Process for deposition of titanium oxynitride for use in integrated circuit fabrication
US-9523148-B1 · Dec 20, 2016 · US
Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence)
Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence) · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C23C16/4554 |
| Official title | {Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence)} |
| Display label | Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence) |
| Total patents | 539 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 31 |
| 2016 | 32 |
| 2017 | 36 |
| 2018 | 45 |
| 2019 | 45 |
| 2020 | 57 |
| 2021 | 45 |
| 2022 | 80 |
| 2023 | 46 |
| 2024 | 50 |
| 2025 | 65 |
| 2026 | 7 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Ion beam activated directional deposition
US-9520284-B1 · Dec 13, 2016 · US
Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and program
US-9514935-B2 · Dec 6, 2016 · US
Inhibitor plasma mediated atomic layer deposition for seamless feature fill
US-2016329238-A1 · Nov 10, 2016 · US
Method and apparatus of forming carbon-containing silicon film
US-9490122-B2 · Nov 8, 2016 · US
Deposition Of Si-H Free Silicon Nitride
US-2016307748-A1 · Oct 20, 2016 · US
Film deposition apparatus and film deposition method
US-9466483-B2 · Oct 11, 2016 · US
Soft landing nanolaminates for advanced patterning
US-2016293418-A1 · Oct 6, 2016 · US
Inhibitor plasma mediated atomic layer deposition for seamless feature fill
US-9425078-B2 · Aug 23, 2016 · US
Apparatuses and methods for depositing sic/sicn films via cross-metathesis reactions with organometallic co-reactants
US-2016233081-A1 · Aug 11, 2016 · US
Methods of growing thin films at low temperatures using electron stimulated desorption (esd)
US-2016218004-A1 · Jul 28, 2016 · US
Soft landing nanolaminates for advanced patterning
US-9390909-B2 · Jul 12, 2016 · US
Method of manufacturing semiconductor device
US-2016196980-A1 · Jul 7, 2016 · US
Method of selective gas phase film deposition on a substrate
US-2016172189-A1 · Jun 16, 2016 · US
Hermetic CVD-cap with improved step coverage in high aspect ratio structures
US-9362111-B2 · Jun 7, 2016 · US
Methods for depositing films on sensitive substrates
US-2016155676-A1 · Jun 2, 2016 · US
Sub-saturated atomic layer deposition and conformal film deposition
US-9355839-B2 · May 31, 2016 · US
Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants
US-9343296-B2 · May 17, 2016 · US
Method for forming multi-element thin film constituted by at least five elements by PEALD
US-9343297-B1 · May 17, 2016 · US
Layer-by-layer deposition of carbon-doped oxide films through cyclical silylation
US-9330900-B2 · May 3, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C23C16/4554?
- CPC C23C16/4554 is the Cooperative Patent Classification code for “Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence).”
- How many patents are filed under CPC C23C16/4554 (Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence))?
- Our database includes 539 publications tagged with this CPC code.
- Is patent activity under CPC C23C16/4554 growing?
- Publication counts under this code: 50 in 2024 vs 65 in 2025 (latest complete years).