Process for deposition of titanium oxynitride for use in integrated circuit fabrication

Patent metadata

Field	Value
Publication number	US-9523148-B1
Application number	US-201514835465-A
Country	US
Kind code	B1
Filing date	Aug 25, 2015
Priority date	Aug 25, 2015
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication, such as in forming spacers in a pitch multiplication process. The process comprises contacting the substrate with a titanium reactant and removing excess titanium reactant and reaction byproducts, if any. The substrate is then contacted with a second reactant which comprises reactive species generated by plasma, wherein one of the reactive species comprises nitrogen. The second reactant and reaction byproducts, if any, are removed. The contacting and removing steps are repeated until a titanium oxynitride thin film of desired thickness has been formed.

First claim

What is claimed is:

1. A process for depositing a titanium oxynitride thin film in integrated circuit fabrication comprising:
contacting a substrate comprising silicon with a titanium reactant;
exposing the substrate to a purge gas and/or vacuum to remove excess titanium reactant and reaction byproducts, if any;
contacting the substrate with a second reactant, wherein the second reactant comprises a plurality of reactive species generated by plasma, wherein the plurality of reactive species comprises nitrogen and oxygen, and wherein a ratio of nitrogen reactive species to oxygen reactive species is from about 1:2 to about 250:1;
exposing the substrate to a purge gas and/or vacuum to remove excess second reactant and reaction byproducts, if any;
repeating the contacting and exposing steps until a titanium oxynitride thin film of desired thickness has been formed on the substrate comprising silicon, wherein the titanium oxynitride thin film comprises from about 0.05 at-% to about 30 at-% nitrogen.

2. The process of claim 1 , wherein the process is used to form spacers in an integrated circuit fabrication process.

3. The process of claim 1 , wherein the process is used to form spacers for use in a pitch multiplication process.

4. The process of claim 1 , wherein the titanium oxynitride film is substantially amorphous.

5. The process of claim 1 , wherein the substrate comprises a preexisting mask feature.

6. The process of claim 1 , wherein the titanium reactant comprises an alkylamine ligand.

7. The process of claim 1 , wherein the titanium reactant comprises Ti(NR I R II ) 4 , wherein R I and R II can be independently selected to be alkyl groups.

8. The process of claim 1 , wherein the second reactant comprises a nitrogen precursor and an oxygen precursor.

9. The process of claim 8 , wherein the nitrogen precursor comprises N 2 , NH 3 , or N 2 H 2 .

10. The process of claim 8 , wherein the oxygen precursor comprises O 2 .

11. The process of claim 1 , wherein the reactive species comprises nitrogen atoms, nitrogen ions, nitrogen radicals, or nitrogen plasma and oxygen atoms, oxygen radicals, or oxygen plasma.

12. The process of claim 1 , wherein deposition is carried out at a temperature of from about 70° C. to about 200° C.

13. The process of claim 1 , wherein the process is a plasma enhanced atomic layer deposition process.

14. A process for depositing a titanium oxynitride thin film, comprising at least one deposition cycle comprising:
alternately and sequentially contacting a substrate comprising silicon with a titanium reactant and a second reactant comprising a plurality of reactive species including nitrogen reactive species and oxygen reactive species, wherein a ratio of nitrogen reactive species to oxygen reactive species in the second reactant is from about 1:2 to about 250:1; and
wherein the deposition cycle is repeated two or more times to form the titanium oxynitride thin film on the substrate comprising silicon, wherein the titanium oxynitride thin film comprises from about 0.05 at-% to about 30 at-% nitrogen.

15. The process of claim 14 , wherein the process is used to form spacers in an integrated circuit fabrication process.

16. The process of claim 14 , wherein the titanium reactant has the formula Ti(NR I R II ) 4 , wherein R I and R II can be independently selected to be Me or Et.

17. The process of claim 14 , wherein the second reactant comprises a nitrogen precursor and an oxygen precursor.

18. The process of claim 14 , wherein the reactive species comprises nitrogen atoms, nitrogen ions, nitrogen radicals, or nitrogen plasma and oxygen atoms, oxygen radicals, or oxygen plasma.

19. The process of claim 14 , wherein the process is a plasma enhanced atomic layer deposition processes.

Assignees

• Asm Ip Holding Bv
• Asm Ip Holdings B V

Inventors

• Pore Viljami J
• Okura Seiji
• Suemori Hidemi

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title