Capacitor with an electrically conductive layer coupled with a metal layer of the capacitor

Patent metadata

Field	Value
Publication number	US-12437929-B2
Application number	US-202117484949-A
Country	US
Kind code	B2
Filing date	Sep 24, 2021
Priority date	Sep 24, 2021
Publication date	Oct 7, 2025
Grant date	Oct 7, 2025

Abstract

Embodiments described herein may be related to apparatuses, processes, and techniques related MIM capacitors that have a multiple trench structure to increase a charge density, where a dielectric of the MIM capacitor includes a perovskite-based material. In embodiments, a first electrically conductive layer may be coupled with a top metal layer of the MIM, and/or a second conductive layer may be coupled with a bottom metal layer of the MIM to reduce RC effects. Other embodiments may be described and/or claimed.

First claim

What is claimed is:

1. A capacitor comprising:
a first metal layer with a first side and a second side opposite the first side;
a perovskite layer with a first side and a second side opposite the first side, the first side of the perovskite layer physically coupled with the second side of the first metal layer;
a second metal layer with a first side and a second side opposite the first side, the first side of the second metal layer physically coupled with the second side of the perovskite layer, wherein the first metal layer and the second metal layer are electrically isolated from each other by the perovskite layer, and wherein the second metal layer has an end that extends laterally beyond an end of the first metal layer; and
an electrically conductive layer coupled with the second side of the second metal layer, the electrically conductive layer electrically coupled with a voltage source.

2. The capacitor of claim 1 , wherein the perovskite layer includes a selected one or more of: strontium, barium, hafnium, zirconium, aluminum, cobalt, lanthanum, tin, oxygen, SrTiO3, BaTiO3, BaHfO3, BaZrO3, LaAl03, LaCoO3, or SrSnO3.

3. The capacitor of claim 1 , wherein the first metal layer or the second metal layer included a selected one of: ruthenium, molybdenum, rhodium, tungsten, platinum, rhenium, and oxygen.

4. The capacitor claim 1 , wherein the electrically conductive layer and the second metal layer are electrically coupled with the voltage source.

5. The capacitor of claim 1 , wherein the first metal layer, the perovskite layer, and the second metal layer form a plurality of trenches.

6. The capacitor claim 5 , wherein a spacing between troughs of the plurality of trenches is 1 um or less.

7. The capacitor of claim 5 , wherein the electrically conductive layer uniformly covers the second metal layer.

8. The capacitor of claim 5 , wherein the electrically conductive layer is a first electrically conductive layer, and wherein the voltage source is a first voltage source; and further comprising:
a second electrically conductive layer coupled with the first side of the first metal layer, wherein the second electrically conductive layer is electrically coupled with a second voltage source.

9. The capacitor of claim 8 , wherein the second electrically conductive layer is physically coupled with at least a portion of a bottom of the plurality of trenches.

10. A method comprising:
identifying a core having a first side and a second side opposite the first side;
forming a plurality of trenches in the core extending from the first side of the core toward the second side of the core;
applying a first metal layer to the first side of the core, the first metal layer covering a surface of the plurality of trenches;
applying a dielectric layer to the first metal layer;
applying a second metal layer to the dielectric layer, wherein the first metal layer and the second metal layer are electrically isolated from each other by the dielectric layer, and wherein the second metal layer has an end that extends laterally beyond an end of the first metal layer; and
applying an electrically conductive layer to the second metal layer.

11. The method of claim 10 , wherein the first metal layer or the second metal layer included a selected one of: ruthenium, molybdenum, rhodium, tungsten, platinum, rhenium, and oxygen.

12. The method of claim 10 , wherein the dielectric layer is a perovskite layer that includes a selected one or more of: strontium, barium, hafnium, zirconium, aluminum, cobalt, lanthanum, tin, oxygen, SrTiO3, BaTiO3, BaHfO3, BaZrO3, LaAl03, LaCoO3, or SrSnO3.

13. The method of claim 10 , wherein forming the plurality of trenches further includes forming the plurality of trenches wherein a spacing between troughs of the plurality of trenches is lum or less.

14. The method of claim 10 , wherein the electrically conductive layer is applied uniformly on the second metal layer.

15. The method of claim 10 , wherein the electrically conductive layer is a first electrically conductive layer; and further comprising, after identifying the core, applying a second electrically conductive layer to the second side of the core; and wherein forming the plurality of trenches in the core extending from the first side of the core toward the second side of the core further includes forming a plurality of trenches in the core extending from the first side of the core to the second electrically conductive layer.

16. The method of claim 15 , wherein the first electrically conductive layer and the second electrically conductive layer are electrically isolated from each other.

17. The method of claim 15 , further comprising:
forming a first electrical contact in the core, the first electrical contact electrically coupling the second metal layer and the first electrically conductive layer; and
forming a second electrical contact into the core, the second electrical contact electrically coupling the first metal layer and the second electrically conductive layer, wherein the first electrical contact is electrically isolated from the second electrical contact.

18. The method of claim 10 , wherein the core is a selected one of: a glass core or a silicon core.

19. The method of claim 10 , wherein applying the dielectric layer further includes applying the dielectric layer using atomic layer deposition (ALD).

20. The method of claim 10 , wherein the first metal layer, the second metal layer, or the electrically conductive layer include copper.

21. A system comprising:
a substrate;
a first electrical connector coupled with the substrate;
a second electrical connector coupled with the substrate;
a capacitor coupled with the substrate, the capacitor comprising:
a first metal layer with a first side and a second side opposite the first side;
a perovskite layer with a first side and a second side opposite the first side, the first side of the perovskite layer physically coupled with the second side of the first metal layer;
a second metal layer with a first side and a second side opposite the first side, the first side of the second metal layer physically coupled with the second side of the perovskite layer, wherein the first metal layer and the second metal layer are electrically isolated from each other by the perovskite layer, and wherein the second metal layer has an end that extends laterally beyond an end of the first metal layer;
a first electrically conductive layer coupled with the second side of the second metal layer, the electrically conductive layer electrically coupled with the first electrical connector; and
a second electrically conductive layer coupled with the first side of the first metal layer, wherein the second electrically conductive layer is electrically coupled with the second electrical connector.

22. The system of claim 21 , wherein the first metal layer, the perovskite layer, and the second metal layer form a plurality of trenches; and wherein a spacing between troughs of the plurality of trenches is lum or less.

23. The system of claim 21 , wherein the first electrically conductive layer uniformly covers the second metal layer, and wherein the second electrically conductive layer uniformly covers the first metal layer, and wherein the first electrically conductive layer and the second electrically conductive layer are electrically isolated.

24. The system of claim 21 , wherein the perovskite layer includes a selected one or more of:

Assignees

• Intel Corp

Inventors

• Lin Chia-Ching
• Oguz Kaan
• Chang Sou-Chi
• Sen Gupta Arnab
• Tung I-Cheng
• Young Ian A
• Metz Matthew V
• Avci Uygar E
• Lee Sudarat

Classifications

• H10D1/692 Primary

  Electrodes · CPC title

• H01G4/35

  Feed-through capacitors or anti-noise capacitors · CPC title

• H01G4/08

  Inorganic dielectrics · CPC title

• H10D1/716

  having vertical extensions · CPC title

• H10D1/682

  having dielectrics comprising perovskite structures · CPC title