Memory device structure with data storage element

Patent metadata

Field	Value
Publication number	US-12408567-B2
Application number	US-202318358685-A
Country	US
Kind code	B2
Filing date	Jul 25, 2023
Priority date	Nov 24, 2017
Publication date	Sep 2, 2025
Grant date	Sep 2, 2025

Abstract

A semiconductor device structure is provided. The structure includes a substrate and a data storage element over the substrate. The structure also includes a protective element extending into the data storage element. A bottom surface of the protective element is between a top surface of the data storage element and a bottom surface of the data storage element. The structure further includes a first electrode electrically connected to the data storage element and a second electrode electrically connected to the data storage element.

First claim

What is claimed is:

1. A semiconductor device structure, comprising:
a substrate;
a data storage element over the substrate;
a protective element extending into the data storage element, wherein a bottom surface of the protective element is between a top surface of the data storage element and a bottom surface of the data storage element;
a first electrode electrically connected to the data storage element;
a second electrode electrically connected to the data storage element;
an ion diffusion barrier layer between the data storage element and the second electrode, wherein the ion diffusion barrier layer is spaced apart from the second electrode, and the protective element extends across opposite surfaces of the ion diffusion barrier layer; and
a metal capping element between the ion diffusion barrier layer and the second electrode, wherein the protective element extends upwards along sidewalls of the data storage element, the ion diffusion barrier layer, the metal capping element, and the second electrode to reach a height level higher than a topmost surface of the second electrode.

2. The semiconductor device structure as claimed in claim 1 , wherein the data storage element is made of an oxygen-containing dielectric material.

3. The semiconductor device structure as claimed in claim 1 , wherein the ion diffusion barrier element is a metal material doped with nitrogen.

4. The semiconductor device structure as claimed in claim 1 , wherein the ion diffusion barrier layer is a metal material doped with carbon.

5. The semiconductor device structure as claimed in claim 1 , wherein a lower portion of the data storage element is wider than an upper portion of the data storage element.

6. The semiconductor device structure as claimed in claim 5 , wherein the data storage element has a surface connecting a first sidewall of the lower portion and a second sidewall of the upper portion, and slopes of the surface and the first sidewall are different from each other.

7. The semiconductor device structure as claimed in claim 1 , wherein the protective element has an inner edge and an outer edge, the inner edge is between the outer edge and the data storage element, and the outer edge is substantially aligned with an edge of the first electrode.

8. The semiconductor device structure as claimed in claim 1 , wherein the metal capping element comprises titanium, hafnium, zirconium, tantalum, nickel, or tungsten.

9. The semiconductor device structure as claimed in claim 1 , wherein the ion diffusion barrier layer has a first thickness, the metal capping element has a second thickness, and a ratio of the first thickness to the second thickness is in a range from about 0.02 to about 0.2.

10. The semiconductor device structure as claimed in claim 1 , further comprising:
a conductive feature electrically connected to the second electrode, wherein a bottommost surface of the conductive feature is vertically between the topmost surface of the second electrode and a top of the protective element.

11. A semiconductor device structure, comprising:
a substrate;
a data storage element over the substrate, wherein the data storage element has a lower portion and an upper portion, the data storage element has a surface connecting a first sidewall of the lower portion and a second sidewall of the upper portion, the first sidewall and the surface have different slopes, and the second sidewall and the surface have different slopes;
a first electrode electrically connected to the data storage element;
a second electrode electrically connected to the data storage element;
an ion diffusion barrier layer between the data storage element and the second electrode, wherein the ion diffusion barrier layer is spaced apart from the second electrode by a metal layer; and
a protective element extending upwards from the surface of the data storage element to a height level above a top of the ion diffusion barrier layer and a topmost surface of the second electrode, wherein the protective element extends along a sidewall of the ion diffusion barrier layer.

12. The semiconductor device structure as claimed in claim 11 , wherein the lower portion is wider than the upper portion.

13. The semiconductor device structure as claimed in claim 11 , wherein the first electrode is wider than the second electrode.

14. The semiconductor device structure as claimed in claim 11 , wherein the protective element is in contact with the surface and the second sidewall of the data storage element.

15. The semiconductor device structure as claimed in claim 11 , further comprising:
a protective layer extending along edges of the first electrode, the data storage element, and the protective element, wherein the protective layer is spaced apart from the second electrode; and
a dielectric layer covering the protective layer.

16. A semiconductor device structure, comprising:
a substrate;
a lower electrode over the substrate;
a resistance variable element over the lower electrode, wherein the resistance variable element has a lower portion and an upper portion, the lower portion is wider than the upper portion, and the lower portion laterally protrudes from an edge of the upper portion;
an upper electrode over the resistance variable element;
an ion diffusion barrier layer between the resistance variable element and the upper electrode, wherein the ion diffusion barrier layer is spaced apart from the upper electrode by a capping layer;
a protective element extending upwards from a first top of the lower portion of the resistance variable element to surpass a second top of the upper portion of the resistance variable element;
a dielectric layer covering the protective element and the upper electrode; and
a conductive feature laterally extending over a top of the dielectric layer and extending into the dielectric layer to be electrically connected to the upper electrode, wherein a top of the protective element is between a topmost surface of the upper electrode and a top of the conductive feature.

17. The semiconductor device structure as claimed in claim 16 , wherein the protective element extends along edges of the resistance variable element and the upper electrode, and the protective element gradually shrinks along a direction from a bottom of the protective element towards the top of the protective element.

18. The semiconductor device structure as claimed in claim 16 , wherein the protective element is in direct contact with the resistance variable element.

19. The semiconductor device structure as claimed in claim 16 , wherein the lower portion of the resistance variable element is as wide as the lower electrode, and the upper portion of the resistance variable element is as wide as the upper electrode.

20. The semiconductor device structure as claimed in claim 16 , wherein a bottommost surface of the resistance variable element is closer to the substrate than a topmost surface of the lower electrode.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Trinh Hai-Dang
• Lin Hsing-Lien
• Tsai Cheng-Yuan

Classifications

• H10N70/8833

  Binary metal oxides, e.g. TaOx · CPC title

• H10N70/841

  Electrodes · CPC title

• H10N70/826

  adapted for essentially vertical current flow, e.g. sandwich or pillar type devices · CPC title

• H10N70/801 Primary

  Constructional details of multistable switching devices · CPC title

• H10N70/245

  the species being metal cations, e.g. programmable metallization cells · CPC title