Methods of forming semiconductor devices
US-12563818-B2 · Feb 24, 2026 · US
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Lee Chen-Ming patents
Lee Chen-Ming is listed as an inventor on 266 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Lee Chen-Ming |
| Total patents | 266 |
| First publication | Aug 27, 2015 |
| Latest publication | Feb 24, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Semiconductor device and manufacturing method thereof
US-2026047196-A1 · Feb 12, 2026 · US
Semiconductor devices with backside via and methods thereof
US-12550407-B2 · Feb 10, 2026 · US
Metal gate structure cutting process
US-12527071-B2 · Jan 13, 2026 · US
Isolation Structures
US-2026013206-A1 · Jan 8, 2026 · US
Semiconductor device contact structures and methods of fabricating thereof
US-12507459-B2 · Dec 23, 2025 · US
Method of forming backside vias
US-2025386545-A1 · Dec 18, 2025 · US
Semiconductor structure
US-2025366046-A1 · Nov 27, 2025 · US
Methods For Reducing Contact Depth Variation In Semiconductor Fabrication
US-2025357210-A1 · Nov 20, 2025 · US
Backside Via and Dual Side Power Rail For Epitaxial Source/Drain Structure
US-2025359285-A1 · Nov 20, 2025 · US
Recent patents
Latest publications not already listed above.
Disposable Hard Mask for Interconnect Formation
US-2025359137-A1 · Nov 20, 2025 · US
Backside contact resistance reduction
US-2025349617-A1 · Nov 13, 2025 · US
Semiconductor devices with reduced leakage current and methods of forming the same
US-2025351521-A1 · Nov 13, 2025 · US
Contact resistance reduction for transistors
US-2025349546-A1 · Nov 13, 2025 · US
Overhanging source/drain contact
US-2025344442-A1 · Nov 6, 2025 · US
Semiconductor structure and method for manufacturing the same
US-12464774-B2 · Nov 4, 2025 · US
Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the same
US-12464806-B2 · Nov 4, 2025 · US
Semiconductor structures with dual side power delivery
US-2025329649-A1 · Oct 23, 2025 · US
Silicide backside contact
US-2025324720-A1 · Oct 16, 2025 · US
Contact profile optimization for ic device performance improvement
US-2025318180-A1 · Oct 9, 2025 · US
Isolation structures
US-12439678-B2 · Oct 7, 2025 · US
Methods for reducing contact depth variation in semiconductor fabrication
US-12438049-B2 · Oct 7, 2025 · US
Isolation Structure And A Self-Aligned Capping Layer Formed Thereon
US-2025308984-A1 · Oct 2, 2025 · US
Contact profile optimization for IC device performance improvement
US-12414321-B2 · Sep 9, 2025 · US
Semiconductor device with dual silicide structure and methods thereof
US-2025267921-A1 · Aug 21, 2025 · US
Epitaxial Source/Drain Structures for Multigate Devices and Methods of Fabricating Thereof
US-2025254930-A1 · Aug 7, 2025 · US
Methods of forming air spacers in semicondutor devices
US-2025248075-A1 · Jul 31, 2025 · US
Silicide backside contact
US-12376360-B2 · Jul 29, 2025 · US
Feedthrough via with reduced resistance for direct connection to backside metals
US-2025226262-A1 · Jul 10, 2025 · US
Semiconductor devices and methods thereof with selectively formed isolation layers
US-2025201719-A1 · Jun 19, 2025 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 274 |
| Taiwan Semiconductor Mfg | 4 |
| Lin Che Hsien | 2 |
| Chu Che Hsien | 2 |
| Lu Ko Yen | 2 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D84/038 | 218 |
| H10D30/024 | 169 |
| H10D30/6219 | 153 |
| H10D30/62 | 138 |
| H10D84/0158 | 138 |