Capacitor structure and method of making the same

Patent metadata

Field	Value
Publication number	US-12336201-B2
Application number	US-202117346435-A
Country	US
Kind code	B2
Filing date	Jun 14, 2021
Priority date	Jan 29, 2015
Publication date	Jun 17, 2025
Grant date	Jun 17, 2025

Abstract

A structure includes a semiconductor substrate, a conductor-insulator-conductor capacitor. The conductor-insulator-conductor capacitor is disposed on the semiconductor substrate and includes a first conductor, a nitrogenous dielectric layer and a second conductor. The nitrogenous dielectric layer is disposed on the first conductor and the second conductor is disposed on the nitrogenous dielectric layer.

First claim

What is claimed is:

1. A structure comprising:
a semiconductor substrate;
a conductor-insulator-conductor capacitor over the semiconductor substrate, comprising:
a first conductor, wherein:
there is no physical interface between a bottom surface of the first conductor and a top surface of the first conductor, and
a via hole is defined by the first conductor that extends from the top surface of the first conductor toward the bottom surface of the first conductor but does not extend to the bottom surface of the first conductor;

a dielectric layer over the first conductor and in contact with the top surface of the first conductor, wherein the dielectric layer does not contain tantalum;
a first nitrogenous film over the dielectric layer and in contact with the dielectric layer;
a first blocking film over the first nitrogenous film and directly contacting the first nitrogenous film, wherein the first blocking film comprises titanium nitride and has a uniform composition;
a second nitrogenous film over the first blocking film and directly contacting the first blocking film, wherein the second nitrogenous film has a uniform composition;
a second blocking film over the second nitrogenous film and directly contacting the second nitrogenous film, wherein the second blocking film comprises tantalum nitride and has a uniform composition; and
a second conductor over the second blocking nitrogenous film; and

an upper layer contacting a first sidewall of the dielectric layer, a second sidewall of the dielectric layer, and a top surface of the second conductor extending between the first sidewall and the second sidewall.

2. The structure according to claim 1 , wherein the first conductor is in contact with the semiconductor substrate.

3. The structure according to claim 1 , wherein the conductor-insulator-conductor capacitor comprises:
a third nitrogenous film between the second blocking film and the second conductor.

4. The structure according to claim 1 , wherein the upper layer contacts a sidewall of the second conductor, a sidewall of the second blocking film, a sidewall of the first blocking film, and a sidewall of the first nitrogenous film.

5. The structure according to claim 1 , wherein the dielectric layer is in direct contact with the top surface of the first conductor.

6. The structure according to claim 1 , wherein the bottom surface of the first conductor is in direct contact with the semiconductor substrate.

7. A structure comprising:
a semiconductor substrate;
a conductor-insulator-conductor capacitor disposed over the semiconductor substrate, comprising:
a first conductor;
a dielectric layer over the first conductor;
a first nitrogenous film over the dielectric layer and in contact with the dielectric layer;
a first blocking film over the first nitrogenous film and directly contacting the first nitrogenous film, wherein the first blocking film comprises titanium nitride and has a uniform composition;
a second nitrogenous film over the first blocking film and directly contacting the first blocking film, wherein the second nitrogenous film has a uniform composition;
a second blocking film over the second nitrogenous film and directly contacting the second nitrogenous film, wherein the second blocking film comprises tantalum nitride and has a uniform composition; and
a second conductor over the second blocking film; and

an upper layer extended uninterruptedly from a top surface of the second conductor to a top surface the dielectric layer and contacts the top surface of the second conductor and the top surface the dielectric layer.

8. The structure according to claim 7 , wherein the conductor-insulator-conductor capacitor comprises:
a third nitrogenous film between the second blocking film and the second conductor.

9. The structure according to claim 7 , wherein the upper layer contacts a sidewall of the second conductor, a sidewall of the second blocking film, a sidewall of the first blocking film, a sidewall of the first nitrogenous film, and a sidewall of the dielectric layer.

10. The structure of claim 7 , wherein the upper layer contacts a first sidewall of the dielectric layer and a second sidewall of the dielectric layer.

11. The structure of claim 10 , wherein the top surface of the second conductor extends between the first sidewall and the second sidewall.

12. The structure of claim 7 , wherein the dielectric layer does not contain tantalum.

13. The structure of claim 7 , wherein there is no physical interface between a bottom surface of the first conductor and a top surface of the first conductor.

14. The structure of claim 7 , wherein a via hole is defined by the first conductor that extends from a top surface of the first conductor toward a bottom surface of the first conductor but does not extend to the bottom surface of the first conductor.

15. The structure according to claim 7 , wherein the dielectric layer is in direct contact with a top surface of the first conductor.

16. The structure according to claim 7 , wherein a bottom surface of the first conductor is in direct contact with the semiconductor substrate.

17. The structure according to claim 7 , wherein the first conductor has a uniform composition.

18. A structure comprising:
a semiconductor substrate; and
a conductor-insulator-conductor capacitor disposed over the semiconductor substrate, comprising:
a first conductor having a uniform composition, wherein a bottom surface of the first conductor is in direct contact with the semiconductor substrate, and there is no physical interface between the bottom surface of the first conductor and a top surface of the first conductor;
a dielectric layer over the first conductor and in direct contact with the top surface of the first conductor;
a first nitrogenous film over the dielectric layer and in contact with the dielectric layer;
a first blocking film over the first nitrogenous film and directly contacting the first nitrogenous film, wherein the first blocking film comprises titanium nitride and has a uniform composition;
a second nitrogenous film over the first blocking film and directly contacting the first blocking film, wherein the second nitrogenous film has a uniform composition;
a second blocking film over the second nitrogenous film and directly contacting the second nitrogenous film, wherein the second blocking film comprises tantalum nitride and has a uniform composition;
a third nitrogenous film over the second blocking film; and
a second conductor over the third nitrogenous film and in contact with the third nitrogenous film.

19. The structure of claim 18 , wherein the dielectric layer does not contain tantalum.

20. The structure of claim 18 , wherein the second conductor has a first thickness at a first position and a second thickness less than the first thickness at a second position.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Huang Jian-Shiou
• Tsai Chia-Shiung
• Tsai Cheng-Yuan
• Lin Hsing-Lien
• Chang Yao-Wen

Classifications

• H10P14/6318

  Formation by simultaneous oxidation and nitridation · CPC title

• H10P14/6316

  Formation by nitridation, e.g. nitridation of the substrate · CPC title

• H10D1/68 Primary

  Capacitors having no potential barriers · CPC title

• H10B63/22

  of the metal-insulator-metal type · CPC title

• H10D1/696 Primary

  comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688) · CPC title