Semiconductor structure
US-2026075789-A1 · Mar 12, 2026 · US
This page is not indexed by search engines while we improve data quality.
Peng Yuan-Ching patents
Peng Yuan-Ching is listed as an inventor on 133 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Peng Yuan-Ching |
| Total patents | 133 |
| First publication | Jan 20, 2015 |
| Latest publication | Mar 12, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Integrated circuit structure and method for fabricating the same
US-12557365-B2 · Feb 17, 2026 · US
Semiconductor structure and method of forming the same
US-2025391663-A1 · Dec 25, 2025 · US
Multi-gate field-effect transistors and methods of forming the same
US-12501658-B2 · Dec 16, 2025 · US
Semiconductor fin cut process and structures formed thereby
US-2025364259-A1 · Nov 27, 2025 · US
Transition between different active regions
US-2025359215-A1 · Nov 20, 2025 · US
Memory structure and method for manufacturing the same
US-12477712-B2 · Nov 18, 2025 · US
Gate-all-around devices
US-2025351549-A1 · Nov 13, 2025 · US
Inner spacers for multi-gate transistors and manufacturing method thereof
US-2025351512-A1 · Nov 13, 2025 · US
Semiconductor device structure and methods of forming the same
US-2025318167-A1 · Oct 9, 2025 · US
Recent patents
Latest publications not already listed above.
Method of manufacturing a semiconductor device and a semiconductor device
US-2025318156-A1 · Oct 9, 2025 · US
Dielectric isolation structure for multi-gate transistors
US-2025311265-A1 · Oct 2, 2025 · US
Multi-Gate Transistor Channel Height Adjustment
US-2025311387-A1 · Oct 2, 2025 · US
Multi-gate transistor channel height adjustment
US-12426347-B2 · Sep 23, 2025 · US
Method and structure for air gap inner spacer in gate-all-around devices
US-12426297-B2 · Sep 23, 2025 · US
Integrated circuit structure with backside dielectric layer having air gap
US-2025266293-A1 · Aug 21, 2025 · US
Multigate Device Structure with Engineered Cladding and Method Making the Same
US-2025266290-A1 · Aug 21, 2025 · US
Gate-all-around devices
US-2025261433-A1 · Aug 14, 2025 · US
Semiconductor Devices Including Backside Vias and Methods of Forming the Same
US-2025254913-A1 · Aug 7, 2025 · US
Devices with improved operational current and reduced leakage current
US-2025254942-A1 · Aug 7, 2025 · US
Method of manufacturing a semiconductor device and a semiconductor device
US-12369334-B2 · Jul 22, 2025 · US
Semiconductor structure and method for forming the same
US-2025227975-A1 · Jul 10, 2025 · US
Dielectric isolation structure for multi-gate transistors
US-12349381-B2 · Jul 1, 2025 · US
Inner spacer structure and methods of forming such
US-2025212498-A1 · Jun 26, 2025 · US
Dielectric fin structure
US-2025194141-A1 · Jun 12, 2025 · US
Semiconductor Structures and Methods of Forming Same
US-2025185296-A1 · Jun 5, 2025 · US
Seal ring structures
US-2025183199-A1 · Jun 5, 2025 · US
Semiconductor Device With Tunable Channel Layer Usage And Methods Of Fabrication Thereof
US-2025176215-A1 · May 29, 2025 · US
Gate all around device and method of forming the same
US-2025169111-A1 · May 22, 2025 · US
Integrated circuit structure with backside dielectric layer having air gap
US-12308287-B2 · May 20, 2025 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 132 |
| Lin Chia-Pin | 2 |
| Peng Yuan-Ching | 2 |
| Taiwan Semiconductor Mfg | 2 |
| Chen Hung-Kai | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/6735 | 123 |
| H10D30/6757 | 120 |
| H10D62/121 | 116 |
| H10D30/014 | 113 |
| H10D84/038 | 112 |