RRAM structure

Patent metadata

Field	Value
Publication number	US-12414484-B2
Application number	US-202418603313-A
Country	US
Kind code	B2
Filing date	Mar 13, 2024
Priority date	Sep 21, 2018
Publication date	Sep 9, 2025
Grant date	Sep 9, 2025

Abstract

In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a bottom electrode structure disposed over a lower interconnect within a lower inter-level dielectric (ILD) layer over a substrate. The bottom electrode structure has an upper surface including a noble metal. A diffusion barrier layer is over the bottom electrode structure, a data storage structure is over the diffusion barrier layer, and a top electrode structure is over the data storage structure. The diffusion barrier layer is configured to mitigate a diffusion of noble metal atoms from the bottom electrode structure to the data storage structure.

First claim

What is claimed is:

1. An integrated chip, comprising:
a bottom electrode structure disposed over a lower interconnect within a lower inter-level dielectric (ILD) layer over a substrate, wherein the bottom electrode structure comprises an upper surface having a noble metal;
a diffusion barrier layer over the bottom electrode structure;
a data storage structure over the diffusion barrier layer;
a top electrode structure over the data storage structure; and
wherein the diffusion barrier layer is configured to mitigate a diffusion of noble metal atoms from the bottom electrode structure to the data storage structure.

2. The integrated chip of claim 1 , further comprising:
a dielectric material arranged along one or more sidewalls and over an upper surface of the top electrode structure; and
an upper ILD layer arranged along sidewalls and over an upper surface of the dielectric material.

3. The integrated chip of claim 2 , wherein the dielectric material physically contacts the one or more sidewalls and the upper surface of the top electrode structure.

4. The integrated chip of claim 2 , further comprising:
an upper interconnect structure extending through the upper ILD layer and the dielectric material to contact the top electrode structure.

5. The integrated chip of claim 4 , wherein the dielectric material laterally contacts the upper interconnect structure.

6. The integrated chip of claim 2 , wherein the dielectric material has a bottommost surface that is over the diffusion barrier layer.

7. The integrated chip of claim 2 , wherein the dielectric material physically contacts a sidewall and an upper surface of the data storage structure.

8. The integrated chip of claim 1 , further comprising:
a bottom electrode diffusion barrier arranged vertically between the bottom electrode structure and the lower interconnect, wherein the diffusion barrier layer has a greater width than a bottom surface of the bottom electrode diffusion barrier.

9. An integrated chip, comprising:
a first electrode structure disposed over a substrate, wherein the first electrode structure comprises a surface having a noble metal;
a diffusion barrier on the surface of the first electrode structure;
a switching structure disposed on the diffusion barrier and being configured to store data, wherein the diffusion barrier is configured to mitigate a diffusion of noble metal atoms from the first electrode structure into the switching structure; and
a second electrode structure on the switching structure.

10. The integrated chip of claim 9 , wherein the diffusion barrier has an inner upper surface that is arranged laterally between and vertically below an outer upper surface of the diffusion barrier, the outer upper surface wrapping around the inner upper surface in a plan-view of the diffusion barrier.

11. The integrated chip of claim 10 , further comprising:
an insulating structure laterally surrounding the first electrode structure, wherein the first electrode structure continuously extends from over the insulating structure to a bottom of the insulating structure.

12. The integrated chip of claim 9 , wherein the diffusion barrier has a larger thickness measured through a center of the diffusion barrier than along an outermost sidewall of the diffusion barrier.

13. The integrated chip of claim 9 , further comprising:
a sidewall spacer contacting the diffusion barrier and being arranged along outermost sidewalls of the switching structure and the second electrode structure.

14. The integrated chip of claim 9 , wherein the diffusion barrier comprises ruthenium or iridium.

15. The integrated chip of claim 9 , wherein the diffusion barrier has a surface physically contacting the noble metal along an interface.

16. An integrated chip, comprising:
a first electrode structure comprising a first electrode diffusion barrier and a noble metal on the first electrode diffusion barrier;
a diffusion barrier layer on the first electrode structure, the diffusion barrier layer being separated from the first electrode diffusion barrier by the noble metal;
a data storage structure on the diffusion barrier layer; and
a second electrode structure on the data storage structure.

17. The integrated chip of claim 16 , wherein the diffusion barrier layer has a substantially flat first surface physically contacting the noble metal.

18. The integrated chip of claim 17 , wherein the diffusion barrier layer has a substantially flat second surface physically contacting the data storage structure, the substantially flat second surface opposing the substantially flat first surface.

19. The integrated chip of claim 16 , wherein the data storage structure comprises hafnium oxide, zirconium oxide, aluminum oxide, nickel oxide, tantalum oxide, or titanium oxide.

20. The integrated chip of claim 16 , wherein the diffusion barrier layer completely separates the noble metal from the data storage structure.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Trinh Hai-Dang
• Wu Chii-Ming
• Lin Hsing-Lien
• JIANG Fa-Shen

Classifications

• H10W20/43

  Layouts of interconnections · CPC title

• H10N70/8836

  Complex metal oxides, e.g. perovskites, spinels · CPC title

• H10N70/8833

  Binary metal oxides, e.g. TaOx · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• H10N70/24 Primary

  based on migration or redistribution of ionic species, e.g. anions, vacancies · CPC title