Cap structure

Patent metadata

Field	Value
Publication number	US-10930549-B2
Application number	US-201916573209-A
Country	US
Kind code	B2
Filing date	Sep 17, 2019
Priority date	Jan 29, 2018
Publication date	Feb 23, 2021
Grant date	Feb 23, 2021

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.

First claim

What is claimed:

1. A method comprising:
forming a gate structure composed of conductive gate material;
forming a first capping material on the conductive gate material;
forming sidewall spacers on the gate structure and the first capping material;
recessing the first capping material below the sidewall spacers; and
forming a second capping material on the first capping material, the second capping material overhanging the sidewall spacers; and
forming an etch stop layer on the sidewall spacers, on a side opposing conductive gate material of the gate structure, the sidewall spacers and the etch stop layer being formed only on sides of the gate structure and not extending underneath the conductive gate material of the gate structure.

2. The method of claim 1 , further comprising planarizing or etching back the second capping material to overhang the sidewall spacers, and forming a T-shaped capping structure composed of the first capping material and the second capping material.

3. The method of claim 2 , wherein the first capping material is nitride material and the second capping material is an etch resistant material that is a different material than the nitride material.

4. The method of claim 1 , wherein the first capping material is formed directly on the conductive gate material and comprises a recessed portion between the sidewall spacers on the gate structure.

5. The method of claim 4 , wherein the second capping material is formed within the recessed portion of the first capping material and extends over and in direct contact with a top surface of the sidewall spacers on the gate structure.

6. The method of claim 5 , wherein the second capping material is T-shaped and the second capping material is a top material that is resistant to etch chemistries and which overhangs over the sidewall spacers.

7. The method of claim 6 , wherein the first capping material directly contacts the conductive gate material and is located between the sidewall spacers.

8. The method of claim 1 , further comprising forming contacts adjacent to the gate structure, the contacts being separated from the conductive gate material of the gate structure by at least the sidewall spacers and the second capping material which overhangs the sidewall spacers.

9. The method of claim 1 , further comprising planarizing the second capping material and, wherein:
the sidewall spacers and a portion of the first capping material are planarized with one another,
the recessed portion of the first capping material is below a top surface of the etch stop layer and the sidewall spacers, and
the second capping layer is directly on the top surface of the etch stop layer and the sidewall spacers and directly contacting a sidewall of the interlevel dielectric material.

10. The method of claim 1 , wherein the sidewall spacers are formed in contact with the conductive gate material and the etch stop layer is formed in contact with the sidewall spacers, and separated from the conductive gate material by the sidewall spacers.

11. The method of claim 1 , wherein the etch stop layer is not recessed, and the second capping material is deposited on and contacts an inner sidewall of the etch stop layer and a top surface of the sidewall spacers.

12. A method, comprising:
forming a gate structure composed of conductive gate material;
forming sidewall spacers on the gate structure and having a top surface extending above a top surface of the conductor material;
forming an etch stop layer on the sidewall spacers, on a side opposing the conductive gate material; and
forming a T-shaped bilayer cap on the conductive gate material, the T-shaped bilayer cap comprising a first capping material positioned within the sidewall spacers and having a recessed portion lower than a top surface of the sidewall spacers and a second capping material within the recessed portion and further directly contacting and overhanging the sidewall spacers,
wherein the etch stop layer is not lowered, and the second capping material is deposited on and contacts an inner sidewall of the etch stop layer and a top surface of the sidewall spacers.

13. The method of claim 12 , wherein the forming of the T-shaped bilayer cap comprises:
forming the first capping material between the sidewall spacers;
recessing the first capping material between the sidewall spacers such that the recessed portion is lower than the top surface of the sidewall spacers;
lowering the sidewall spacers to a same level as the first capping material, which enlarges the recessed portion; and
forming the second capping material within the enlarged recessed portion and overhanging the sidewall spacers.

14. The method of claim 12 , wherein the sidewall spacers are formed in contact with the conductive gate material of the gate structure and the etch stop layer is formed in contact with the sidewall spacers, and separated from the conductive gate material by the sidewall spacers.

15. A method, comprising:
forming a gate structure composed of conductive gate material;
forming sidewall spacers on the gate structure and having a top surface extending above a top surface of the conductor material;
forming an etch stop layer on the sidewall spacers, on a side opposing the conductive gate material; and
forming a T-shaped bilayer cap on the conductive gate material, the T-shaped bilayer cap comprising a first capping material positioned within the sidewall spacers and having a recessed portion lower than a top surface of the sidewall spacers and a second capping material within the recessed portion and further directly contacting and overhanging the sidewall spacers,
wherein the sidewall spacers and the etch stop layer are formed only on sides of the gate structure and do not extend underneath the conductive gate material of the gate structure.

Assignees

• Globalfoundries Inc
• Globalfoundries Us Inc

Inventors

• Gao Jinsheng
• Jaeger Daniel
• Chang Chih-Chiang
• Aquilino Michael
• Carpenter Patrick
• Hong Junsic
• Rutkowski Mitchell
• Huang Haigou
• Cao Huy

Classifications

• H10P50/283

  by chemical means · CPC title

• H10D64/01354

  passivation or protection of the electrode, e.g. using re-oxidation · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/069

  by forming self-aligned vias or self-aligned contact plugs · CPC title

• H10W20/077 Primary

  on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title