Method for measuring saturation magnetization of magnetic films and multilayer stacks

Patent metadata

Field	Value
Publication number	US-11609296-B2
Application number	US-202017035153-A
Country	US
Kind code	B2
Filing date	Sep 28, 2020
Priority date	Oct 16, 2018
Publication date	Mar 21, 2023
Grant date	Mar 21, 2023

Abstract

A ferromagnetic resonance (FMR) measurement method is disclosed wherein a magnetic film or stack of layers is patterned into elongated structures having a length along a long axis. A magnetic field (H) is applied in two different orientations with respect to the long axis (in-plane parallel and perpendicular to the long axis) or one orientation may be perpendicular-to-plane. In another embodiment, H is applied parallel to a first set of elongated structures with a long axis in the x-axis direction, and perpendicular to a second set of elongated structures with a long axis in the y-axis direction. From the difference in measured resonance frequency (Δfr) (for a fixed magnetic field and sweeping through a range of frequencies) or the difference in measured resonance field (ΔHr) (for a fixed microwave frequency and sweeping through a range of magnetic field amplitudes), magnetic saturation Ms is determined using formulas of demagnetizing factors.

First claim

What is claimed is:

1. A method comprising:
forming a pattern in a magnetic material, the pattern including a first elongated structure and a second elongated structure;
applying a first magnetic field to the first elongated structure and the second elongated structure while applying one or more first microwave frequencies to one or more first locations on each of the first and second elongated structures to induce a ferromagnetic resonance condition therein at the one or more first locations;
determining a resonance field difference from a first resonance field measured at the one or more first locations on the first elongated structure and a second resonance field measured at the one or more first locations on the second elongated structure; and
determining saturation magnetization from the resonance field difference.

2. The method of claim 1 , wherein the first elongated structure is elongated along a first direction and the second elongated structure is elongated along a second direction that is orthogonal to the first direction.

3. The method of claim 1 , wherein the applying of the first magnetic field to the first elongated structure and the second elongated structure includes applying the first magnetic field in-plane to the first elongated structure and the second elongated structure.

4. The method of claim 1 , further comprising applying a second magnetic field to the first elongated structure and the second elongated structure while applying one or more second microwave frequencies to one or more second locations on each of the first and second elongated structures to induce a ferromagnetic resonance condition therein.

5. The method of claim 4 , wherein the determining of the resonance field difference from the first resonance field measured at the one or more first locations on the first elongated structure and the second resonance field measured at the one or more first locations on the second elongated structure further includes determining the resonance field difference from a third resonance field measured at the one or more second locations on the first elongated structure and a fourth resonance field measured at the one or more second locations on the second elongated structure.

6. The method of claim 5 , wherein the first elongated structure is elongated along a first direction and the second elongated structure is elongated along the first direction such that the first elongated structure is parallel to the second elongated structure.

7. The method of claim 6 , wherein the applying of the second magnetic field to the first elongated structure and the second elongated structure includes applying the second magnetic perpendicular-to-plane of the first elongated structure and the second elongated structure.

8. A method comprising:
forming a pattern in a magnetic material, the pattern including a first elongated structure and a second elongated structure;
applying a first magnetic field to the first elongated structure and the second elongated structure while applying a first microwave frequency to one or more first locations on each of the first and second elongated structures to induce a ferromagnetic resonance condition therein at the one or more first locations;
determining a resonance frequency difference from a first resonance frequency at the one or more first locations on the first elongated structure and a second resonance frequency at the one or more first locations on the second elongated structure; and
determining saturation magnetization from the resonance frequency difference.

9. The method of claim 8 , wherein the first elongated structure has a first length measured in a first direction and a first width measure in a second direction that is orthogonal to the first direction,
wherein the second elongated structure has a second length measured in the second direction and a second width measure in the first direction, and
wherein the first length is greater than the first width and the second length is greater than the second width.

10. The method of claim 8 , wherein the applying of the first magnetic field to the first elongated structure and the second elongated structure includes applying the first magnetic field in-plane to the first elongated structure and the second elongated structure.

11. The method of claim 8 , further comprising applying a second magnetic field to the first elongated structure and the second elongated structure while applying a second microwave frequency to one or more second locations on each of the first and second elongated structures to induce a ferromagnetic resonance condition therein.

12. The method of claim 11 , wherein the determining of the resonance frequency difference from the first resonance frequency at the one or more first locations on the first elongated structure and the second resonance frequency at the one or more first locations on the second elongated structure further includes determining the resonance frequency difference from a third resonance frequency measured at the one or more second locations on the first elongated structure and a fourth resonance frequency measured at the one or more second locations on the second elongated structure.

13. The method of claim 12 , wherein the first elongated structure has a first length measured in a first direction and a first width measure in a second direction that is orthogonal to the first direction,
wherein the second elongated structure has a second length measured in the first direction and a second width measure in the second direction, and
wherein the first length is greater than the first width and the second length is greater than the second width.

14. The method of claim 13 , wherein the applying of the second magnetic field to the first elongated structure and the second elongated structure includes applying the second magnetic perpendicular-to-plane of the first elongated structure and the second elongated structure.

15. A method comprising:
applying one or more magnetic fields and one or more microwave frequencies to first and second elongated structures disposed on a wafer;
determining either a resonance field difference or a resonance frequency difference, wherein the resonance field difference is determined from a first resonance field measured at one or more first locations on the first elongated structure and a second resonance field measured at one or more first locations on the second elongated structure, wherein the resonance frequency difference is determined from a first resonance frequency at the one or more first locations on the first elongated structure and a second resonance frequency at the one or more first locations on the second elongated structure; and
determining saturation magnetization from either the resonance field difference or the resonance frequency difference.

16. The method of claim 15 , wherein the applied magnetic field (H) is up to 10 Tesla, and
wherein the applied microwave frequency is in a range of 0.01 GHz to 100 GHz.

17. The method of claim 15 , wherein the elongated structures have a substantially rectangular, or substantially elliptical shape.

18. The method of claim 15 , wherein the first elongated structure is wider than the second elongated structure.

19. The method of claim 1 , wherein the applying of the first magnetic field to the first elongated structure and the second elongated structure while applying the one or more first microwave frequencies to the one or more first locations on each of the first and second elongated structures includes app

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Guisan Santiago Serrano
• Thomas Luc
• Jan Guenole
• Le Son

Classifications

• G01R1/06772

  High frequency probes · CPC title

• G01R33/1215 Primary

  Measuring magnetisation; Particular magnetometers therefor (G01R33/14 takes precedence; electrodynamic magnetometers G01R33/028) · CPC title

• G01N24/10 Primary

  by using electron paramagnetic resonance (G01N24/12 takes precedence) · CPC title

• G01R33/30

  Sample handling arrangements, e.g. sample cells, spinning mechanisms · CPC title

• H10N50/10

  Magnetoresistive devices · CPC title