Integration scheme for three terminal spin-orbit-torque (SOT) switching devices

Patent metadata

Field	Value
Publication number	US-11895928-B2
Application number	US-201916592210-A
Country	US
Kind code	B2
Filing date	Oct 3, 2019
Priority date	Oct 3, 2019
Publication date	Feb 6, 2024
Grant date	Feb 6, 2024

Abstract

A three terminal spin-orbit-torque (SOT) device is disclosed wherein a free layer (FL) with a switchable magnetization is formed on a Spin Hall Effect (SHE) layer comprising a Spin Hall Angle (SHA) material. The SHE layer has a first side contacting a first bottom electrode (BE) and an opposite side contacting a second BE where the first and second BE are separated by a dielectric spacer. A first current is applied between the two BE, and the SHE layer generates SOT on the FL thereby switching the FL magnetization to an opposite perpendicular-to-plane direction. The SHE layer is a positive or negative SHA material, and may be a topological insulator such as Bi2Sb3. A top electrode is formed on an uppermost hard mask in each SOT device. A single etch through the FL and SHE layer ensures a reliable first current pathway that is separate from a read current pathway.

First claim

We claim:

1. A three terminal spin-orbit-torque (SOT) switching device, comprising:
(a) first and second bottom electrodes (BE) that adjoin opposing sidewalls of a dielectric spacer wherein the opposing dielectric spacer sidewalls are separated by a first width (w) along a first axis, and wherein each of the first and second BE have a top surface that is coplanar with a dielectric spacer top surface;
(b) a stack of layers wherein each layer has substantially a second width (w 3 ) along the first axis wherein w 3 >w, and is the distance between two opposing planar sidewalls aligned parallel to a second axis, and each layer has substantially a first length (d) along the second axis that is orthogonal to the first axis and wherein d is the distance between two opposing planar sidewalls aligned parallel to the first axis, comprising:
(1) a non-magnetic Spin Hall Effect (SHE) layer that adjoins the dielectric spacer top surface and comprised of a Spin Hall Angle (SHA) material, and wherein a bottom end of a first side of the SHE layer contacts the top surface of the first BE and a bottom end of a second side of the SHE layer contacts the top surface of the second BE, and the SHE layer is configured to generate a spin-orbit-torque on an overlying ferromagnetic (FM) layer when a first current is applied across the SHE layer in a first axis direction from the first BE to the second BE, or in a direction opposite to the first axis direction;
(2) the overlying FM layer having a magnetization in a perpendicular-to-plane direction that flips to an opposite direction when the spin-orbit-torque is generated by the SHE layer; and
(3) an uppermost hard mask (HM) layer with a top surface that is formed above the FM layer; and
(c) a top electrode (TE) formed on the HM layer top surface, and configured so that a read operation that determines the magnetization direction in the FM layer is performed when a second current is applied from the TE to one of the first BE and second BE, or from one of the first and second BE to the TE.

2. The three terminal SOT switching device of claim 1 wherein the SHE layer has a thickness less than 12 nm.

3. The three terminal SOT switching device of claim 1 wherein the SHE layer is made of a positive SHA material and said three terminal SOT switching device is configured to apply the first current across the SHE layer in the first axis (in-plane) direction when switching the FM layer magnetization from an upward direction toward the TE to a downward direction, and to apply the first current across the SHE layer in a direction opposite to the first axis direction when switching the FM layer magnetization from the downward direction to the upward direction.

4. The three terminal SOT switching device of claim 1 wherein the SHE layer is made of a negative SHA material and said three terminal SOT switching device is configured to apply the first current across the SHE layer in the first axis (in-plane) direction when switching the FM layer magnetization from a downward direction to an upward direction toward the TE, and to apply the first current across the SHE layer in a direction opposite to the first axis direction when switching the FM layer magnetization from the upward direction to the downward direction.

5. The three terminal SOT switching device of claim 1 wherein the SHE layer is one of Ta, Hf, Pt, Ir, and W, or is a topological insulator (TI) that is Bi 2 Sb 3 , Bi 2 Se 3 , Bi 2 Te 3 , or Sb 2 Te 3 .

6. The three terminal SOT switching device of claim 1 wherein the FM layer is one or more of Co, Fe, Ni, or alloys thereof with B, or laminates thereof including (Co/Ni) n , (CoFe/Ni) n , or laminates with Pt or Pd that are (Fe/Pt) n , (Co/Pt) n , (Fe/Pd) n , and (Co/Pd) n where n is a lamination number.

7. The three terminal SOT switching device of claim 1 wherein the FM layer is a free layer (FL), and the stack of layers is further comprised of a tunnel barrier on the FL, and a reference layer having a fixed magnetization in the perpendicular-to-plane direction that is formed on the tunnel barrier layer.

8. The three terminal SOT switching device of claim 1 wherein the second width is greater than the first width, and each of the first and second sides of the SHE layer is coplanar with a side of the FM layer and HM layer.

9. The three terminal SOT switching device of claim 1 wherein the second width is greater than the first width.

10. The three terminal SOT switching device of claim 9 wherein each of the first and second SHE layer sides forms an angle from 20 degrees to 70 degrees with a top surface of the first BE and second BE, respectively.

11. The three terminal SOT switching device of claim 1 wherein the bottom ends of the first and second sides of the SHE layer are each a distance of at least 5 nm to 10 nm from one of the opposing dielectric spacer sidewalls in the first axis direction.

12. The three terminal SOT switching device of claim 1 wherein the first width is from 30 nm to 300 nm.

Assignees

• Headway Tech Inc

Inventors

• Haq Jesmin
• Zhong Tom
• Thomas Luc
• Teng Zhongjian
• Shen Dongna

Classifications

• H10N50/85

  Materials of the active region · CPC title

• H10N52/01 Primary

  Manufacture or treatment · CPC title

• G11C11/161 Primary

  details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title

• H10B61/20

  comprising components having three or more electrodes, e.g. transistors · CPC title

• H10N52/00

  Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00) · CPC title