Method of selective gas phase film deposition on a substrate

Patent metadata

Field	Value
Publication number	US-2016172189-A1
Application number	US-201514970372-A
Country	US
Kind code	A1
Filing date	Dec 15, 2015
Priority date	Dec 15, 2014
Publication date	Jun 16, 2016
Grant date	—

Abstract

According to one embodiment of the invention, a method is provided for selective surface deposition. In one example, the method includes providing a substrate containing a first material having a first surface and a second material having a second surface, forming a modified first surface and a modified second surface by exposing the first surface and the second surface to hydrogen gas excited by a plasma source, and selectively depositing a film on the modified second surface but not on the modified first surface.

First claim

What is claimed is:

1 . A method of selective film deposition on a substrate, the method comprising:
providing a substrate containing a first material having a first surface and a second material having a second surface; forming a modified first surface and a modified second surface by exposing the substrate to hydrogen gas excited by a plasma source; and selectively depositing, by gas phase deposition, a film on the modified second surface but not on the modified first surface.

2 . The method of claim 1 , further comprising:
repeating the forming and selectively depositing at least once.

3 . The method of claim 1 , wherein the first material is different from the second material, and the first and second surfaces are horizontal surfaces that lie at least substantially in the same plane.

4 . The method of claim 1 , wherein the first material is different from the second material, the first surface includes a horizontal surface of the first material and a vertical surface of a recessed feature formed in the first material, and the second surface includes a surface of the second material in the recessed feature.

5 . The method of claim 1 , wherein the forming includes isotropically exposing the substrate to hydrogen radicals.

6 . The method of claim 1 , wherein the first surface is hydroxyl terminated and the modified first surface is hydrogen terminated.

7 . The method of claim 1 , wherein the first material includes a semiconductor or a dielectric material.

8 . The method of claim 1 , wherein the second material includes a metal, a metal-containing material, or a semiconductor.

9 . The method of claim 1 , wherein the film includes a metal oxide film.

10 . A method of selective film deposition on a substrate, the method comprising:
providing a substrate containing a first material having a first horizontal surface and a first vertical surface in a recessed feature formed in the first material, and a second material having a second surface in the recessed feature; forming a modified first horizontal surface, a modified first vertical surface, and a modified second surface by exposing the substrate to hydrogen gas excited by a plasma source; and selectively depositing, by gas phase deposition, a film on the modified first vertical surface but not on the modified first horizontal surface.

11 . The method of claim 10 , wherein the film is not deposited on the second modified surface.

12 . The method of claim 10 , wherein the film is further deposited on the second modified surface.

13 . The method of claim 10 , further comprising
repeating the forming and selectively depositing at least once.

14 . The method of claim 10 , wherein the forming includes anisotropically exposing the substrate to hydrogen ions.

15 . The method of claim 10 , wherein the first horizontal surface, the first vertical surface, and the modified first vertical surface are hydroxyl terminated, and the wherein the modified first horizontal surface is hydrogen terminated.

16 . The method of claim 10 , wherein the first material is the same as the second material.

17 . The method of claim 10 , wherein the first material is different from the second material.

18 . The method of claim 10 , wherein the first and second materials include a semiconductor or a dielectric material.

19 . The method of claim 10 , wherein the film includes a metal oxide film.

20 . A method of selective film deposition on a substrate, the method comprising:
providing a substrate containing a first material having a first surface and a second material having a second surface, wherein the first material is different from the second material, and both the first surface and the second surface are at least substantially in the same plane; forming a modified first surface and a modified second surface by exposing the substrate to hydrogen gas excited by a plasma source, wherein the first surface is hydroxyl terminated and the modified first surface is hydrogen terminated; and selectively depositing, by atomic layer deposition (ALD), a metal oxide film on the modified second surface but not on the modified first surface.

Assignees

• Tokyo Electron Ltd

Inventors

• Tapily Kandabara N

Classifications

• H10P95/94

  Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6502

  of treatments performed before formation of the materials · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title