Layer-by-layer deposition of carbon-doped oxide films through cyclical silylation

Patent metadata

Field	Value
Publication number	US-9330900-B2
Application number	US-201414653119-A
Country	US
Kind code	B2
Filing date	Feb 18, 2014
Priority date	Mar 14, 2013
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

Embodiments of the present invention generally relate to methods of forming carbon-doped oxide films. The methods generally include generating hydroxyl groups on a surface of the substrate using a plasma, and then performing silylation on the surface of the substrate. The hydroxyl groups on the surface of the substrate are then regenerated using a plasma in order to perform an additional silylation. Multiple plasma treatments and silylations may be performed to deposit a layer having a desired thickness.

First claim

I claim:

1. A method of depositing a carbon-doped silicon oxide film, comprising:
exposing a substrate to a first plasma treatment;
exposing the substrate to a water-containing gas to form hydroxyl groups on a surface of the substrate;
debonding water molecules from the surface of the substrate;
performing silylation on the surface of the substrate; and
regenerating the surface for additional silylation, the regeneration comprising:
exposing the substrate to a second plasma treatment; and
exposing the substrate to the water-containing gas to form hydroxyl groups on the surface of the substrate.

2. The method of claim 1 , wherein the regenerating further comprises debonding water molecules from the surface of the substrate.

3. The method of claim 1 , wherein exposing a substrate to a first plasma treatment includes exposing the substrate to a plasma formed from one or more of oxygen, ammonia, or carbon dioxide.

4. The method of claim 1 , wherein the water-containing gas is formed using a water vapor generator.

5. The method of claim 1 , wherein performing silylation on the surface of the substrate includes exposing the substrate to (dimethylamino)trimethylsilane.

6. The method of claim 1 , wherein the carbon-doped silicon oxide film is deposited on a low-k material.

7. The method of claim 6 , wherein the carbon-doped silicon oxide film functions a barrier layer.

8. The method of claim 7 , wherein the carbon-doped silicon oxide layer is formed to a thickness of about 10 angstroms to about 20 angstroms.

9. The method of claim 1 , wherein the performing silylation on the surface of the substrate and the regenerating the surface for additional silylation is performed cyclically for about 10 cycles to about 100 cycles.

10. The method of claim 1 , wherein performing silylation on the surface of the substrate includes exposing the substrate to bis(dimethylamino)dimethylsilane.

11. A method of forming a device on a substrate, comprising:
depositing a carbon-doped silicon oxide layer on a low k material, the carbon doped silicon oxide layer is deposited by cyclically performing the operations of:
(a) exposing the substrate to a plasma treatment;
(b) exposing the substrate to the water-containing gas to form hydroxyl groups; and
(c) performing a silylation reaction with the hydroxyl groups.

12. The method of claim 11 , wherein the device includes an exposed copper layer, and the formation of the carbon doped silicon oxide layer forms on the low k material at a greater rate than on the exposed copper layer.

13. The method of claim 12 , further comprising subsequently forming a barrier layer on the carbon-doped silicon oxide layer, the barrier formed by atomic layer deposition or physical layer deposition, wherein the barrier layer is a tantalum-containing or manganese-containing layer.

14. The method of claim 11 , wherein the plasma treatment includes exposing the substrate to a plasma formed from ammonia, the performing a silylation reaction with the hydroxyl groups includes exposing the substrate to (dimethylamino)trimethylsilane or bis(dimethylamino)dimethylsilane, the water-containing gas is formed using a water vapor generator, the low k material is a porous low k material.

15. The method of claim 11 , wherein the carbon-doped silicon oxide layer is formed to a thickness of about 10 angstroms to about 20 angstroms, and performing silylation on the surface of the substrate includes exposing the substrate to (dimethylamino)trimethylsilane.

Assignees

• Applied Materials Inc

Inventors

• Chan Kelvin

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6546

  to change the surface groups of the insulating materials · CPC title

• H10P14/6538

  by exposure to UV light · CPC title