RRAM device with improved performance

Patent metadata

Field	Value
Publication number	US-12295270-B2
Application number	US-202117511858-A
Country	US
Kind code	B2
Filing date	Oct 27, 2021
Priority date	Oct 15, 2019
Publication date	May 6, 2025
Grant date	May 6, 2025

Abstract

The present disclosure relates to a resistive random access memory (RRAM) device. In some embodiments, the RRAM device includes a first electrode disposed over a substrate and a second electrode over the first electrode. A doped data storage structure is disposed between the first electrode and the second electrode. The doped data storage structure has a dopant with a doping concentration profile that is asymmetric over a height of the doped data storage structure and that has a maximum dopant concentration at non-zero distances from a top surface and a bottom surface of the doped data storage structure.

First claim

What is claimed is:

1. A device, comprising:
a first electrode disposed over a substrate;
a second electrode over the first electrode;
a doped data storage structure disposed between the first electrode and the second electrode, wherein the doped data storage structure has a dopant with a doping concentration profile that is asymmetric over a height of the doped data storage structure and that has a maximum dopant concentration at non-zero distances from a top surface and a bottom surface of the doped data storage structure; and
wherein the doping concentration profile comprises a first region having a first doping concentration that increases over a first non-zero height, a second region having a second doping concentration that decreases over a second non-zero height, and a third region having a third doping concentration that is substantially constant over a third non-zero height, the maximum dopant concentration being disposed between the first region and the second region.

2. The device of claim 1 , wherein the doped data storage structure has a doping profile with a substantially zero doping concentration along the top surface of the doped data storage structure.

3. The device of claim 1 , wherein the doping concentration profile has a skew normal distribution that is vertically offset from a center of the doped data storage structure.

4. The device of claim 1 , wherein the maximum dopant concentration is a molar percentage of the dopant that is in a range of between approximately 1% and approximately 20%.

5. The device of claim 1 , wherein the dopant comprises fluorine, phosphorous, or carbon.

6. The device of claim 1 , wherein the third doping concentration is a substantially zero doping concentration.

7. The device of claim 1 , wherein the third region is separated from the first region by the second region.

8. The device of claim 1 , wherein the doping concentration profile has an arched shape.

9. A device, comprising:
a lower electrode structure over a substrate;
a doped data storage structure over the lower electrode structure, wherein the doped data storage structure has a doping concentration profile that is asymmetric over a height of the doped data storage structure and that continually increases from a lower surface of the doped data storage structure facing the lower electrode structure to a peak dopant concentration at a distance over the lower surface, the distance being between approximately 5% and approximately 40% of a thickness of the doped data storage structure; and
an upper electrode structure over the doped data storage structure.

10. The device of claim 9 , wherein the peak dopant concentration is a molar percentage of a dopant that is in a range of between approximately 1% and approximately 10%.

11. The device of claim 9 , wherein the doping concentration profile has a non-zero doping concentration continuously extending from a top surface of the doped data storage structure to a bottom surface of the doped data storage structure.

12. The device of claim 9 , wherein the doping concentration profile continually increases from an upper surface of the doped data storage structure to the peak dopant concentration.

13. The device of claim 9 , wherein the doping concentration profile comprises a first region having a variable doping concentration over a first non-zero height and a second region having a second doping concentration that is substantially constant over a second non-zero height, the peak dopant concentration being disposed within the first region.

14. The device of claim 9 , wherein the doping concentration profile within the doped data storage structure has a same non-zero doping concentration both vertically above and vertically below the peak dopant concentration shape.

15. A method of forming a device, comprising:
forming a lower electrode structure over a substrate;
forming a doped data storage structure over the lower electrode structure, wherein the doped data storage structure has a doped region with an asymmetric doping concentration profile that comprises a maximum dopant concentration at a depth of between approximately 5% and 40% of a thickness of the doped data storage structure;
forming an upper electrode structure over the doped data storage structure; and
wherein the asymmetric doping concentration profile continually decreases from the maximum dopant concentration towards both the lower electrode structure and the upper electrode structure.

16. The method of claim 15 , wherein the doped data storage structure is formed by way of a multi-step deposition process that forms a plurality of data storage layers respectively having different concentrations of a dopant.

17. The method of claim 15 , wherein the asymmetric doping concentration profile has an arched shape.

18. The method of claim 15 , wherein the maximum dopant concentration is a molar percentage of a dopant that is in a range of between approximately 1% and approximately 20%.

19. The method of claim 15 , wherein the asymmetric doping concentration profile comprises a first region having a variable doping concentration over a first non-zero height and a second region having a second doping concentration that is substantially constant over a second non-zero height, the maximum dopant concentration being disposed within the first region.

20. The method of claim 15 , wherein the asymmetric doping concentration profile within the doped data storage structure has a first doping concentration vertically between the maximum dopant concentration and the lower electrode structure and a second doping concentration vertically between the maximum dopant concentration and the upper electrode structure, the first doping concentration being equal to the second doping concentration.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• JIANG Fa-Shen
• Tsai Cheng-Yuan
• Trinh Hai-Dang
• Lin Hsing-Lien
• Lee Bi-Shen

Classifications

• H10N70/8836

  Complex metal oxides, e.g. perovskites, spinels · CPC title

• H10N70/841

  Electrodes · CPC title

• H10N70/023

  by chemical vapor deposition, e.g. MOCVD, ALD · CPC title

• H10B63/00

  Resistance change memory devices, e.g. resistive RAM [ReRAM] devices · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title