Methods to form top contact to a magnetic tunnel junction

Patent metadata

Field	Value
Publication number	US-11374170-B2
Application number	US-201816141470-A
Country	US
Kind code	B2
Filing date	Sep 25, 2018
Priority date	Sep 25, 2018
Publication date	Jun 28, 2022
Grant date	Jun 28, 2022

Abstract

Embodiments of the disclosure relate to methods for fabricating structures used in memory devices. More specifically, embodiments of the disclosure relate to methods for fabricating MTJ structures in memory devices. In one embodiment, the method includes forming a MTJ structure, depositing a encapsulating layer on a top and sides of the MTJ structure, depositing a dielectric material on the encapsulating layer, removing the dielectric material and the encapsulating layer disposed on the top of the MTJ structure by a chemical mechanical planarization (CMP) process to expose the top of the MTJ structure, and depositing a contact layer on the MTJ structure. The method utilizes a CMP process to expose the top of the MTJ structure instead of an etching process, which avoids damaging the MTJ structure and leads to improved electrical contact between the MTJ structure and the contact layer.

First claim

What is claimed is:

1. A method, comprising:
forming a magnetic tunnel junction structure on a first contact layer, wherein the magnetic tunnel junction structure comprises a first magnetic layer, a second magnetic layer, a non-magnetic layer disposed between the first magnetic layer and the second magnetic layer, and a cap layer disposed on the second magnetic layer, wherein the first magnetic layer comprises tantalum nitride and the cap layer comprises magnesium oxide, wherein the first magnetic layer, the non-magnetic layer, and the second magnetic layer are sequentially deposited and patterned by a plurality of reactive ion etching processes, and wherein the magnetic tunnel junction structure is tapered;
depositing an encapsulating layer in a single atomic layer deposition process on a top and sides of the magnetic tunnel junction structure, wherein the encapsulating layer comprises silicon carbon nitride, wherein the encapsulating layer is in direct contact with a side of at least one of the first magnetic layer, the second magnetic layer, or the non- magnetic layer of the magnetic tunnel junction structure, wherein the encapsulating layer is in direct contact with a topmost layer of the magnetic tunnel junction structure;
depositing a dielectric material on the encapsulating layer, the dielectric material contacting the encapsulating layer on the top and sides of the magnetic tunnel junction structure;
in a dual damascene process, removing a portion of the dielectric material contacting the encapsulating layer from over the top and surrounding the sides of the magnetic tunnel junction structure and removing a portion of the encapsulating layer only from the top of the magnetic tunnel junction structure, wherein the top of the magnetic tunnel junction structure is exposed and a via and a trench over the via are formed, and wherein the encapsulating layer has a slower etch rate compared to the dielectric material, wherein the dual damascene process comprises, sequentially:
performing a first etch process to form the via by etching the portion of the dielectric material surrounding the sides of the magnetic tunnel junction structure; and
performing a second etch process to form the trench over the via by etching the portion of the dielectric material from the top of the magnetic tunnel junction structure; and

depositing a second contact layer on the magnetic tunnel junction structure, the second contact layer comprising Ta, TaN, or TiN.

2. The method of claim 1 , wherein the non-magnetic layer comprises MgO, HfO 2 , TiO 2 , Ta 2 O 5 , or Al 2 O 3 .

3. The method of claim 1 , wherein the non-magnetic layer comprises copper, silver, molybdenum, tantalum, or tungsten.

4. The method of claim , wherein the dielectric material comprises an oxide.

5. The method of claim 1 , wherein the non-magnetic layer comprises molybdenum or tungsten.

6. A method, sequentially comprising:
forming a magnetic tunnel junction structure on a first contact layer comprising copper, wherein the magnetic tunnel junction structure comprises a magnesium oxide cap layer;
depositing an encapsulating layer on a top and sides of the magnetic tunnel junction structure, the encapsulating layer comprising silicon carbon nitride in direct physical contact with the magnetic tunnel junction structure;
depositing a dielectric material on the encapsulating layer, the dielectric material contacting the encapsulating layer on the top and sides of the magnetic tunnel junction structure;
in a dual damascene process, removing a portion of the dielectric material contacting the encapsulating layer from over the top and surrounding the sides of the magnetic tunnel junction structure and removing a portion of the encapsulating layer only from the top of the magnetic tunnel junction structure, wherein the top of the magnetic tunnel junction structure is exposed and a via and a trench over the via are formed, and wherein the encapsulating layer has a slower etch rate compared to the dielectric material, wherein the dual damascene process comprises, sequentially:
performing a first etch process to form the via by etching the portion of the dielectric material surrounding the sides of the magnetic tunnel junction structure; and
performing a second etch process to form the trench over the via by etching the portion of the dielectric material from the top of the magnetic tunnel junction structure; and

depositing a second contact layer comprising copper in the trench and the via.

7. The method of claim 6 , wherein the magnetic tunnel junction structure comprises a first magnetic layer, a second magnetic layer, and a non-magnetic layer disposed between the first magnetic layer and the second magnetic layer.

8. The method of claim 7 , wherein the non-magnetic layer comprises MgO, HfO 2 , TiO 2 , Ta 2 O 5 , or Al 2 O 3 .

9. The method of claim 7 , wherein the non-magnetic layer comprises copper, silver, molybdenum, tantalum, or tungsten.

10. A method, sequentially comprising:
forming a magnetic tunnel junction structure on a first contact layer, wherein the magnetic tunnel junction structure comprises a cap layer;
depositing an encapsulating layer on a top and sides of the magnetic tunnel junction structure, the encapsulating layer in direct physical contact with the magnetic tunnel junction structure;
depositing a dielectric material on the encapsulating layer, the dielectric material contacting the encapsulating layer on the top and sides of the magnetic tunnel junction structure;
in a dual damascene process, removing a portion of the dielectric material contacting the encapsulating layer from over the top and surrounding the sides of the magnetic tunnel junction structure and removing a portion of the encapsulating layer only from the top of the magnetic tunnel junction structure, wherein the top of the magnetic tunnel junction structure is exposed and a via and a trench over the via are formed, and wherein the encapsulating layer has a slower etch rate compared to the dielectric material, wherein the dual damascene process comprises, sequentially:
performing a first etch process to form the via by etching the portion of the dielectric material surrounding the sides of the magnetic tunnel junction structure; and
performing a second etch process to form the trench over the via by etching the portion of the dielectric material from the top of the magnetic tunnel junction structure; and

depositing a second contact layer in the trench and the via.

11. The method of claim 10 , wherein the magnetic tunnel junction structure comprises a first magnetic layer, a second magnetic layer, and a non-magnetic layer disposed between the first magnetic layer and the second magnetic layer.

12. The method of claim 11 , wherein the non-magnetic layer comprises copper, silver, molybdenum, tantalum, tungsten, MgO, HfO 2 , TiO 2 , or Al 2 O 3 .

Assignees

• Applied Materials Inc

Inventors

• Xue Lin
• Ahn Jaesoo
• Tseng Hsin-Wei
• Pakala Mahendra

Classifications

• G11C11/16

  using elements in which the storage effect is based on magnetic spin effect · CPC title

• H10B61/00

  Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices · CPC title

• H10N50/85

  Materials of the active region · CPC title

• H01L43/12 Primary

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic