Amorphous bottom electrode structure for mim capacitors
US-2026096110-A1 · Apr 2, 2026 · US
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Lin Hsing-Lien patents
Lin Hsing-Lien is listed as an inventor on 229 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Lin Hsing-Lien |
| Total patents | 229 |
| First publication | Feb 5, 2015 |
| Latest publication | Apr 2, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Thermal dispersion layer in programmable metallization cell
US-2026090287-A1 · Mar 26, 2026 · US
Multi-layer electrode to improve performance of ferroelectric memory device
US-12588271-B2 · Mar 24, 2026 · US
Amorphous bottom electrode structure for MIM capacitors
US-12527014-B2 · Jan 13, 2026 · US
Thermal dispersion layer in programmable metallization cell
US-12507601-B2 · Dec 23, 2025 · US
Memory device structure with data storage element
US-2025366381-A1 · Nov 27, 2025 · US
Ferroelectric random access memory device with seed layer
US-2025365979-A1 · Nov 27, 2025 · US
Mim capacitor and method of forming the same
US-2025359079-A1 · Nov 20, 2025 · US
Method to reduce breakdown failure in a mim capacitor
US-2025344418-A1 · Nov 6, 2025 · US
Ferroelectric Memory Device and Method of Manufacturing the Same
US-2025318143-A1 · Oct 9, 2025 · US
Recent patents
Latest publications not already listed above.
Rram structure
US-2025311646-A1 · Oct 2, 2025 · US
Resistive memory cell with switching layer comprising one or more dopants
US-2025311645-A1 · Oct 2, 2025 · US
MIM capacitor and method of forming the same
US-12432942-B2 · Sep 30, 2025 · US
FeRAM WITH LAMINATED FERROELECTRIC FILM AND METHOD FORMING SAME
US-2025294776-A1 · Sep 18, 2025 · US
RRAM structure
US-12414484-B2 · Sep 9, 2025 · US
Memory device structure with data storage element
US-12408567-B2 · Sep 2, 2025 · US
Method to reduce breakdown failure in a MIM capacitor
US-12408354-B2 · Sep 2, 2025 · US
Device structure and manufacturing method thereof
US-2025275478-A1 · Aug 28, 2025 · US
Techniques to inhibit delamination from flowable gap-fill dielectric
US-2025246538-A1 · Jul 31, 2025 · US
Memory device with improved performance
US-2025241211-A1 · Jul 24, 2025 · US
Resistive memory cell with switching layer comprising one or more dopants
US-12364171-B2 · Jul 15, 2025 · US
FeRAM with laminated ferroelectric film and method forming same
US-12356631-B2 · Jul 8, 2025 · US
Capacitor structure and method of making the same
US-12336201-B2 · Jun 17, 2025 · US
Diffusion barrier layer in top electrode to increase break down voltage
US-2025194121-A1 · Jun 12, 2025 · US
Resistive memory cell having a low forming voltage
US-2025176447-A1 · May 29, 2025 · US
RRAM device with improved performance
US-12295270-B2 · May 6, 2025 · US
Techniques to inhibit delamination from flowable gap-fill dielectric
US-12266604-B2 · Apr 1, 2025 · US
Mim capacitor with a symmetrical capacitor insulator structure
US-2025105137-A1 · Mar 27, 2025 · US
Diffusion barrier layer in top electrode to increase break down voltage
US-12261197-B2 · Mar 25, 2025 · US
Semiconductor device and method for manufacturing the same
US-2025081864-A1 · Mar 6, 2025 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 227 |
| Taiwan Semiconductor Mfg | 8 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10N70/826 | 123 |
| H10N70/063 | 112 |
| H10N70/8833 | 99 |
| H10N70/24 | 92 |
| H10N70/841 | 77 |