Phase change memory cell with constriction structure

Patent metadata

Field	Value
Publication number	US-10879459-B2
Application number	US-201715850570-A
Country	US
Kind code	B2
Filing date	Dec 21, 2017
Priority date	Mar 14, 2008
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element. Other embodiments are described.

First claim

What is claimed is:

1. A device comprising:
a first electrode and a second electrode; and
a memory element including a material configured to change between different phases and to pass a current between the first and second electrodes, the memory element including:
a first portion coupled to the first electrode and having a first cross-section area configured to allow the current to pass through;
a second portion coupled to the second electrode and having a second cross-section area and configured to allow the current to pass through; and

a third portion coupled between the first and second portions and having a third cross-section area configured to allow the current to pass through, wherein the third cross-section area is smaller than each of the first and second cross-section areas, a part of the second portion and a part of the third portion form a programmable portion of the memory element, each of the part of the third portion and the part of the second portion is included in the material configured to change between multiple phases, the third portion includes is a tapered part between the first portion and the second portion, and the programmable portion includes the tapered part wherein the memory element includes an intermediate material between the first and second portions, the intermediate material having a resistance value lower than a resistance value of each of the first, second, and third portions.

2. The device of claim 1 , wherein the first, second, and third portions include an identical material.

3. A device comprising:
a first electrode and a second electrode; and
a memory element including a material configured to change between different phases and to pass a current between the first and second electrodes, the memory element including:
a first portion coupled to the first electrode and having a first cross-section area configured to allow the current to pass through;
a second portion coupled to the second electrode and having a second cross-section area and configured to allow the current to pass through; and

a third portion coupled between the first and second portions and having a third cross-section area configured to allow the current to pass through, wherein the third cross-section area is smaller than each of the first and second cross-section areas, a part of the second portion and a part of the third portion form a programmable portion of the memory element, each of the part of the third portion and the part of the second portion is included in the material configured to change between multiple phases, the third portion includes is a tapered part between the first portion and the second portion, and the programmable portion includes the tapered part wherein the memory, element includes an intermediate material between the first and second portions, the intermediate material including one of TiN, ZrN, HfN, VN, NbN, TaN, TiC, ZrC, HfC, VC, NbC, TaC, TiB 2 , ZrB 2 , HfB 2 , VB 2 , NbB 2 , TaB 2 , Cr 3 C 2 , Mo 2 C, WC, CrB 2 , Mo 2 B5, W 2 B 5 , TiAlN, TiSiN, TiW, TaSiN, TiCN, SiC, B 4 C, WSix, MoSi 2 , NiCr, doped silicon, carbon, platinum, niobium, tungsten, and molybdenum.

4. The device of claim 3 , wherein the material includes a compound of germanium, antimony, and tellurium.

5. A device comprising:
a first electrode and a second electrode; and
a memory element including a programmable portion configured to change between different phases to represent a value of information stored in the memory element, the memory element including:
a first portion coupled to the first electrode and having a first cross-section area configured to allow the current to pass through;
a second portion coupled to the second electrode and having a second cross-section area and configured to allow the current to pass through, wherein the programmable portion is between the first and second portions, the programmable portion includes a part of the first portion and a part of the second portion, the part of the first portion directly contacts the part of the second portion, each of the part of the first portion and the part of the second portion includes a material configured to change between multiple phases, the first portion includes a tapered part, the tapered part is included in the part of the first portion, and the programmable portion includes the tapered part, wherein,
the first portion includes a first width adjacent the part of the second portion, the first width extending in a direction perpendicular to a direction between the first and second electrodes, and a second width adjacent the first electrode, the second width extending in the direction perpendicular to the direction between the first and second electrodes, and the first width is less than the second width; and
the second portion includes a third width adjacent the part of the first portion, the third width extending in the direction perpendicular to the direction between the first and second electrodes; and a fourth width adjacent the second electrode, the fourth width extending in the direction perpendicular to the direction between the first and second electrodes, and the third width is equal to the fourth width.

6. The device of claim 5 , wherein the first portion directly contacts the first electrode.

7. The device of claim 6 , wherein the second portion directly contacts the second electrode.

8. The device of claim 5 , wherein the first and second portions include an identical material.

9. The device of claim 8 , wherein the material includes a chalcogenide material.

10. The device of claim 5 , wherein the programmable portion is configured to change between a crystalline phase and an amorphous phase, and wherein the programmable portion in the amorphous phase has a first thickness corresponding to a first value of information stored in the memory element, and a second thickness corresponding to a second value of information stored in the memory element.

11. The device of claim 10 , wherein the programmable portion in the amorphous phase has a third thickness corresponding to a third first value of information stored in the memory element.

12. The device of claim 5 , wherein the programmable portion is configured to store information representing a single bit.

13. The device of claim 5 , wherein the programmable portion is configured to store information representing multiple bits.

14. A method comprising:
forming a first electrode;
forming a memory element over the first electrode;
forming a second electrode over the memory element, the memory element formed to include a material configured to change between different phases and to pass a current between the first and second electrodes, wherein forming the memory element includes:
forming a first portion of the memory element over the first electrode, the first portion having a first cross-section area configured to allow the current to pass through;
forming a second portion of the memory element over the first portion, the second portion having a second cross-section area and configured to allow the current to pass through, wherein the second portion is formed after the first portion is formed; and
the memory element is formed such that a part of the second portion and a part of the first portion form a programmable portion of the memory element, each of the part of the first portion and the part of the second portion is included in the material configured to change between multiple phases, the first portion includes a tapered part between the first portion and the second portion, and the programmable portion includes the tapered part, and the memory element is formed such

Assignees

• Micron Technology Inc

Inventors

• Liu Jun
• Violette Michael P

Classifications

• H10N70/828 Primary

  Current flow limiting means within the switching material region, e.g. constrictions · CPC title

• H10N70/882

  Compounds of sulfur, selenium or tellurium, e.g. chalcogenides · CPC title

• H10N70/066

  by filling of openings, e.g. damascene method · CPC title

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title

• H10N70/884

  based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883) · CPC title