Highly Textured 001 BiSb And Materials for Making Same

Patent metadata

Field	Value
Publication number	US-2025054671-A1
Application number	US-202418933330-A
Country	US
Kind code	A1
Filing date	Oct 31, 2024
Priority date	Jun 30, 2022
Publication date	Feb 13, 2025
Grant date	—

Abstract

The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.

First claim

What is claimed is:

1 . A method of forming a spin-orbit torque (SOT) device, the method comprising:
depositing an amorphous material on a substrate, the amorphous material being selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof; exposing the amorphous material to air to form an amorphous material oxide surface on the amorphous material; and depositing a first BiSb layer on the amorphous material oxide surface, the first BiSb layer having a (001) orientation.

2 . The method of claim 1 , wherein the amorphous material oxide surface has a thickness of about 5 Å to about 15 Å.

3 . The method of claim 1 , further comprising:
depositing an interlayer on the first BiSb layer; depositing a first ferromagnetic layer on the interlayer; and depositing a cap layer on the first ferromagnetic layer.

4 . The method of claim 3 , further comprising:
depositing a second ferromagnetic layer over the cap layer; and depositing a second BiSb layer over the second ferromagnetic layer, the second BiSb layer having a (012) orientation.

5 . A magnetic recording head comprising the SOT device formed by the method of claim 1 .

6 . A magnetic recording device comprising the magnetic recording head of claim 5 .

7 . A magneto-resistive memory comprising the SOT device formed by the method of claim 1 .

8 . A magnetic sensor comprising the SOT device formed by the method of claim 1 .

9 . A method of forming a spin-orbit torque (SOT) device, the method comprising:
depositing an amorphous material on a substrate, the amorphous material being selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof; exposing the amorphous material to air to form an amorphous material oxide surface on the amorphous material; and depositing a first BiSb layer on the amorphous material oxide surface, the first BiSb layer having a (012) orientation.

10 . The method of claim 9 , further comprising:
depositing an interlayer on the first BiSb layer; depositing a first ferromagnetic layer on the interlayer; depositing a cap layer on the first ferromagnetic layer; depositing a second ferromagnetic layer over the cap layer; and depositing a second BiSb layer over the second ferromagnetic layer, the second BiSb layer having a (001) orientation.

11 . The method of claim 10 , further comprising:
forming side shields disposed adjacent to the first ferromagnetic layer, the interlayer, the cap layer, the second ferromagnetic layer, and the second BiSb layer, wherein the second BiSb layer is disposed in contact with the side shields.

12 . The method of claim 11 , wherein the first BiSb layer, the first ferromagnetic layer, the interlayer, the cap layer, and the second ferromagnetic layer are spaced from the side shields.

13 . A magnetic recording head comprising the SOT device formed by the method of claim 9 .

14 . A magnetic recording device comprising the magnetic recording head of claim 9 .

15 . A magneto-resistive memory comprising the SOT device formed by the method of claim 9 .

16 . A magnetic sensor comprising the SOT device formed by the method of claim 9 .

17 . A method of forming a spin-orbit torque (SOT) device, the method comprising:
depositing an amorphous material on a substrate, the amorphous material being selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof; forming an amorphous material oxide surface on the amorphous material; depositing a first BiSb layer on the amorphous material oxide surface; depositing a first free layer over the first BiSb layer; depositing a second free layer over the first free layer; and depositing a second BiSb layer on the second free layer, wherein:
the first BiSb layer has a (001) orientation and the second BiSb layer has a (012) orientation; or
the first BiSb layer has a (012) orientation and the second BiSb layer has a (001) orientation.

18 . The method of claim 17 , wherein the amorphous material oxide surface has a thickness of about 5 Å to about 15 Å.

19 . A magnetic recording head comprising the SOT device formed by the method of claim 17 .

20 . A magnetic recording device comprising the magnetic recording head of claim 19 .

21 . A magneto-resistive memory comprising the SOT device formed by the method of claim 17 .

22 . A magnetic sensor comprising the SOT device formed by the method of claim 17 .

Assignees

• Western Digital Tech Inc

Inventors

• Le Quang
• York Brian R
• Hwang Cherngye
• Liu Xiaoyong
• Gribelyuk Michael A
• Xu Xiaoyu
• Simmons Randy G
• Ho Kuok San
• Takano Hisashi

Classifications

• H10N52/80

  Constructional details · CPC title

• H10N52/01

  Manufacture or treatment · CPC title

• H10N52/00

  Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00) · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title