Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and program

Patent metadata

Field	Value
Publication number	US-9514935-B2
Application number	US-201314388160-A
Country	US
Kind code	B2
Filing date	Mar 25, 2013
Priority date	Mar 28, 2012
Publication date	Dec 6, 2016
Grant date	Dec 6, 2016

Abstract

A method of manufacturing a semiconductor device is provided, which enables the film quality to be improved when the film is formed on a substrate at a low temperature, thus forming fine patterns. The method of manufacturing a semiconductor device includes: forming the film on a substrate by alternately supplying at least a source gas and a reactive gas to the substrate while maintaining the substrate at a first temperature by heating; and modifying the film by supplying a modification gas excited by plasma to the substrate with the film formed thereon while naturally cooling the substrate with the film formed thereon to a second temperature without heating the substrate, the second temperature being lower than the first temperature.

First claim

The invention claimed is:

1. A method of manufacturing a semiconductor device comprising:
forming a film on a substrate by alternately supplying at least a source gas and a reactive gas to the substrate while maintaining the substrate at a first temperature of 200° C. or less by heating; and
modifying the film and removing moisture from the film by supplying a nitrogen-containing modification gas excited by plasma to the substrate with the film formed thereon while naturally cooling the substrate with the film formed thereon to a second temperature without heating the substrate, the second temperature being lower than the first temperature.

2. The method according to claim 1 , wherein the second temperature is predetermined to be 40° C. and the method further comprises naturally cooling the substrate with the film formed thereon to a cooled temperature equal to or less than the second temperature.

3. The method according to claim 1 , wherein the modification gas comprises NH 3 gas.

4. The method according to claim 1 , wherein modifying the film comprises controlling a stress applied to the film by at least one of: (i) the second temperature; and (ii) a time period in which the modification gas excited by the plasma is supplied to the substrate.

5. The method according to claim 1 , wherein forming the film further comprises supplying a catalyst to the substrate simultaneously with at least one of the source gas and the reactive gas.

6. The method according to claim 1 , wherein forming the film further comprises supplying the catalyst to the substrate simultaneously with the source gas and the reactive gas.

7. A method of processing a substrate comprising:
forming a film on a substrate by alternately supplying at least a source gas and a reactive gas to the substrate while maintaining the substrate at a first temperature of 200° C. or less by heating; and
modifying the film and removing moisture from the film by supplying a nitrogen-containing modification gas excited by plasma to the substrate with the film formed thereon while naturally cooling the substrate with the film formed thereon to a second temperature without heating the substrate, the second temperature being lower than the first temperature.

Assignees

• Hitachi Int Electric Inc

Inventors

• Noda Takaaki
• Hanashima Takeo

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title