 . A magnetic recording head comprising the SOT device of claim 9 .

17 . A magnetic recording device comprising the magnetic recording head of claim 16 .

18 . A magnetic sensor comprising the SOT device of claim 9 .

19 . A spin-orbit torque (SOT) device, comprising:
a first shield; a first interlayer disposed on the first shield; a first spin Hall effect layer disposed on the first interlayer, the first spin Hall effect layer comprising BiSb having a (012) orientation; a first free layer disposed over the first spin Hall effect layer; a gap layer disposed on the first free layer; a second free layer disposed over the gap layer; a second interlayer disposed over the second free layer, the second interlayer comprising an amorphous oxide material, wherein the first interlayer and the second interlayer comprise different materials; a second spin Hall effect layer disposed on the second interlayer, the second spin Hall effect layer comprising BiSb having a (001) orientation; and a second shield disposed over the second spin Hall effect layer.

20 . The SOT device of claim 19 , wherein the second interlayer has a thickness of about 5 Å to about 15 Å.

21 . The SOT device of claim 19 , wherein the amorphous oxide material comprises an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof.

22 . The SOT device of claim 19 , wherein the first interlayer comprises SiN, NiFeGe, Ru, RuAl, or Pt.

23 . The SOT device of claim 19 , wherein the first spin Hall effect layer has a greater width than the second first spin Hall effect.

24 . The SOT device of claim 19 , wherein the first spin Hall effect layer and the second spin Hall effect layer have a same width.

25 . A magnetic recording device comprising the SOT device of claim 19 .

26 . A magnetic sensor comprising the SOT device of claim 19 .

27 . A spin-orbit torque (SOT) device, comprising:
a substrate; an amorphous material oxide layer disposed over the substrate; a spin Hall effect layer disposed in contact with the amorphous material oxide layer, the spin Hall effect layer comprising BiSb having a (001) orientation; and a free layer disposed over the spin Hall effect layer.

28 . The SOT device of claim 27 , wherein the amorphous material oxide layer comprises an oxidized form of an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof.

29 . A magnetic sensor comprising the SOT device of claim 27 .

30 . A magneto-resistive memory comprising the SOT device of claim 27 .

31 . A magnetic recording head comprising the SOT device of claim 27 .

32 . A magnetic recording device comprising the magnetic recording head of claim 31 .

Assignees

• Western Digital Tech Inc

Inventors

• Le Quang
• York Brian R
• Hwang Cherngye
• Liu Xiaoyong
• Gribelyuk Michael A
• Xu Xiaoyu
• Simmons Randy G
• Ho Kuok San
• Takano Hisashi

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H01F10/324 Primary

  Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer · CPC title

• C30B29/52

  Alloys · CPC title

• C23C8/12

  using elemental oxygen or ozone · CPC title

• H01L27/222

  Electricity · mapped topic