Methods for forming structures with desired crystallinity for MRAM applications
US-12408557-B2 · Sep 2, 2025 · US
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Ahn Jaesoo patents
Ahn Jaesoo is listed as an inventor on 58 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Ahn Jaesoo |
| Total patents | 58 |
| First publication | Sep 10, 2015 |
| Latest publication | Sep 2, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Spin-orbit torque MRAM structure and manufacture thereof
US-12201030-B2 · Jan 14, 2025 · US
Vertical transistor fabrication for memory applications
US-12108604-B2 · Oct 1, 2024 · US
Magnetic memory devices and methods of formation
US-12075628-B2 · Aug 27, 2024 · US
Three-dimensional memory device wordlines with reduced blocking layer damage
US-2024237337-A9 · Jul 11, 2024 · US
Three-dimensional memory device wordlines with reduced blocking layer damage
US-2024138147-A1 · Apr 25, 2024 · US
Spin-orbit torque mram structure and manufacture thereof
US-2023389441-A1 · Nov 30, 2023 · US
Methods for forming structures for MRAM applications
US-11818959-B2 · Nov 14, 2023 · US
Spin-orbit torque MRAM structure and manufacture thereof
US-11723283-B2 · Aug 8, 2023 · US
Top buffer layer for magnetic tunnel junction application
US-11621393-B2 · Apr 4, 2023 · US
Recent patents
Latest publications not already listed above.
Magnetic tunnel junctions with protection layers
US-11522126-B2 · Dec 6, 2022 · US
Method of forming ultra-smooth bottom electrode surface for depositing magnetic tunnel junctions
US-11374165-B2 · Jun 28, 2022 · US
Methods to form top contact to a magnetic tunnel junction
US-11374170-B2 · Jun 28, 2022 · US
Magnetic memory devices and methods of formation
US-2022115439-A1 · Apr 14, 2022 · US
Magnetic tunnel junctions suitable for high temperature thermal processing
US-11251364-B2 · Feb 15, 2022 · US
Methods for forming structures with desired crystallinity for MRAM applications
US-11245069-B2 · Feb 8, 2022 · US
Back end memory integration process
US-11239086-B2 · Feb 1, 2022 · US
Methods for forming structures with desired crystallinity for mram applications
US-2022013716-A1 · Jan 13, 2022 · US
Vertical transistor fabrication for memory applications
US-2022005831-A1 · Jan 6, 2022 · US
Spin-orbit torque mram structure and manufacture thereof
US-2021351342-A1 · Nov 11, 2021 · US
Methods for forming structures for mram applications
US-2021351344-A1 · Nov 11, 2021 · US
Methods for etching a structure for MRAM applications
US-11145808-B2 · Oct 12, 2021 · US
Methods for forming structures with desired crystallinity for MRAM applications
US-11133460-B2 · Sep 28, 2021 · US
Vertical transistor fabrication for memory applications
US-11127760-B2 · Sep 21, 2021 · US
Methods for forming structures for MRAM applications
US-11069853-B2 · Jul 20, 2021 · US
Methods for etching a structure for MRAM Applications
US-2021143323-A1 · May 13, 2021 · US
Top buffer layer for magnetic tunnel junction application
US-2021119119-A1 · Apr 22, 2021 · US
Magnetic tunnel junctions with protection layers
US-2021111338-A1 · Apr 15, 2021 · US
Top buffer layer for magnetic tunnel junction application
US-10923652-B2 · Feb 16, 2021 · US
Top buffer layer for magnetic tunnel junction application
US-2020403152-A1 · Dec 24, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Applied Materials Inc | 58 |
Top CPC classifications
Most common classification codes across this inventor's patents.