Highly textured 001 BiSb and materials for making same

Patent metadata

Field	Value
Publication number	US-12176132-B2
Application number	US-202217855045-A
Country	US
Kind code	B2
Filing date	Jun 30, 2022
Priority date	Jun 30, 2022
Publication date	Dec 24, 2024
Grant date	Dec 24, 2024

Abstract

The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.

First claim

What is claimed is:

1. A spin-orbit torque (SOT) device, comprising:
a first spin Hall effect layer comprising BiSb having a (012) orientation;
a first free layer disposed over the first spin Hall effect layer;
a second free layer disposed over the first free layer; and
a second spin Hall effect layer disposed over the second free layer, the second spin Hall effect layer comprising BiSb having a (001) orientation.

2. The SOT device of claim 1 , further comprising:
a first interlayer disposed in contact with the first spin Hall effect layer; and
a second interlayer disposed in contact with the second spin Hall effect layer, the second interlayer comprising an amorphous oxide material, wherein the first interlayer and the second interlayer comprise different materials.

3. The SOT device of claim 2 , wherein the amorphous oxide material comprises an amorphous material selected from the group consisting of: B, AI, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AIN, C, Ge, and combinations thereof.

4. The SOT device of claim 2 , wherein the first interlayer comprising SiN, NiFeGe, Ru, RuAl, or Pt.

5. The SOT device of claim 2 , wherein the second interlayer has a thickness of about 5 Å to about 15 Å.

6. The SOT device of claim 1 , wherein the first spin Hall effect layer has a greater width than the first free layer and the second free layer.

7. The SOT device of claim 1 , further comprising a gap layer disposed between the first free layer and the second free layer.

8. A magnetic recording head comprising the SOT device of claim 1 .

9. A magnetic recording device comprising the magnetic recording head of claim 8 .

10. A magnetic sensor comprising the SOT device of claim 1 .

11. A spin-orbit torque (SOT) device, comprising:
a first shield;
a first interlayer disposed on the first shield;
a first spin Hall effect layer disposed on the first interlayer, the first spin Hall effect layer comprising BiSb having a (012) orientation;
a first free layer disposed over the first spin Hall effect layer;
a gap layer disposed on the first free layer;
a second free layer disposed over the gap layer;
a second interlayer disposed over the second free layer, the second interlayer comprising an amorphous oxide material, wherein the first interlayer and the second interlayer comprise different materials;
a second spin Hall effect layer disposed on the second interlayer, the second spin Hall effect layer comprising BiSb having a (001) orientation; and
a second shield disposed over the second spin Hall effect layer.

12. The SOT device of claim 11 , wherein the second interlayer has a thickness of about 5 Å to about 15 Å.

13. The SOT device of claim 11 , wherein the amorphous oxide material comprises an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AIN, C, Ge, and combinations thereof.

14. The SOT device of claim 11 , wherein the first interlayer comprises SiN, NiFeGe, Ru, RuAl, or Pt.

15. The SOT device of claim 11 , wherein the first spin Hall effect layer has a greater width than the second first spin Hall effect.

16. The SOT device of claim 11 , wherein the first spin Hall effect layer and the second spin Hall effect layer have a same width.

17. A magnetic recording device comprising the SOT device of claim 11 .

18. A magnetic sensor comprising the SOT device of claim 11 .

19. A spin-orbit torque (SOT) device, comprising:
a substrate;
an amorphous material oxide layer disposed over the substrate;
a spin Hall effect layer disposed in contact with the amorphous material oxide layer, the spin Hall effect layer comprising BiSb having a (001) orientation; and
a free layer disposed over the spin Hall effect layer.

20. The SOT device of claim 19 , wherein the amorphous material oxide layer comprises an oxidized form of an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AIN, C, Ge, and combinations thereof.

21. A magnetic sensor comprising the SOT device of claim 19 .

22. A magneto-resistive memory comprising the SOT device of claim 19 .

23. A magnetic recording head comprising the SOT device of claim 19 .

24. A magnetic recording device comprising the magnetic recording head of claim 23 .

Assignees

• Western Digital Tech Inc

Inventors

• Le Quang
• York Brian R
• Hwang Cherngye
• Liu Xiaoyong
• Gribelyuk Michael A
• Xu Xiaoyu
• Simmons Randy G
• Ho Kuok San
• Takano Hisashi

Classifications

• H10N52/80

  Constructional details · CPC title

• H10N52/01

  Manufacture or treatment · CPC title

• H10N52/00

  Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00) · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title