Sub-saturated atomic layer deposition and conformal film deposition

Patent metadata

Field	Value
Publication number	US-9355839-B2
Application number	US-201314061587-A
Country	US
Kind code	B2
Filing date	Oct 23, 2013
Priority date	Oct 23, 2012
Publication date	May 31, 2016
Grant date	May 31, 2016

Abstract

Methods and apparatus for depositing continuous thin films using plasma-activated sub-saturated atomic layer deposition are provided herein. According to various embodiments, pin-hole free continuous films may be deposited at thicknesses thinner than achievable with conventional methods. The methods and apparatus also provide high degree of thickness control, with films a per-cycle thickness tunable to as low as 0.1 Å in some embodiments. Further, the methods and apparatus may be used to provide films having improved properties, such as lower wet etch rate, in some embodiments.

First claim

What is claimed is:

1. A method for depositing a conformal film on a substrate surface, the method comprising:
providing a substrate comprising topographical features in a reaction chamber;
introducing a first reactant in vapor phase into the reaction chamber under conditions allowing the first reactant to adsorb onto the substrate surface;
introducing a dose of a second reactant in vapor phase into the reaction chamber for a dose time wherein the dose of the second reactant is a sub-saturated dose; and
periodically exposing the substrate surface to plasma when the dose of the second reactant has ceased to drive a surface reaction between the first and second reactants on the substrate surface to form the film such that it conforms to the topographical features.

2. The method of claim 1 , wherein the plasma is ignited while at least one of the reactants is in a gas phase while being exposed to the substrate.

3. The method of claim 1 , wherein deposition temperature is less than about 200° C.

4. The method of claim 1 , wherein deposition temperature is less than about 150° C.

5. The method of claim 1 , wherein the plasma exposure has a conversion efficiency of at least 50 J/mL, wherein the conversion efficiency is the amount of plasma energy applied per unit of second reactant flux in the sub-saturated dose.

6. The method of claim 1 , wherein the plasma exposure has a conversion efficiency of at least 150 J/mL, wherein the conversion efficiency is the amount of plasma energy applied per unit of second reactant flux in the sub-saturated dose.

7. The method of claim 1 , wherein the first reactant is an oxidant.

8. The method of claim 1 , further comprising:
prior to introducing the dose of the second reactant, determining a saturated dose of the second reactant via a dose saturation curve.

9. The method of claim 1 , wherein the sub-saturated dose is less than about 4 microliters of the second reactant.

10. The method of claim 1 , wherein the sub-saturated dose is less than about 60% of a saturated dose.

11. The method of claim 1 , prior to exposing the substrate to plasma, further comprising purging out residual second reactant in vapor phase for a purge time,
wherein the ratio of the purge time to sub-saturated dose time is less than about 2.

12. The method of claim 1 , wherein the second reactant is a precursor molecule with a surrounding atom molecular weight of at least 50 Da.

13. The method of claim 1 , wherein the second reactant is a precursor molecule with a surrounding atom molecular weight of at least 140 Da.

14. The method of claim 1 , wherein the film is deposited is less than about 0.5 Å thick.

15. The method of claim 1 , wherein the film is deposited is less than about 0.1 Å thick.

16. The method of claim 1 , wherein the film has a within wafer non-uniformity of less than 1.0%.

17. A method for depositing a conformal film on a substrate surface, the method comprising:
providing a substrate comprising topographical features in a station of a single or multi-station reaction chamber;
introducing a first reactant in vapor phase into the chamber under conditions allowing the first reactant to adsorb onto the substrate surface;
introducing a dose of a second reactant in vapor phase into the reaction chamber wherein the dose of the second reactant is a sub-saturated dose; and
periodically exposing the substrate surface to plasma when the dose of the second reactant has ceased to drive a surface reaction between the first and second reactants on the substrate surface to form the film such that it conforms to the topographical features,
wherein the plasma is generated at an energy of at least about 200 Joules per chamber.

18. The method of claim 17 , wherein deposition temperature is less than about 150° C.

19. The method of claim 17 , further comprising:
prior to introducing the dose of the second reactant, determining the dose of the second reactant via a dose saturation curve.

20. The method of claim 17 , wherein the plasma exposure has a conversion efficiency of at least 50 J/mL.

21. The method of claim 17 , wherein the film is deposited is less than about 0.1 Å thick.

22. An apparatus for depositing conformal films on a substrate comprising topographical features, the apparatus comprising:
a reaction chamber;
an inlet port for delivering gas phase reactants to the reaction chamber;
a plasma generator for providing plasma to the reaction chamber; and
a controller comprising instructions for:
flowing a first reactant in vapor phase into the reaction chamber under conditions allowing the first reactant to adsorb onto the substrate surface;
flowing a dose of a second reactant in vapor phase into the reaction chamber for a dose time wherein the dose of the second reactant is a sub-saturated dose; and
periodically supplying a plasma in the reaction chamber at a conversion efficiency of at least 50 J/mL when the dose of the second reactant has ceased to drive a surface reaction between the first and second reactants on the substrate surface to form the film such that it conforms to the topographical features,
wherein the conversion efficiency is the amount of plasma energy applied per unit of second reactant flux in the sub-saturated dose.

Assignees

• Lam Res Corp

Inventors

• Swaminathan Shankar
• Kang Hu
• Lavoie Adrien

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title