Integrated circuit devices
US-2026101495-A1 · Apr 9, 2026 · US
This page is not indexed by search engines while we improve data quality.
Ha Daewon patents
Ha Daewon is listed as an inventor on 124 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Ha Daewon |
| Total patents | 124 |
| First publication | Sep 8, 2015 |
| Latest publication | Apr 9, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Ferroelectric memory device
US-12593453-B2 · Mar 31, 2026 · US
Semiconductor devices
US-2026089973-A1 · Mar 26, 2026 · US
Semiconductor devices including separation structure
US-12588269-B2 · Mar 24, 2026 · US
Three-dimensional semiconductor device and method of fabricating the same
US-2026082702-A1 · Mar 19, 2026 · US
Disturb mitigation scheme for ferroelectric field-effect transistors
US-2026073964-A1 · Mar 12, 2026 · US
Three-dimensional semiconductor device and method of fabricating the same
US-2026068278-A1 · Mar 5, 2026 · US
Semiconductor devices
US-12563738-B2 · Feb 24, 2026 · US
Semiconductor device
US-2026047060-A1 · Feb 12, 2026 · US
Semiconductor device including semiconductor patterns having varied thicknesses
US-12550372-B2 · Feb 10, 2026 · US
Recent patents
Latest publications not already listed above.
Nanosheet transistor devices and related fabrication methods
US-2026040906-A1 · Feb 5, 2026 · US
Semiconductor device
US-12543301-B2 · Feb 3, 2026 · US
Semiconductor device
US-2026013109-A1 · Jan 8, 2026 · US
Three-dimensional semiconductor device and method of fabricating the same
US-12513996-B2 · Dec 30, 2025 · US
Integrated circuit devices having vertically extending gate lines with wrap-around channel layers
US-2025374550-A1 · Dec 4, 2025 · US
Three-dimensional semiconductor device and method of fabricating the same
US-12490494-B2 · Dec 2, 2025 · US
Semiconductor device
US-2025364415-A1 · Nov 27, 2025 · US
Semiconductor devices and methods of fabricating the same
US-2025338565-A1 · Oct 30, 2025 · US
Nanosheet transistor devices and related fabrication methods
US-12456647-B2 · Oct 28, 2025 · US
Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods
US-2025311304-A1 · Oct 2, 2025 · US
Semiconductor devices and methods of fabricating the same
US-2025294816-A1 · Sep 18, 2025 · US
Protection diode and semiconductor device having the same
US-2025255008-A1 · Aug 7, 2025 · US
Semiconductor device
US-2025248110-A1 · Jul 31, 2025 · US
Memory device
US-12376285-B2 · Jul 29, 2025 · US
Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods
US-12356665-B2 · Jul 8, 2025 · US
Semiconductor device
US-2025220904-A1 · Jul 3, 2025 · US
Semiconductor device
US-2025204038-A1 · Jun 19, 2025 · US
Ferroelectric gate stack with tunnel dielectric insert for nand applications
US-2025194095-A1 · Jun 12, 2025 · US
Semiconductor devices and methods of fabricating the same
US-12328909-B2 · Jun 10, 2025 · US
Semiconductor device
US-12317580-B2 · May 27, 2025 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Samsung Electronics Co Ltd | 123 |
| Georgia Tech Res Inst | 2 |
| Park Sungil | 1 |
| Kim Munhyeon | 1 |
| Kim Woonggi | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/6757 | 82 |
| H10D30/6735 | 81 |
| H10D64/017 | 72 |
| H10D62/121 | 69 |
| H10D30/43 | 60 |