Dual magnetic tunnel junction (DMTJ) stack design

Patent metadata

Field	Value
Publication number	US-10797225-B2
Application number	US-201816133964-A
Country	US
Kind code	B2
Filing date	Sep 18, 2018
Priority date	Sep 18, 2018
Publication date	Oct 6, 2020
Grant date	Oct 6, 2020

Abstract

A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free layer/TB2/PL2/capping layer configuration wherein a first tunnel barrier (TB1) has a substantially lower resistance×area (RA1) product than RA2 for an overlying second tunnel barrier (TB2) to provide an acceptable net magnetoresistive ratio (DRR). Moreover, magnetizations in first and second pinned layers, PL1 and PL2, respectively, are aligned antiparallel to enable a lower critical switching current than when in a parallel alignment. An oxide capping layer having a RACAP is formed on PL2 to provide higher PL2 stability. The condition RA1<RA2 and RACAP<RA2 is achieved when TB1 and the oxide capping layer have one or both of a smaller thickness and a lower oxidation state than TB2, are comprised of conductive (metal) channels in a metal oxide or metal oxynitride matrix, or are comprised of a doped metal oxide or doped metal oxynitride layer.

First claim

We claim:

1. A dual magnetic tunnel junction (DMTJ), comprising:
a first pinned ferromagnetic layer (PL 1 ) on a substrate;
a first tunnel barrier layer (TB 1 ) formed on PL 1 , and having a first resistance×area product (RA 1 );
a free layer (FL) that contacts a top surface of TB 1 and having a
magnetization aligned orthogonal to the substrate;
a second tunnel barrier layer (TB 2 ) adjoining a top surface of the FL, and with a second resistance×area product (RA 2 ) that is substantially greater than RA 1 ;
a second pinned ferromagnetic layer (PL 2 ) formed on TB 2 wherein PL 2 has a magnetization aligned orthogonal to the substrate, and antiparallel to a PL 1 magnetization; and
an oxide capping layer contacting a top surface of PL 2 , and with a resistance×area product (RA CAP ) that is substantially less than RA 2 .

2. The DMTJ of claim 1 wherein TB 1 and TB 2 are comprised of a metal oxide or metal oxynitride wherein the metal is selected from one or more of Mg, Ti, Al, Zn, Zr, Hf, and Ta, or are a lamination of two or more of the aforementioned metal oxides or metal oxynitrides.

3. The DMTJ of claim 1 wherein each of TB 1 and the oxide capping layer has one or both of a smaller thickness and a lower oxidation state than TB 2 .

4. The DMTJ of claim 1 wherein one or both of TB 1 and the oxide capping layer are comprised of a metal oxide or metal oxynitride matrix in which a plurality of conductive channels are formed.

5. The DMTJ of claim 4 wherein the conductive channels are comprised of a metal or alloy selected from one or more of Pt, Au, Ag, Mg, Al, Ca, Sr, Ba, Sc, Y, La, Co, Fe, B, Mn, Mo, Ru, Rh, Ir, Ni, Pd, Zn, Cu, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, Os, and W.

6. The DMTJ of claim 1 further comprised of a hard mask formed on the oxide capping layer.

7. The DMTJ of claim 1 wherein the oxide capping layer is a doped metal oxide layer wherein the metal is one or more of Mg, Al, Ti, Ta, Fe, Co, B, and Ru, and the dopant (D) is one of N, S, Se, P, C, Te, As, Sb, Bi, Si, Pt, Au, Ir, W, or Mo with a content from 100 ppm to 20 atomic % that creates conducting states in the band gap in the doped oxide capping layer.

8. The DMTJ of claim 1 wherein the substrate is comprised of a bottom electrode in a memory device that is a magnetic random access memory (MRAM) or a spin torque (STT)-MRAM.

9. The DMTJ of claim 1 further comprised of a metal oxide Hk enhancing layer that adjoins a bottom surface of PL 1 , and having a resistance×area product (RA Hk ) substantially less than RA 2 .

10. The DMTJ of claim 1 wherein PL 2 is comprised of a lower layer that is one or more of Co, Fe, and Ni or an alloy thereof with B having a body centered cubic crystal structure to form a lattice match with TB 2 .

11. The DMTJ of claim 1 wherein the oxide capping layer is comprised of a metal oxide or a metal oxynitride wherein the metal is one or more of Mg, Al, Ta, Ti, Fe, Co, B, and Ru.

12. A dual magnetic tunnel junction (DMTJ), comprising:
a first pinned ferromagnetic layer (PL 1 ) on a substrate;
a first tunnel barrier layer (TB 1 ) formed on PL 1 , and having a first resistance×area product (RA 1 );
a free layer (FL) that contacts a top surface of TB 1 and having a magnetization aligned orthogonal to the substrate;
a second tunnel barrier layer (TB 2 ) adjoining a top surface of the FL, and with a second resistance×area product (RA 2 ) that is substantially greater than RA 1 ;
a second pinned ferromagnetic layer (PL 2 ) formed on TB 2 wherein PL 2 comprises:
a first sub-layer contacting a top surface of TB 2 , and with a body centered cubic (bcc) crystal structure wherein a magnetization is aligned orthogonal to the substrate, and antiparallel to a PL 1 magnetization; and
an uppermost second sub-layer that has a face center cubic (fcc) (111) crystal texture to enhance perpendicular magnetic anisotropy (PMA) within PL 2 , and that is ferromagnetically coupled to the first sub-layer; and

a hard mask layer on a top surface of PL 2 .

13. The DMTJ of claim 12 wherein TB 1 has one or both of a smaller thickness and a lower oxidation state than TB 2 .

14. The DMTJ of claim 12 wherein TB 1 has a plurality of conductive channels extending from a PL 1 top surface to a FL bottom surface.

15. The DMTJ of claim 12 wherein the second sub-layer has inherent PMA and is a laminated stack that is one of (Co/Ni) n , (CoFe/Ni) n , (Co/NiFe) n , (Co/NiCo) n , (Co/Pt) n , or (Co/Pd) n where n is a lamination number.

16. The DMTJ of claim 15 further comprised of a metal layer that is one of Ta, W, or Mo that is formed between the first and second sub-layers in order to decouple the crystallographic textures of the first and second sub-layers.

17. The DMTJ of claim 12 wherein the first sub-layer is one or more of Co, Fe, and Ni or an alloy thereof that forms a lattice match with TB 2 .

18. A dual magnetic tunnel junction (DMTJ), comprising:
a first pinned ferromagnetic layer disposed over a substrate;
a first tunnel barrier layer disposed on the first pinned ferromagnetic layer, the first tunnel barrier layer including a first plurality of conductive channels;
a free layer disposed on the first tunnel barrier layer;
a second tunnel barrier layer disposed on the free layer;
a second pinned ferromagnetic layer disposed on the second tunnel barrier layer; and
an oxide capping layer disposed on the second pinned ferromagnetic layer, wherein the oxide capping layer includes a second plurality of conductive channels.

19. The DMTJ of claim 18 , wherein the first tunnel barrier layer has a first resistance×area product (RA 1 ),
wherein the second tunnel barrier layer has a second resistance×area product (RA 2 ), and
wherein RA 2 is greater than RA 1 .

20. The DMTJ of claim 19 , wherein the oxide capping layer has a resistance×area product (RA CAP ) that is less than RA 2 .

21. The DMTJ of claim 18 , further comprising a hard mask layer disposed on the oxide capping layer.

22. The DMTJ of claim 21 , wherein at least one conductive channel from the second plurality of conductive channels extends from the second pinned ferromagnetic layer to the hard mask layer.

23. The DMTJ of claim 18 , wherein the first tunnel barrier layer is formed of a material selected from the group consisting of a metal oxide and a metal oxynitride matrix.

24. The DMTJ of claim 18 , wherein a width of the first plurality of conductive channels ranges from a single atom to a plurality of atoms.

25. The DMTJ of claim 18 , wherein at least one conductive channel from the first plurality of conductive channels extends from the first pinned ferromagnetic layer to the free layer.

26. The DMTJ of claim 18 , wherein the first pinned ferromagnetic layer includes:
a first antiparallel layer;
a second antiparallel layer disposed over the first antiparallel layer; and
an antiferromagnetic coupling layer between the first antiparallel layer and the second antiparallel layer.

27. The DMTJ of claim 26 , wherein a first magnetization of the second antiparallel layer is antiparallel to a second magnetization of the second pinned ferromagnetic layer.

28. The DMTJ of claim 18 , wherein the first tunnel barrier layer has a first thickness in a direction perpendicular to the substrate and the second tunnel barrier layer has a second thickness in the direction perpendicular to the substrate, wh

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Sundar Vignesh
• Wang Yu-Jen
• Thomas Luc
• Jan Guenole
• Patel Sahil
• Tong Ru-Ying

Classifications

• H01F41/34

  in patterns, e.g. by lithography · CPC title

• H01F41/302

  for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices (spin-exchange-coupled multilayers H01F10/32) · CPC title

• H01F10/329

  Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/3259 Primary

  Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer · CPC title