Oxide-based resistive memory having a plasma-exposed bottom electrode
US-12225833-B2 · Feb 11, 2025 · US
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De Souza Joel P patents
De Souza Joel P is listed as an inventor on 205 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | De Souza Joel P |
| Total patents | 205 |
| First publication | Feb 19, 2015 |
| Latest publication | Feb 11, 2025 |
Notable patents
Publications ranked by popularity score, then publication date.
Solid state lithium ion rechargeable battery
US-12068477-B2 · Aug 20, 2024 · US
Phase-change memory (PCM) including liner reducing resistance drift
US-11805711-B2 · Oct 31, 2023 · US
Oxide-based resistive memory having a plasma-exposed bottom electrode
US-2023263077-A1 · Aug 17, 2023 · US
Low resistance composite silicon-based electrode
US-11721801-B2 · Aug 8, 2023 · US
Oxide-based resistive memory having a plasma-exposed bottom electrode
US-11647680-B2 · May 9, 2023 · US
Battery-based neural network weights
US-11588210-B2 · Feb 21, 2023 · US
Leakage-free implantation-free ETSOI transistors
US-11502171-B2 · Nov 15, 2022 · US
Lithium drifted thin film transistors for neuromorphic computing
US-11444207-B2 · Sep 13, 2022 · US
Energy storage device containing a pre-lithiated silicon based anode and a carbon nanotube based cathode
US-11437614-B2 · Sep 6, 2022 · US
Recent patents
Latest publications not already listed above.
Porous silicon anode for rechargeable metal halide battery
US-11367863-B2 · Jun 21, 2022 · US
Lithium ion energy storage device containing a vapor deposited iodine interfacial layer
US-11335899-B2 · May 17, 2022 · US
Molten ion conductive salt/silicon interface for decreased interfacial resistance
US-11309585-B2 · Apr 19, 2022 · US
Phase-change memory (pcm) including liner reducing resistance drift
US-2022102626-A1 · Mar 31, 2022 · US
Low reistance composite silicon-based electrode
US-2022052316-A1 · Feb 17, 2022 · US
Silicon substrate containing integrated porous silicon electrodes for energy storage devices
US-11233288-B2 · Jan 25, 2022 · US
Polymer and molten ion conductive salt and silicon interface for decreased interfacial resistance
US-11205800-B2 · Dec 21, 2021 · US
Oxide-based resistive memory having a plasma-exposed bottom electrode
US-2021391536-A1 · Dec 16, 2021 · US
MOSFET with ultra low drain leakage
US-11201212-B2 · Dec 14, 2021 · US
FinFET resistive switching device having interstitial charged particles for memory and computational applications
US-11201244-B2 · Dec 14, 2021 · US
Phase change material with reduced reset state resistance drift
US-11195999-B2 · Dec 7, 2021 · US
Battery structure with stable voltage for neuromorphic computing
US-11133492-B2 · Sep 28, 2021 · US
Evaporated ion conductive layer for decreased interfacial resistance/impedance at silicon based electrode interface
US-11127987-B2 · Sep 21, 2021 · US
Phase-change memory with no drift
US-11121319-B2 · Sep 14, 2021 · US
Battery-based neural network weights
US-11106966-B2 · Aug 31, 2021 · US
High-capacity rechargeable batteries
US-11081731-B2 · Aug 3, 2021 · US
Phase-change memory with no drift
US-2021184118-A1 · Jun 17, 2021 · US
Energy storage device containing a pre-lithiated silicon based anode and a carbon nanotube based cathode
US-2021175495-A1 · Jun 10, 2021 · US
Battery-based neural network weights
US-11023802-B2 · Jun 1, 2021 · US
Leakage-free implantation-free etsoi transistors
US-2021151564-A1 · May 20, 2021 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| IBM | 199 |
| Globalfoundries Inc | 7 |
| De Souza Joel P | 2 |
| Sadana Devendra K | 2 |
| Hovel Harold J | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| Y02E60/10 | 69 |
| H01M10/0525 | 57 |
| Y02P70/50 | 48 |
| H10D62/151 | 44 |
| H01M10/0562 | 37 |