Magnetic tunnel junctions with protection layers

Patent metadata

Field	Value
Publication number	US-11522126-B2
Application number	US-201916601250-A
Country	US
Kind code	B2
Filing date	Oct 14, 2019
Priority date	Oct 14, 2019
Publication date	Dec 6, 2022
Grant date	Dec 6, 2022

Abstract

A film stack for a magnetic tunnel comprises a substrate, a magnetic reference layer disposed over the substrate, and a tunnel barrier layer disposed over the magnetic reference layer. The film stack further comprises a magnetic storage layer disposed over the tunnel barrier layer, and a capping layer disposed over the magnetic storage layer. Further, the film stack comprises at least one protection layer disposed between the magnetic reference layer and the tunnel barrier layer and disposed between the magnetic storage layer and the capping layer. Additionally, a material forming the at least one protection layer differs from at least one of a material forming the magnetic reference layer and a material forming the magnetic storage layer.

First claim

What is claimed is:

1. A film stack for a magnetic tunnel junction (MTJ), comprising:
a substrate;
a magnetic reference layer formed from a Co X Fe Y B Z alloy, where z is from about 10 wt. % to about 40 wt. %, y is from about 20 wt. % to about 60 wt. %, and x is equal to or less than 70 wt. %, the magnetic reference layer disposed over the substrate;
a tunnel barrier layer consisting of one or more metal oxide layers disposed over the magnetic reference layer;
a magnetic storage layer formed from a Co X Fe Y B Z alloy, where z is from about 10 wt. % to about 40 wt. %, y is from about 20 wt. % to about 60 wt. %, and x is equal to or less than 70 wt. %, the magnetic storage layer disposed over and in contact with the tunnel barrier layer, the magnetic storage layer comprising a first magnetic layer, a second magnetic layer, and a third layer, the third layer configured to strengthen a pinning moment;
a capping layer disposed over the magnetic storage layer;
a first protection layer disposed between the magnetic reference layer and the tunnel barrier layer, the first protection layer in contact with the magnetic reference layer and the tunnel barrier layer; and
a second protection layer disposed between the magnetic storage layer and the capping layer, the second protection layer is continuous throughout an entirety of the second protection layer, the second protection layer in contact with the magnetic storage layer, wherein the second protection layer is a single layer, the first protection layer is a single layer, and wherein a material forming the first protection layer and the second protection layer differs from at least one of a material forming the magnetic reference layer and a material forming the magnetic storage layer, and wherein the first protection layer has a thickness between about 0.1 Å and about 3 Å, and the second protection layer has a thickness between about 0.1 Å and about 3 Å.

2. The film stack of claim 1 , wherein the thickness of the first protection layer is less than a thickness of the magnetic reference layer.

3. The film stack of claim 1 , wherein a material forming the first protection layer is one or more of magnesium and hafnium.

4. The film stack of claim 1 , wherein each of the first protection layer and the second protection layer further comprises at least one of magnesium, hafnium, or an alloy thereof.

5. The film stack of claim 4 , wherein the thickness of the second protection layer is less than a thickness of the magnetic storage layer.

6. The film stack of claim 4 , wherein the material forming the second protection layer differs from the material forming the magnetic storage layer.

7. The film stack of claim 4 , wherein the capping layer is comprised of a metal oxide.

8. The film stack of claim 1 , further comprising:
a structure blocking layer comprising Ta, molybdenum (Mo), tungsten (W), or combinations thereof, the structure blocking layer disposed below and in contact with the magnetic reference layer.

9. A method for forming a magnetic tunnel junction (MTJ) stack, the method comprising:
depositing a magnetic reference layer formed from a Co X Fe Y B Z alloy, where z is from about 10 wt. % to about 40 wt. %, y is from about 20 wt. % to about 60 wt. %, and x is equal to or less than 70 wt. %, the magnetic reference layer disposed over a substrate;
depositing a tunnel barrier layer consisting of one or more metal oxide layers over the magnetic reference layer;
depositing a magnetic storage layer formed from a Co X Fe Y B Z alloy, where z is from about 10 wt. % to about 40 wt. %, y is from about 20 wt. % to about 60 wt. %, and x is equal to or less than 70 wt. %, the magnetic storage layer disposed over and in contact with the tunnel barrier layer, the magnetic storage layer comprising a first magnetic layer, a second magnetic layer, and a third layer, the third layer configured to strengthen a pinning moment;
depositing a capping layer over the magnetic storage layer; and
depositing a first protection layer between the magnetic reference layer and the tunnel barrier layer, the first protection layer in contact with the magnetic reference layer and the tunnel barrier layer; and
depositing a second protection layer disposed between the magnetic storage layer and the capping layer, the second protection layer is continuous throughout an entirety of the second protection layer, the second protection layer in contact with the magnetic storage layer, wherein the second protection layer is a single layer, the first protection layer is a single layer, and wherein a material forming the first protection layer and the second protection layer differs from at least one of the magnetic reference layer and the magnetic storage layer, and wherein the first protection layer has a thickness between about 0.1 Å and about 3 Å, and the second protection layer has a thickness between about 0.1 Å and about 3 Å.

10. The method of claim 9 , wherein each of the first protection layer and the second protection layer further comprises at least one of magnesium, hafnium, or an alloy thereof.

11. The method of claim 10 , wherein the thickness of the first protection layer is less than a thickness of the magnetic reference layer.

12. The method of claim 10 , wherein the thickness of the second protection layer is less than a thickness of the magnetic storage layer.

13. The method of claim 10 , wherein the material forming the second protection layer differs from the material forming the magnetic storage layer.

14. The method of claim 10 , wherein the capping layer is comprised of a metal oxide.

15. The method of claim 9 , wherein the material forming the first protection layer is one or more of magnesium and hafnium.

16. A film stack for a magnetic tunnel junction (MTJ), comprising:
a substrate;
a magnetic reference layer formed from a Co X Fe Y B Z alloy, where z is from about 10 wt. % to about 40 wt. %, y is from about 20 wt. % to about 60 wt. %, and x is equal to or less than 70 wt. %, the magnetic reference layer disposed over the substrate;
a first protection layer is a single layer disposed over and in contact with the magnetic reference layer;
a tunnel barrier layer consisting of one or more metal oxide layers disposed over and in contact with the first protection layer;
a magnetic storage layer formed from a Co X Fe Y B Z alloy, where z is from about 10 wt. % to about 40 wt. %, y is from about 20 wt. % to about 60 wt. %, and x is equal to or less than 70 wt. %, the magnetic storage layer disposed over and in contact with the tunnel barrier layer, the magnetic storage layer comprising a first magnetic layer, a second magnetic layer, and a third layer, the third layer configured to strengthen a pinning moment;
a second protection layer disposed over and in contact with the magnetic storage layer, wherein the second protection layer is a single layer, and wherein the second protection layer is continuous throughout an entirety of the second protection layer, wherein the first protection layer has a thickness between about 0.1 Å and about 3 Å, and the second protection layer has a thickness between about 0.1 Å and about 3 Å; wherein the first protection layer and the second protection layer are comprised of one or more of magnesium and hafnium; and
a capping layer disposed over the second protection layer.

17. The film stack of claim 16 , wherein the thickness of the first protection layer is less than a thickness of the magnetic reference layer, and the thickness of the second protection layer is less than a thickness of the magnetic stor

Assignees

• Applied Materials Inc

Inventors

• Xue Lin
• Ahn Jaesoo
• Patel Sahil
• Park Chando
• Pakala Mahendra

Classifications

• G11B5/3909

  Arrangements using a magnetic tunnel junction · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H01L43/10

  Electricity · mapped topic

• H01L43/12 Primary

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic