Method of manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2016196980-A1
Application number	US-201614988078-A
Country	US
Kind code	A1
Filing date	Jan 5, 2016
Priority date	Jan 6, 2015
Publication date	Jul 7, 2016
Grant date	—

Abstract

The present invention provides a technology capable of removing impurities remaining in a thin film when the film is formed and modifying a characteristic of the thin film according to a change in impurity concentration. There is provided a method of manufacturing a semiconductor device including: (a) repetitively supplying a plurality of gases including elements constituting a film in temporally separated pulses (in non-simultaneous manner) to form the film on the substrate; and (b) exciting a modifying gas including a reducing gas and at least one of a nitriding gas and an oxidizing gas by plasma and supplying the modifying gas excited by plasma to modify the film.

First claim

What is claimed is:

1 . A method of manufacturing a semiconductor device, comprising:
(a) repetitively supplying a plurality of gases comprising elements constituting a film in temporally separated pulses to form the film on the substrate; and (b) exciting a modifying gas comprising a reducing gas and at least one of a nitriding gas and an oxidizing gas by plasma and supplying the modifying gas excited by plasma to modify the film.

2 . The method of claim 1 , wherein an impurity in the film is removed by supplying the modifying gas excited by plasma to the film in the step (b).

3 . The method of claim 1 , wherein the reducing gas comprises a hydrogen-containing gas, and the hydrogen-containing gas comprises one selected from a group consisting of H 2 gas, D 2 gas, NH 3 gas and H 2 O gas.

4 . The method of claim 1 , wherein the nitriding gas comprises one selected from a group consisting of N 2 gas, NH 3 gas and N 2 O gas.

5 . The method of claim 1 , wherein the oxidizing gas comprises one selected from a group consisting of O 2 gas, O 3 gas, H 2 O gas and N 2 O gas.

6 . The method of claim 1 , wherein the film comprises one selected from a group consisting of a nitride film, an oxide film, a carbide film and combinations thereof, each of the nitride film, the oxide film, the carbide film and combinations thereof comprises one selected from a group consisting of titanium, tantalum, tungsten, cobalt, yttrium, ruthenium, aluminum, hafnium, zirconium, molybdenum and silicon.

7 . The method of claim 1 , wherein the film comprises a conductive film.

8 . The method of claim 2 , wherein the impurity comprises at least one selected from a group consisting of carbon, chlorine and fluorine.

9 . The method of claim 7 , wherein a resistivity and a work function of the conductive film are tuned by varying a self bias in the step (b).

10 . The method of claim 1 , wherein the plurality of gases comprises an inorganic source gas and at least one selected from a group consisting of the nitriding gas and the oxidizing gas.

11 . The method of claim 10 , wherein the inorganic source gas comprises a halide.

12 . The method of claim 1 , wherein the plurality of gases comprises an organic source gas and at least one selected from a group consisting of the nitriding gas and the oxidizing gas.

13 . The method of claim 1 , wherein the plurality of gases comprises an inorganic source gas, an organic source gas and at least one selected from a group consisting of the nitriding gas and the oxidizing gas.

14 . The method of claim 13 , wherein each of the inorganic source gas and the organic source gas comprises at least one of the elements constituting the film.

15 . The method of claim 1 , wherein a thickness of the film is determined by a penetration depth of the modifying gas excited by plasma into the film.

16 . The method of claim 15 , wherein the thickness of the film ranges from 0.01 nm to 5 nm.

Assignees

• Hitachi Int Electric Inc

Inventors

• Degai Motomu
• Nakayama Masanori
• Harada Kazuhiro
• Kitamura Masahito

Classifications

• H10P14/432

  using selective deposition · CPC title

• H10P14/412 Primary

  Deposition of metallic or metal-silicide materials · CPC title

• H10W20/0523

  by irradiating with ultraviolet or particle radiation · CPC title

• C23C16/4554

  Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence) · CPC title

• C23C16/505

  using radio frequency discharges · CPC title