Manufacturing a package using plateable encapsulant

Patent metadata

Field	Value
Publication number	US-11081417-B2
Application number	US-201916514853-A
Country	US
Kind code	B2
Filing date	Jul 17, 2019
Priority date	Mar 3, 2016
Publication date	Aug 3, 2021
Grant date	Aug 3, 2021

Abstract

A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

First claim

What is claimed is:

1. A method of manufacturing a package, the method comprising:
embedding a semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm,
wherein the encapsulant comprises a polymer cluster and a coupling agent between the transition metal and the polymer cluster;
selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and
plating the converted part of the encapsulant with an electrically conductive material.

2. The Method according to claim 1 , further comprising electrically coupling of a redistribution layer with the semiconductor chip.

3. The Method according to claim 1 ,
wherein the encapsulant is a mold compound.

4. The Method according to claim 1 ,
wherein the plating comprises a plating of an outer lateral sidewall of the converted part of the encapsulant with an electrically conductive material.

5. The Method according to claim 1 ,
wherein the sidewall of the encapsulant is exposed before the plating, in particular is exposed by sawing, while the encapsulant of the package is arranged on a temporary carrier.

6. The Method according to claim 1 ,
wherein the selectively converting of a part of the transition metal comprises a laser treatment.

7. The Method according to claim 1 ,
wherein the selectively converting of a part of the transition metal comprises a chemical reduction.

8. The Method according to claim 1 ,
wherein the plating is an electroless plating.

9. The Method according to claim 1 ,
wherein the transition metal is selected from one of the group consisting of palladium, nickel and copper.

10. The Method according to claim 1 ,
wherein the semiconductor chip is a power semiconductor chip.

11. The Method according to claim 1 ,
wherein an external periphery comprises a at least one of a printed circuit board, an antenna structure, a wiring connections for such an antenna structure, an EMI shielding structures and a passive component.

12. The Method according to claim 1 ,
coupling a complexing agent to the transition metal, in particular configured to enhance a chemical stearic effect to maintain an electrically insulating behaviour of the transition metal in a bulk mold compound.

13. The Method according to claim 1 ,
wherein the polymer cluster comprises at least one material of a group consisting of a wax, an adhesion promoter, a mold compound catalyst, and a coupling agent for silica.

14. The Method according to claim 1 ,
wherein the polymer cluster comprises at least one rest, in particular at least one of a hydrophobic group, and a hydrophilic group.

15. The Method according to claim 1 , the method further comprising
removing a surface portion of the polymer cluster to thereby expose the transition metal;
activating the exposed transition metal.

16. The method according to claim 1 , wherein the transition metal is presented in the form of organometallic compound.

17. A package, comprising:
at least one semiconductor chip; and
an encapsulant in which the semiconductor chip is embedded;
wherein the encapsulant comprises a transition metal in a concentration in a range between 10 ppm and 10,000 ppm,
wherein the encapsulant comprises a polymer cluster and a coupling agent between the transition metal and the polymer cluster,
wherein a part of the transition metal comprises a converted part configured for providing an electrical conductivity of the encapsulant,
wherein the converted part of the transition metal of the encapsulant is plated with an electrically conductive material.

Assignees

• Infineon Technologies Ag

Inventors

• Chan Sook Woon
• Chiang Chau Fatt
• Chua Kok Yau
• Goh Soon Lock
• Lee Swee Kah
• Mahler Joachim
• Ng Mei Chin
• See Beng Keh
• Tee Guan Choon Matthew Nelson

Classifications

• H10W42/284

  shielding resins · CPC title

• H10W42/276

  the arrangements being on an external surface of the package, e.g. on the outer surface of an encapsulation · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W72/0198

  batch processes · CPC title

• H10W72/07255

  changes in materials · CPC title