Nitride diffusion barrier structure for spintronic applications
US-12550623-B2 · Feb 10, 2026 · US
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Thomas Luc patents
Thomas Luc is listed as an inventor on 58 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Thomas Luc |
| Total patents | 58 |
| First publication | Jan 13, 2015 |
| Latest publication | Feb 10, 2026 |
Notable patents
Publications ranked by popularity score, then publication date.
Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)
US-12501836-B2 · Dec 16, 2025 · US
Multilayer Structure for Reducing Film Roughness in Magnetic Devices
US-2025338775-A1 · Oct 30, 2025 · US
Multilayer structure for reducing film roughness in magnetic devices
US-12356865-B2 · Jul 8, 2025 · US
Perpendicularly magnetized ferromagnetic layers having an oxide interface allowing for improved control of oxidation
US-12249450-B2 · Mar 11, 2025 · US
Perpendicularly Magnetized Ferromagnetic Layers Having an Oxide Interface Allowing for Improved Control of Oxidation
US-2024379270-A1 · Nov 14, 2024 · US
Dual magnetic tunnel junction (DMTJ) stack design
US-12082509-B2 · Sep 3, 2024 · US
Integration scheme for three terminal spin-orbit-torque (SOT) switching devices
US-11895928-B2 · Feb 6, 2024 · US
Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
US-11683994-B2 · Jun 20, 2023 · US
Method for measuring saturation magnetization of magnetic films and multilayer stacks
US-11609296-B2 · Mar 21, 2023 · US
Recent patents
Latest publications not already listed above.
Dual Magnetic Tunnel Junction Devices For Magnetic Random Access Memory (Mram)
US-2023060687-A1 · Mar 2, 2023 · US
Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anistropy
US-11569441-B2 · Jan 31, 2023 · US
Dual magnetic tunnel junction devices for magnetic random access memory (MRAM)
US-11495738-B2 · Nov 8, 2022 · US
Ferromagnetic resonance (FMR) electrical testing apparatus for spintronic devices
US-11397226-B2 · Jul 26, 2022 · US
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and Improved Coercivity Field (Hc)/Switching Current Ratio
US-2022149272-A1 · May 12, 2022 · US
Magnetic element with perpendicular magnetic anisotropy (PMA) and improved coercivity field (Hc)/switching current ratio
US-11264566-B2 · Mar 1, 2022 · US
Minimal thickness, low switching voltage magnetic free layers using an oxidation control layer and magnetic moment tuning layer for spintronic applications
US-11264560-B2 · Mar 1, 2022 · US
Multi-probe ferromagnetic resonance (FMR) apparatus for wafer level characterization of magnetic films
US-11237240-B2 · Feb 1, 2022 · US
Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers
US-11092661-B2 · Aug 17, 2021 · US
Nitride Diffusion Barrier Structure for Spintronic Applications
US-2021175414-A1 · Jun 10, 2021 · US
Novel Integration Scheme for Three Terminal Spin-Orbit-Torque (SOT) Switching Devices
US-2021104663-A1 · Apr 8, 2021 · US
Nitride diffusion barrier structure for spintronic applications
US-10950782-B2 · Mar 16, 2021 · US
Method for Measuring Saturation Magnetization of Magnetic Films and Multilayer Stacks
US-2021025958-A1 · Jan 28, 2021 · US
Dual Magnetic Tunnel Junction (DMTJ) Stack Design
US-2021020830-A1 · Jan 21, 2021 · US
Minimal Thickness, Low Switching Voltage Magnetic Free Layers Using an Oxidation Control Layer and Magnetic Moment Tuning Layer for Spintronic Applications
US-2020403143-A1 · Dec 24, 2020 · US
Magnetic Element with Perpendicular Magnetic Anisotropy (PMA) and Improved Coercivity Field (Hc)/Switching Current Ratio
US-2020403149-A1 · Dec 24, 2020 · US
Ferromagnetic Resonance (FMR) Electrical Testing Apparatus for Spintronic Devices
US-2020393525-A1 · Dec 17, 2020 · US
Multi-Probe Ferromagnetic Resonance (FMR) Apparatus for Wafer Level Characterization of Magnetic Films
US-2020386840-A1 · Dec 10, 2020 · US
Dual magnetic tunnel junction (DMTJ) stack design
US-10797225-B2 · Oct 6, 2020 · US
Method for measuring saturation magnetization of magnetic films and multilayer stacks
US-10788561-B2 · Sep 29, 2020 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Taiwan Semiconductor Mfg Co Ltd | 35 |
| Headway Tech Inc | 21 |
| Headway Technologies Inc | 1 |
| IBM | 1 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10N50/10 | 48 |
| H10N50/85 | 40 |
| H10N50/01 | 40 |
| G11C11/161 | 35 |
| H01L43/10 | 32 |