Dual magnetic tunnel junction (DMTJ) stack design

Patent metadata

Field	Value
Publication number	US-12082509-B2
Application number	US-202017063392-A
Country	US
Kind code	B2
Filing date	Oct 5, 2020
Priority date	Sep 18, 2018
Publication date	Sep 3, 2024
Grant date	Sep 3, 2024

Abstract

A dual magnetic tunnel junction (DMTJ) is disclosed with a PL 1 /TB 1 /free layer/TB 2 /PL 2 /capping layer configuration wherein a first tunnel barrier (TB 1 ) has a substantially lower resistance x area (RA 1 ) product than RA 2 for an overlying second tunnel barrier (TB 2 ) to provide an acceptable net magnetoresistive ratio (DRR). Moreover, magnetizations in first and second pinned layers, PL 1 and PL 2 , respectively, are aligned antiparallel to enable a lower critical switching current than when in a parallel alignment. An oxide capping layer having a RA CAP is formed on PL 2 to provide higher PL 2 stability. The condition RA 1 <RA 2 and RA CAP <RA 2 is achieved when TB 1 and the oxide capping layer have one or both of a smaller thickness and a lower oxidation state than TB 2 , are comprised of conductive (metal) channels in a metal oxide or metal oxynitride matrix, or are comprised of a doped metal oxide or doped metal oxynitride layer.

First claim

What is claimed is:

1. A method comprising:
forming a first pinned ferromagnetic layer on a substrate;
forming a first tunnel barrier layer on the first pinned ferromagnetic layer, the first tunnel barrier layer having a first resistance x area product (RA 1 );
forming a free layer that contacts a top surface of the first tunnel barrier layer;
forming a second tunnel barrier layer that adjoins a top surface of the free layer, the second tunnel barrier layer having a second resistance x area product (RA 2 ) that is greater than RA 1 ;
forming a second pinned ferromagnetic layer on the second tunnel barrier layer;
forming a metal oxide or metal oxynitride capping layer that contacts a top surface of the second pinned ferromagnetic layer, and having a resistance x area product (RA CAP ) that is less than RA 2 , wherein the metal oxide or metal oxynitride capping layer comprises a plurality of conductive channels in a metal oxide or metal oxynitride matrix in which the conductive channels extend from a top surface of the free layer to a bottom surface of an overlying hard mask; and
performing an initialization process wherein a magnetization of the first pinned ferromagnetic layer is aligned antiparallel to a magnetization of the second pinned ferromagnetic layer, and a magnetization of the free layer, the magnetization of the first pinned ferromagnetic layer and the magnetization of the second pinned ferromagnetic layer are aligned orthogonal to the substrate.

2. The method of claim 1 , wherein the metal oxide or metal oxynitride capping layer is formed by sputter depositing a metal oxide target or a metal oxynitride target, respectively, with a radio frequency (RF) physical vapor deposition (PVD) process, and wherein the metal therein is one or more of Mg, Al, Ti, Ta, Fe, Co, B, and Ru.

3. The method of claim 1 , wherein one or both of the first tunnel barrier layer and the metal oxide or metal oxynitride capping layer has one or both of a smaller thickness and a lower oxidation state than the second tunnel barrier layer.

4. The method of claim 1 , wherein the conductive channels are comprised of a metal or alloy selected from one or more of Pt, Au, Ag, Mg, Al, Ca, Sr, Ba, Sc, Y, La, Co, Fe, B, Mn, Mo, Ru, Rh, Ir, Ni, Pd, Zn, Cu, Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, Os, and W.

5. The method of claim 1 , wherein the first tunnel barrier layer, the second tunnel barrier layer and the metal oxide or metal oxynitride capping layer are formed with a RF PVD process.

6. The method of claim 1 , wherein the plurality of conductive channels in the metal oxide or metal oxynitride matrix is formed by a process that includes:
forming a metal oxide layer or a metal oxynitride layer on the second pinned ferromagnetic layer;
exposing the metal oxide layer or metal oxynitride layer to a reactive environment comprised of a second metal species; and
performing one or more anneal steps such that conductive channels are generated in the metal oxide or metal oxynitride matrix, the conductive channels including the second metal species.

7. The method of claim 1 , further comprising performing one or more anneal steps after forming the first tunnel barrier layer on the first pinned ferromagnetic layer.

8. The method of claim 1 , wherein the substrate is a metal oxide Hk enhancing layer.

9. The method of claim 1 , wherein the plurality of conductive channels in the metal oxide matrix or metal oxynitride matrix is formed by a process comprised of co-depositing a metal species, an oxygen (O) or oxygen and nitrogen species, and a second metal species.

10. The method of claim 9 , further comprising performing one or more anneal steps after the co-deposition is completed to enable a conglomeration of the second metal species into conductive channels.

11. The method of claim 1 , wherein the second pinned ferromagnetic layer includes one or more of Co, Fe, Ni or an alloy thereof with B,
wherein the forming of the second pinned ferromagnetic layer on the second tunnel barrier layer includes depositing an amorphous second pinned ferromagnetic layer on the second tunnel barrier layer, and
wherein the method further comprises performing an anneal process to convert the amorphous second pinned ferromagnetic layer into the second pinned ferromagnetic layer having a body center cubic structure.

12. The method of claim 11 , wherein the forming of the metal oxide or metal oxynitride capping layer includes oxidation or oxynitridation of a portion of the second pinned ferromagnetic layer.

13. A method comprising:
forming a first tunnel barrier layer over a substrate, the first tunnel barrier layer having a first resistance x area product (RA 1 );
forming a free layer on the first tunnel barrier layer;
forming a second tunnel barrier layer on the free layer, the second tunnel barrier layer having a second resistance x area product (RA 2 ) that is different than RA 1 ;
forming a first pinned layer on the second tunnel barrier layer; and
forming a capping layer on the first pinned layer, the capping layer having a resistance x area product (RA CAP ) that is different than RA 2 , wherein the forming of the capping layer on the first pinned layer includes performing an oxidation or oxynitridation process on a portion of the first pinned layer to thereby form a metal oxide capping layer or a metal oxynitride capping layer.

14. The method of claim 13 , further comprising:
forming a second pinned layer, wherein the second pinned layer interfaces with the first tunnel barrier layer;
applying a first magnetic field in a first direction to set a magnetization of the first pinned ferromagnetic layer, a magnetization of the second pinned ferromagnetic layer and a magnetization of the free layer in the first direction; and
applying a second magnetic field in a second direction such that the magnetization of the first pinned layer is aligned antiparallel to the magnetization of the second pinned ferromagnetic layer after the applying of the second magnetic field, the second direction being different than the first direction.

15. The method of claim 13 , further comprising forming a plurality of conductive channels within the metal oxide capping layer or the metal oxynitride capping layer.

16. The method of claim 13 , wherein the metal oxide capping layer or the metal oxynitride capping layer includes a dopant selected from the group consisting of N, S, Se, P, C, Te, As, Sb, Bi, Si, Pt, Au, Ir, W, or Mo.

17. The method of claim 16 , further comprising exposing the metal oxide capping layer or the metal oxynitride capping layer to a reactive environment comprised of the dopant.

18. The method of claim 16 , further comprising implanting the dopant into the metal oxide capping layer or the metal oxynitride capping layer.

19. A method comprising:
forming a first pinned layer disposed over a substrate;
forming a first tunnel barrier layer on the first pinned ferromagnetic layer;
forming a free layer on the first tunnel barrier layer;
forming a second tunnel barrier layer on the free layer;
forming a second pinned layer on the second tunnel barrier layer; and
forming an oxide capping layer on the second pinned ferromagnetic layer, wherein the forming of the oxide capping layer includes forming a first plurality of conductive channels within the oxide capping layer.

20. The method of claim 19 , wherein the first tunnel barrier layer has a first resistance x area product (RA 1 ) and the second tunnel barrier layer has a second resistance x area product (RA 2 ) t

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Sundar Vignesh
• Wang Yu-Jen
• Thomas Luc
• Jan Guenole
• Patel Sahil
• Tong Ru-Ying

Classifications

• H01F41/34

  in patterns, e.g. by lithography · CPC title

• H01F41/302

  for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices (spin-exchange-coupled multilayers H01F10/32) · CPC title

• H01F10/329

  Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/3259 Primary

  Spin-exchange-coupled multilayers comprising at least a nanooxide layer [NOL], e.g. with a NOL spacer · CPC title