Microelectronic devices, and related memory devices and integrated circuit devices
US-2025344512-A1 · Nov 6, 2025 · US
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Violette Michael P patents
Violette Michael P is listed as an inventor on 57 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Violette Michael P |
| Total patents | 57 |
| First publication | Feb 19, 2015 |
| Latest publication | Nov 6, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Memory device including circuitry under bond pads
US-2025343083-A1 · Nov 6, 2025 · US
Capacitor structures
US-12382726-B2 · Aug 5, 2025 · US
Memory device including circuitry under bond pads
US-12362244-B2 · Jul 15, 2025 · US
Capacitor structures
US-2024186313-A1 · Jun 6, 2024 · US
Memory device including circuitry under bond pads
US-2023005799-A1 · Jan 5, 2023 · US
Resistive memory architectures with multiple memory cells per access device
US-2022271224-A1 · Aug 25, 2022 · US
Memory device including circuitry under bond pads
US-11424169-B2 · Aug 23, 2022 · US
Resistive memory architectures with multiple memory cells per access device
US-11349072-B2 · May 31, 2022 · US
Phase change memory cell with constriction structure
US-2021193916-A1 · Jun 24, 2021 · US
Recent patents
Latest publications not already listed above.
Memory device including circuitry under bond pads
US-2021043525-A1 · Feb 11, 2021 · US
Resistive memory architectures with multiple memory cells per access device
US-2021005811-A1 · Jan 7, 2021 · US
Phase change memory cell with constriction structure
US-10879459-B2 · Dec 29, 2020 · US
Buried low-resistance metal word lines for cross-point variable-resistance material memories
US-10847722-B2 · Nov 24, 2020 · US
Resistive memory architectures with multiple memory cells per access device
US-10797237-B2 · Oct 6, 2020 · US
Phase change memory cell with constriction structure
US-10777739-B2 · Sep 15, 2020 · US
Buried low-resistance metal word lines for cross-point variable-resistance material memories
US-10573812-B2 · Feb 25, 2020 · US
Resistive memory architectures with multiple memory cells per access device
US-2020044151-A1 · Feb 6, 2020 · US
Method and apparatus for reducing capacitance of input/output pins of memory device
US-10453829-B2 · Oct 22, 2019 · US
Apparatuses including memory devices and related electronic systems
US-10446750-B2 · Oct 15, 2019 · US
Apparatuses including memory devices and related electronic systems
US-2019173007-A1 · Jun 6, 2019 · US
Memory device having self-aligned cell structure
US-10276635-B2 · Apr 30, 2019 · US
Buried low-resistance metal word lines for cross-point variable-resistance material memories
US-2019027684-A1 · Jan 24, 2019 · US
Buried low-resistance metal word lines for cross-point variable-resistance material memories
US-2019027685-A1 · Jan 24, 2019 · US
Methods of operating memory devices and electronic systems
US-10164186-B2 · Dec 25, 2018 · US
Method and apparatus for reducing capacitance of input/output pins of memory device
US-2018366453-A1 · Dec 20, 2018 · US
Buried low-resistance metal word lines for cross-point variable-resistance material memories
US-10090464-B2 · Oct 2, 2018 · US
Phase change memory cell with constriction structure
US-10008664-B2 · Jun 26, 2018 · US
Resistive memory architectures with multiple memory cells per access device
US-9997701-B2 · Jun 12, 2018 · US
Phase change memory cell with constriction structure
US-2018138398-A1 · May 17, 2018 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Micron Technology Inc | 42 |
| Ovonyx Memory Tech Llc | 13 |
| Lodestar Licensing Group Llc | 3 |
| Intel Corp | 2 |
| Liu Jun | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10N70/8828 | 40 |
| H10N70/231 | 40 |
| H10N70/826 | 39 |
| H01L45/1233 | 36 |
| H01L45/06 | 34 |