Deposition Of Si-H Free Silicon Nitride

Patent metadata

Field	Value
Publication number	US-2016307748-A1
Application number	US-201615133376-A
Country	US
Kind code	A1
Filing date	Apr 20, 2016
Priority date	Apr 20, 2015
Publication date	Oct 20, 2016
Grant date	—

Abstract

Methods for the deposition of SiN films comprising cyclical exposure of a substrate surface to a silicon halide comprising one or more of bromine and/or iodine halogens and a nitrogen-containing reactant. Some embodiments further comprise the incorporation of an argon plasma exposure prior to at least the first silicon halide exposure.

First claim

What is claimed is:

1 . A processing method comprising sequentially exposing a substrate surface to a silicon halide precursor and a nitrogen-containing reactant to form a silicon nitride film, the silicon halide precursor comprising one or more halides selected from bromine and iodine.

2 . The method of claim 1 , wherein the silicon halide precursor comprises one or more of SiBr 4 , SiI 4 , SiBr 4-x I x (where x=1 to 3) and a compound having the empirical formula Si y X 2y+2 (wherein y is greater than or equal to 2 and X is one or more of bromine and iodine).

3 . The method of claim 1 , wherein the silicon halide precursor comprises substantially no Si—H bonds.

4 . The method of claim 1 , wherein the silicon halide precursor comprises halides consisting essentially of bromine and iodine.

5 . The method of claim 1 , wherein the nitrogen-containing reactant comprises one or more of ammonia, nitrogen, nitrogen plasma or hydrazine.

6 . The method of claim 1 , wherein the silicon nitride film has a growth rate of less than about 1 g silicon halide/Å.

7 . The method of claim 1 , wherein the silicon nitride film has a wet etch rate ratio in dilute HF less than about 9.

8 . The method of claim 1 , wherein the silicon halide precursor is exposed to the substrate at a pressure less than about 1.5 Torr at about 420° C.

9 . The method of claim 8 , wherein the silicon nitride film grows at a rate greater than about 0.2 Å/cycle.

10 . The method of claim 1 , further comprising exposing the substrate surface to an argon plasma prior to deposition of the silicon nitride film.

11 . The method of claim 1 , wherein cyclical exposure comprises an argon plasma prior to exposure to the silicon halide precursor and the nitrogen-containing reactant.

12 . The method of claim 11 , wherein the silicon nitride film has a wet etch rate ratio in dilute HF of less than about 2.

13 . The method of claim 11 , wherein the substrate surface comprises at least one feature having a top and sidewall and the silicon nitride film has a conformality of greater than 85% (sidewall/top).

14 . The method of claim 1 , wherein the silicon nitride film is formed at a temperature less than about 500° C.

15 . A processing method comprising exposing a substrate surface to at least two deposition cycles, each deposition cycle comprising:
exposing a substrate surface to an argon plasma to form a treated substrate surface; exposing the treated substrate surface to a silicon halide precursor to form a silicon halide layer on the substrate surface, wherein the halogen atoms of the silicon halide precursor comprising substantially only halogen atoms selected from the group consisting of bromine, iodine and combinations thereof; and exposing the silicon halide layer to a nitrogen-containing reactant to form a silicon nitride film on the substrate surface.

16 . The processing method of claim 15 , wherein each cycle occurs at a temperature less than about 500° C.

17 . The processing method of claim 16 , further comprising repeating the cycle to form a silicon nitride film of a predetermined thickness.

18 . The method of claim 17 , wherein the silicon nitride film has a wet etch rate ratio in dilute HF of less than about 2.

19 . The method of claim 17 , wherein the substrate surface comprises at least one feature having a top and sidewall and, after 200 cycles, the silicon nitride film is deposited on the top and sidewall with a conformality of greater than 85% (sidewall/top).

20 . A processing method comprising:
placing a substrate having a substrate surface into a processing chamber comprising a plurality of sections, each section separated from adjacent sections by a gas curtain; exposing at least a portion of the substrate surface to a first process condition in a first section of the processing chamber, the first process condition comprising an argon plasma to form a treated substrate surface; laterally moving the substrate surface through a gas curtain to a second section of the processing chamber; exposing the treated substrate surface to a silicon halide precursor to form a silicon halide film on the substrate surface in the second section of the processing chamber, the halogen atoms of the silicon halide precursor comprises substantially only bromine, iodine or a combination of bromine and iodine, the silicon halide precursor having substantially no Si—H bonds and substantially no Si—F or Si—Cl bonds; laterally moving the substrate surface with the silicon halide film through a gas curtain to a third section of the processing chamber; exposing the silicon halide film to a nitrogen-containing reactant to form a silicon nitride film on the substrate surface in the third section of the processing chamber, the nitrogen-containing reactant comprising one or more of nitrogen, nitrogen plasma, ammonia or hydrazine; and laterally moving the substrate surface from the third section through a gas curtain; and repeating exposure to the first section, second section and third section including lateral movement of the substrate surface to form a silicon nitride film of a predetermined thickness, wherein the processing chamber is maintained at a temperature less than about 500° C.

Assignees

• Applied Materials Inc

Inventors

• Saly Mark

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H01L21/0228 Primary

  Electricity · mapped topic