Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US-2024030035-A1 · Jan 25, 2024 · US
the principal metal being a transition metal
the principal metal being a transition metal · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10W20/4437 |
| Official title | {the principal metal being a transition metal} |
| Display label | the principal metal being a transition metal |
| Total patents | 1,097 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 8 |
| 2016 | 19 |
| 2017 | 82 |
| 2018 | 135 |
| 2019 | 156 |
| 2020 | 175 |
| 2021 | 133 |
| 2022 | 123 |
| 2023 | 101 |
| 2024 | 88 |
| 2025 | 64 |
| 2026 | 13 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Cobalt first layer advanced metallization for interconnects
US-9852990-B1 · Dec 26, 2017 · US
Metal reflow for middle of line contacts
US-9847261-B2 · Dec 19, 2017 · US
Seam-healing method upon supra-atmospheric process in diffusion promoting ambient
US-2017358490-A1 · Dec 14, 2017 · US
Reflow enhancement layer for metallization structures
US-9842770-B1 · Dec 12, 2017 · US
Semiconductor interconnect structure with double conductors
US-9837350-B2 · Dec 5, 2017 · US
Semiconductor device and method of manufacturing semiconductor device
US-2017345806-A1 · Nov 30, 2017 · US
Interconnect structures
US-9831124-B1 · Nov 28, 2017 · US
Methods that use at least a dual damascene process and, optionally, a single damascene process to form interconnects with hybrid metallization and the resulting structures
US-9824970-B1 · Nov 21, 2017 · US
Co or Ni and Cu integration for small and large features in integrated circuits
US-9805976-B2 · Oct 31, 2017 · US
Skip via structures
US-9805972-B1 · Oct 31, 2017 · US
Heterogeneous metallization using solid diffusion removal of metal interconnects
US-9793206-B1 · Oct 17, 2017 · US
Interconnect structures and methods of forming same
US-9793212-B2 · Oct 17, 2017 · US
Methods of forming mis contact structures on transistor devices
US-2017287777-A1 · Oct 5, 2017 · US
Method for forming low parasitic capacitance source and drain contacts
US-9768062-B1 · Sep 19, 2017 · US
Contacts having a geometry to reduce resistance
US-2017263557-A1 · Sep 14, 2017 · US
Hybrid metal interconnects with a bamboo grain microstructure
US-2017256495-A1 · Sep 7, 2017 · US
Hybrid metal interconnects with a bamboo grain microstructure
US-9754885-B1 · Sep 5, 2017 · US
Method for void-free cobalt gap fill
US-9748137-B2 · Aug 29, 2017 · US
Metal reflow for middle of line contacts
US-9741577-B2 · Aug 22, 2017 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10W20/4437?
- CPC H10W20/4437 is the Cooperative Patent Classification code for “the principal metal being a transition metal.”
- How many patents are filed under CPC H10W20/4437 (the principal metal being a transition metal)?
- Our database includes 1,097 publications tagged with this CPC code.
- Is patent activity under CPC H10W20/4437 growing?
- Publication counts under this code: 88 in 2024 vs 64 in 2025 (latest complete years).