Apparatus and method of modulating threshold voltage for fin field effect transistor (FinFET) and nanosheet FET
US-11211493-B2 · Dec 28, 2021 · US
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Rodder Mark patents
Rodder Mark is listed as an inventor on 27 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Rodder Mark |
| Total patents | 27 |
| First publication | May 5, 2016 |
| Latest publication | Dec 28, 2021 |
Notable patents
Publications ranked by popularity score, then publication date.
Method of forming isolation dielectrics for stacked field effect transistors (FETs)
US-11158738-B2 · Oct 26, 2021 · US
Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch
US-10910313-B2 · Feb 2, 2021 · US
Apparatus and method of modulating threshold voltage for fin field effect transistor (finfet) and nanosheet fet
US-2020403093-A1 · Dec 24, 2020 · US
Method of forming isolation dielectrics for stacked field effect transistors (fets)
US-2020403097-A1 · Dec 24, 2020 · US
Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch
US-10861950-B2 · Dec 8, 2020 · US
Low-k dielectric pore sealant and metal-diffusion barrier formed by doping and method for forming the same
US-10510665-B2 · Dec 17, 2019 · US
Sub 59 MV/decade SI CMOS compatible tunnel FET as footer transistor for power gating
US-10424581-B2 · Sep 24, 2019 · US
Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitch
US-2019148298-A1 · May 16, 2019 · US
Cell architecture with contact on active gate compatible with a small cell area having small contacted poly pitch
US-2019148502-A1 · May 16, 2019 · US
Recent patents
Latest publications not already listed above.
FinFet having dual vertical spacer and method of manufacturing the same
US-10181527-B2 · Jan 15, 2019 · US
Horizontal nanosheet FETs and methods of manufacturing the same
US-9960232-B2 · May 1, 2018 · US
Method to make self-aligned vertical field effect transistor
US-9899529-B2 · Feb 20, 2018 · US
Methods of forming nanosheets on lattice mismatched substrates
US-9870940-B2 · Jan 16, 2018 · US
Horizontal nanosheet fets and methods of manufacturing the same
US-2017323941-A1 · Nov 9, 2017 · US
Sub 59 mv / decade si cmos compatible tunnel fet as footer transistor for power gating
US-2017301672-A1 · Oct 19, 2017 · US
Vertical field effect transistor with biaxial stressor layer
US-9773904-B2 · Sep 26, 2017 · US
Metal oxysilicate diffusion barriers for damascene metallization with low RC delays and methods for forming the same
US-9728502-B2 · Aug 8, 2017 · US
S/D connection to individual channel layers in a nanosheet FET
US-9653287-B2 · May 16, 2017 · US
Method to make self-aligned vertical field effect transistor
US-2017133513-A1 · May 11, 2017 · US
Finfet having dual vertical spacer and method of manufacturing the same
US-2017110568-A1 · Apr 20, 2017 · US
Vertical Field Effect Transistor with Biaxial Stressor Layer
US-2017077304-A1 · Mar 16, 2017 · US
Semiconductor device having buried power rail
US-9570395-B1 · Feb 14, 2017 · US
Methods of Forming Nanosheets on Lattice Mismatched Substrates
US-2017040209-A1 · Feb 9, 2017 · US
Low-k dielectric pore sealant and metal-diffusion barrier formed by doping and method for forming the same
US-2016148870-A1 · May 26, 2016 · US
Metal oxysilicate diffusion barriers for damascene metallization with low rc delays and methods for forming the same
US-2016133513-A1 · May 12, 2016 · US
S/d connection to individual channel layers in a nanosheet fet
US-2016126310-A1 · May 5, 2016 · US
Major assignees
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Samsung Electronics Co Ltd | 27 |
Top CPC classifications
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D84/038 | 12 |
| H10D30/6757 | 10 |
| H10D62/118 | 9 |
| H10D30/031 | 8 |
| H10W20/42 | 6 |