Structure and method for random code generation
US-11907685-B2 · Feb 20, 2024 · US
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Jaeger Daniel patents
Jaeger Daniel is listed as an inventor on 36 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Jaeger Daniel |
| Total patents | 36 |
| First publication | Mar 7, 2017 |
| Latest publication | Feb 20, 2024 |
Notable patents
Publications ranked by popularity score, then publication date.
Structure and method for random code generation
US-2021141610-A1 · May 13, 2021 · US
Source/drain contact depth control
US-10991796-B2 · Apr 27, 2021 · US
Epitaxial structures of a semiconductor device having a wide gate pitch
US-10971625-B2 · Apr 6, 2021 · US
Cap structure
US-10930549-B2 · Feb 23, 2021 · US
Epitaxial structures of a semiconductor device having a wide gate pitch
US-2020411689-A1 · Dec 31, 2020 · US
Field-effect transistors with self-aligned and non-self-aligned contact openings
US-10833160-B1 · Nov 10, 2020 · US
Field-effect transistors with self-aligned and non-self-aligned contact openings
US-2020335591-A1 · Oct 22, 2020 · US
Methods of forming gate structures for transistor devices on an IC product
US-10755982-B1 · Aug 25, 2020 · US
Source/drain contact depth control
US-2020203480-A1 · Jun 25, 2020 · US
Recent patents
Latest publications not already listed above.
Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devices
US-10644156-B2 · May 5, 2020 · US
Cap structure
US-2020013672-A1 · Jan 9, 2020 · US
Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device
US-10522639-B2 · Dec 31, 2019 · US
Cap structure
US-10460986-B2 · Oct 29, 2019 · US
Methods, apparatus and system for stringer defect reduction in a trench cut region of a finfet device
US-2019326408-A1 · Oct 24, 2019 · US
Contacts formed with self-aligned cuts
US-2019295898-A1 · Sep 26, 2019 · US
Methods, apparatus and system for stringer defect reduction in a trench cut region of a finFET device
US-10418455-B2 · Sep 17, 2019 · US
Methods, apparatus, and system for reducing gate cut gouging and/or gate height loss in semiconductor devices
US-2019280114-A1 · Sep 12, 2019 · US
Composite contact etch stop layer
US-10388562-B2 · Aug 20, 2019 · US
Contacts formed with self-aligned cuts
US-10373875-B1 · Aug 6, 2019 · US
Cap structure
US-2019237363-A1 · Aug 1, 2019 · US
Methods, apparatus and system for self-aligned metal hard masks
US-10340142-B1 · Jul 2, 2019 · US
Methods, apparatus and system for providing a pre-RMG replacement metal contact for a finFET device
US-10325819-B1 · Jun 18, 2019 · US
Methods, apparatus and system for replacement contact for a finFET device
US-10269654-B1 · Apr 23, 2019 · US
Methods of forming a resistor structure between adjacent transistor gates on an integrated circuit product and the resulting devices
US-10249616-B2 · Apr 2, 2019 · US
Methods, apparatus and system for stringer defect reduction in a trench cut region of a finfet device
US-2019097015-A1 · Mar 28, 2019 · US
Composite contact etch stop layer
US-2019057899-A1 · Feb 21, 2019 · US
Methods, apparatus, and system for reducing step height difference in semiconductor devices
US-10204797-B1 · Feb 12, 2019 · US
Methods of forming a resistor structure between adjacent transistor gates on an integrated circuit product and the resulting devices
US-2018366461-A1 · Dec 20, 2018 · US
Method and system for constructing FINFET devices having a super steep retrograde well
US-10062612-B2 · Aug 28, 2018 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Globalfoundries Inc | 32 |
| Globalfoundries Us Inc | 5 |
| Globalfoudries Inc | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D84/038 | 25 |
| H10D64/017 | 20 |
| H10D30/024 | 18 |
| H10D30/62 | 16 |
| H10D84/0158 | 14 |