Interconnect structures

Patent metadata

Field	Value
Publication number	US-9831124-B1
Application number	US-201615338070-A
Country	US
Kind code	B1
Filing date	Oct 28, 2016
Priority date	Oct 28, 2016
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to interconnect structures and methods of manufacture. The structure includes: a cobalt metallization structure with a modified surface of etch chemistries; a layer of material on the modified surface; and an interconnect structure in direct contact with the material.

First claim

What is claimed:

1. A structure, comprising:
a cobalt metallization structure with a modified surface of etch chemistries;
a layer of material on the modified surface; and
an interconnect structure in direct contact with the material,
wherein the cobalt metallization structure includes a barrier liner material.

2. The structure of claim 1 , wherein the modified surface of etch chemistries is at least one of fluorine, oxygen and carbon.

3. The structure of claim 2 , wherein the interconnect structure is composed of cobalt or copper.

4. The structure of claim 2 , wherein the material is cobalt silicide.

5. The structure of claim 2 , wherein the material is one of cobalt and ruthenium.

6. The structure of claim 5 , wherein the material further comprises a silicide of cobalt or ruthenium.

7. A structure, comprising:
an insulator layer;
a metallization structure composed of cobalt, a barrier liner and a modified surface on the cobalt, formed in a trench of the insulator layer;
a layer of material formed on the modified surface;
a capping layer on the insulator layer; and
an interconnect structure formed through an opening in the capping layer and in direct contact with the layer of material.

8. The structure of claim 7 , wherein the modified surface is at least one of fluorine, oxygen and carbon.

9. The structure of claim 8 , wherein the layer of material is cobalt silicide.

10. The structure of claim 8 , wherein the layer of material is one of cobalt and ruthenium.

11. The structure of claim 10 , wherein the layer of material further comprises a silicide of cobalt or ruthenium.

12. A method comprising:
forming a metallization structure in an insulator layer;
forming a capping layer and insulator layer over the metallization structure;
etching a trench into the insulator layer and capping layer to expose a surface of the metallization structure, which results in a modified surface of the metallization structure;
forming a material over the modified surface; and
depositing an interconnect structure in the trench and in direct contact with the material,
wherein the material is one of:
a silicide;
cobalt deposited by an electroless or growth process on the modified surface; and
ruthenium deposited by an electroless or growth process on the modified surface.

13. The method of claim 12 , wherein the silicide is formed by a trisilylamine (TSA) treatment post etching process and prior to a wet clean process.

14. The method of claim 12 , further comprising performing a silicide process on the cobalt to form a cobalt silicide layer.

15. The method of claim 12 , further comprising performing a silicide process on the ruthenium to form a ruthenium silicide layer.

16. The method of claim 12 , wherein the interconnect structure is cobalt or copper.

Assignees

• Globalfoundries Inc

Inventors

• Zhang Xunyuan
• Mont Frank W

Classifications

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10W20/4421

  the principal metal being copper · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/4403

  based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

• H10W20/048

  by using plasmas or gaseous environments, e.g. by nitriding · CPC title