Method and apparatus of forming carbon-containing silicon film

Patent metadata

Field	Value
Publication number	US-9490122-B2
Application number	US-201514629666-A
Country	US
Kind code	B2
Filing date	Feb 24, 2015
Priority date	Feb 25, 2014
Publication date	Nov 8, 2016
Grant date	Nov 8, 2016

Abstract

A method of forming a carbon-containing silicon film includes: adsorbing a silicon source on a workpiece by supplying a silicon source gas containing at least one chlorine group into a reaction chamber accommodating the workpiece and activating the supplied silicon source gas to react the activated silicon source gas with the workpiece; and removing chlorine from the adsorbed silicon source containing chlorine by supplying an alkyl metal gas into the reaction chamber and activating the supplied alkyl metal gas to react the activated alkyl metal gas with the adsorbed silicon source. Adsorbing a silicon source and removing chlorine are sequentially repeated plural times.

First claim

What is claimed is:

1. A method of forming a carbon-containing silicon film, comprising:
adsorbing a silicon source on a workpiece by supplying a silicon source gas containing at least one chlorine group into a reaction chamber accommodating the workpiece and activating the supplied silicon source gas to react the activated silicon source gas with the workpiece;
removing chlorine from the adsorbed silicon source containing chlorine by supplying an alkyl metal gas into the reaction chamber and activating the alkyl metal gas to react the activated alkyl metal gas with the adsorbed silicon source; and
incorporating oxygen into the adsorbed silicon source by supplying oxygen into the reaction chamber and activating the supplied oxygen to react the activated oxygen with the adsorbed silicon source after removing chlorine,
wherein adsorbing a silicon source, removing chlorine, and incorporating oxygen are sequentially repeated plural times.

2. The method of claim 1 , wherein the alkyl metal gas includes trimethyl boron, triethyl boron, tripropyl boron, or triisopropyl boron.

3. The method of claim 1 , wherein the silicon source gas includes dichlorosilane, trichlorosilane, monochlorosilane, tetrachlorosilane, hexachlorodisilane, or octachlorotrisilane.

4. The method of claim 1 , wherein, in removing chlorine, an internal temperature of the reaction chamber is set to 200 degrees C. to 600 degrees C.

5. The method of claim 1 , further comprising plasma-treating configured to further remove chlorine from the adsorbed silicon source containing chlorine by supplying plasma-activated hydrogen gas into the reaction chamber after removing chlorine,
wherein adsorbing a silicon source, removing chlorine, and plasma-treating are sequentially repeated plural times.

6. The method of claim 1 , further comprising: incorporating nitrogen into the adsorbed silicon source by supplying nitrogen into the reaction chamber and activating the supplied nitrogen to react the activated nitrogen with the adsorbed silicon source after incorporating oxygen,
wherein adsorbing a silicon source, removing chlorine, incorporating oxygen, and incorporating nitrogen are sequentially repeated plural times.

Assignees

• Tokyo Electron Ltd

Inventors

• Kakimoto Akinobu

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3408

  Silicon carbide · CPC title

• H10P14/24 Primary

  using chemical vapour deposition [CVD] · CPC title

• C23C16/45546

  specially adapted for a substrate stack in the ALD reactor · CPC title

• C23C16/4554 Primary

  Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence) · CPC title