Stacked ferroelectric random access memory
US-2026096103-A1 · Apr 2, 2026 · US
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Chang Sou-Chi patents
Chang Sou-Chi is listed as an inventor on 89 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Chang Sou-Chi |
| Total patents | 89 |
| First publication | Dec 19, 2019 |
| Latest publication | Apr 2, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Memory using ferroelectric or antiferroelectric capacitors and diodes in stacked configurations
US-2026094635-A1 · Apr 2, 2026 · US
Back-end-of-line 2D memory cell
US-12575111-B2 · Mar 10, 2026 · US
Capacitors with amorphous oxide layer for high capacitance and low leakage
US-2025393189-A1 · Dec 25, 2025 · US
Composite insulator films with low electrical leakage & high charge capacitance
US-2025385047-A1 · Dec 18, 2025 · US
Device, method and system for providing (anti)ferroelectric capacitors of various thicknesses
US-2025379140-A1 · Dec 11, 2025 · US
Capacitor with dual dielectric layers
US-12495559-B2 · Dec 9, 2025 · US
Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor
US-12437929-B2 · Oct 7, 2025 · US
Defect self-compensation materials for high endurance (anti-)ferroelectric capacitors with hafnium oxide based material systems
US-2025220932-A1 · Jul 3, 2025 · US
Enhancing device performance by mitigation of oxygen migration in hafnium oxide based material systems
US-2025220921-A1 · Jul 3, 2025 · US
Recent patents
Latest publications not already listed above.
Capacitors for use with integrated circuit packages
US-2025105136-A1 · Mar 27, 2025 · US
Capacitors with built-in electric fields
US-12224309-B2 · Feb 11, 2025 · US
Self-aligned memory cell with replacement metal gate vertical access transistor and stacked 3d capacitors
US-2025008740-A1 · Jan 2, 2025 · US
Ferroelectric capacitor with insulating thin film
US-2025006434-A1 · Jan 2, 2025 · US
Thin hafnium-zirconium oxide films having large grain size for ferroelectric capacitors
US-2025006433-A1 · Jan 2, 2025 · US
Field-effect transistor (FET) with self-aligned ferroelectric capacitor and methods of fabrication
US-12166122-B2 · Dec 10, 2024 · US
Ferroelectric capacitors and methods of fabrication
US-2024373644-A1 · Nov 7, 2024 · US
Crystalline bottom electrode for perovskite capacitors and methods of fabrication
US-12100731-B2 · Sep 24, 2024 · US
Ferroelectric capacitors and methods of fabrication
US-12048165-B2 · Jul 23, 2024 · US
Ferroelectric or anti-ferroelectric trench capacitor with spacers for sidewall strain engineering
US-12040378-B2 · Jul 16, 2024 · US
Memory cells with ferroelectric capacitors separate from transistor gate stacks
US-11980037-B2 · May 7, 2024 · US
Selective ferroelectric deployment for single-transistor, multiple-capacitor devices
US-2024112714-A1 · Apr 4, 2024 · US
Improved replacement electrode process for 3d ferroelectric memory
US-2024114696-A1 · Apr 4, 2024 · US
High endurance super-lattice anti-ferroelectric capacitors
US-2024114695-A1 · Apr 4, 2024 · US
Fabrication of reconfigurable architectures using ferroelectrics
US-2024113123-A1 · Apr 4, 2024 · US
Ferroelectric capacitor within backside interconnect
US-2024114694-A1 · Apr 4, 2024 · US
Memory array comprising a ferroelectric data storage element
US-2024112731-A1 · Apr 4, 2024 · US
Device, method and system to provide a random access memory with a ferroelectric resistive junction
US-2024112730-A1 · Apr 4, 2024 · US
Capacitor structure embedded within source or drain region
US-2024113101-A1 · Apr 4, 2024 · US
Gain cell using planar and trench ferroelectric and anti-ferroelectric capacitors for edram
US-2024114697-A1 · Apr 4, 2024 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Intel Corp | 89 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10B53/30 | 49 |
| H10D1/682 | 39 |
| H10D1/692 | 28 |
| H10D1/716 | 26 |
| H10D64/689 | 22 |